# US 8,785,284 B1 · FinFETs and fin isolation structures

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- Number: US 8,785,284 B1
- Document ID: US8785284B1
- Status: Granted
- Kind: B1
- Application number: 13/771,240
- Filed: 2013-02-20
- Granted: 2014-07-22
- Earliest claimed: 2013-02-20
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Marc A. Bergendahl; David V. Horak; Charles W. Koburger, III; Shom Ponoth; Chih-Chao Yang
- Web page: https://patentgrep.com/patent/US8785284B1

## CPC

- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 86/215: {comprising FinFETs}
- H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
- H10W 10/0121: {in regions recessed from the surface, e.g. in trenches or grooves}
- H10W 10/0143: {comprising concurrently refilling multiple trenches having different shapes or dimensions}
- H10W 10/13: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D 86/011: {comprising FinFETs}
- H10P 14/61: using masks
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

FinFETs and fin isolation structures and methods of manufacturing the same are disclosed. The method includes patterning a bulk substrate to form a plurality of fin structures of a first dimension and of a second dimension. The method includes forming oxide material in spaces between the plurality of fin structures of the first dimension and the second dimension. The method includes forming a capping material over sidewalls of selected ones of the fin structures of the first dimension and the second dimension. The method includes recessing the oxide material to expose the bulk substrate on sidewalls below the capping material. The method includes performing an oxidation process to form silicon on insulation fin structures and bulk fin structures with gating. The method further includes forming a gate structure over the SOI fin structures and the bulk fin structures.

## Claims

### Claim 1

A method comprising:
patterning a bulk substrate to form a plurality of fin structures of a first dimension and a plurality of fin structures of a second dimension;
forming oxide material in spaces formed between the plurality of fin structures of the first dimension and the plurality of fin structures of the second dimension;
forming a capping material over sidewalls of selected ones of the plurality of fin structures of the first dimension and the plurality of fin structures of the second dimension;
recessing the oxide material to expose the bulk substrate on sidewalls below the capping material;
performing an oxidation process to form silicon on insulation (SOI) fin structures from the selected ones of the plurality of fin structures of the first dimension, and bulk fin structures from the selected ones of the plurality of fin structures of the second dimension; and
forming a gate structure over the SOI fin structures and the bulk fin structures.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming of the capping material is a deposition process which covers the oxide material, which remains between portions of adjacent fins of the plurality of fins of the first dimension and is removed between the selected ones of the plurality of fin structures of the first dimension.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first dimension is smaller than the second dimension, in width.

### Claim 4 (depends on 3)

The method of claim 3, wherein:
the first dimension is of a width that allows the oxidation process to completely oxidize the exposed portion of the bulk substrate on sidewalls below the capping material; and
the second dimension is of a width that allows partial oxidation of the exposed portion of the bulk substrate on sidewalls below the capping material.

### Claim 5 (depends on 1)

The method of claim 1, wherein the capping material is nitride.

### Claim 6 (depends on 1)

The method of claim 1, wherein the oxidation process forms isolation structures from the plurality of fin structures of the first dimension located between the SOI fin structures and the bulk fin structures.

### Claim 7 (depends on 6)

The method of claim 6, wherein the isolation structures are oxide fins formed from the bulk substrate on any of the plurality of fin structures of the first dimension where the capping material has been removed from sidewalls thereof.

### Claim 8 (depends on 1)

The method of claim 1, wherein the second dimension is of such a width that oxidation forms only on sidewalls of the bulk fin structures.

### Claim 9 (depends on 8)

The method of claim 8, wherein the oxidation is formed along an full length of the sidewalls.

### Claim 10 (depends on 8)

The method of claim 8, wherein the oxidation is formed on an partial section of the sidewalls, below the capping material.

### Claim 11 (depends on 1)

The method of claim 1, wherein the forming of the gate structure comprises a deposition and patterning of a metal material.

### Claim 12 (depends on 1)

The method of claim 1, wherein the forming of the gate structure comprising a deposition and patterning of a poly material.

### Claim 13 (depends on 1)

The method of claim 1, further comprising protecting portions of the capping material over one or more of the plurality of fin structures of the first dimension to prevent the oxidation process from forming SOI fin structures.

### Claim 14

A method, comprising:
patterning a bulk substrate and a cap layer to form a plurality of narrow fins and a plurality of wide fins;
depositing oxide material within spaces between the plurality of narrow fins and the plurality of wide fins;
depositing a capping material over sidewalls the plurality of narrow fins and the plurality of wide fins;
removing the capping material on the sidewalls of selected ones of the plurality of narrow fins and the plurality of wide fins;
recessing the oxide material to below the capping material to expose the bulk substrate;
performing an oxidation process on exposed portions of the bulk substrate which forms:
one or more substrate on insulator fin structures;
one or more bulk substrate fin structures; and
one or more insulator structures.

### Claim 15 (depends on 14)

The method of claim 14, wherein:
the one or more substrate on insulator fin structures is formed from selected narrow fins structures which included capping material on the sidewalls;
the one or more bulk substrate fin structures is formed from the plurality of wide fin structures; and
the one or more insulator structures is formed from the selected ones of the plurality of narrow fins with removed capping material.

### Claim 16 (depends on 15)

The method of claim 15, further comprising forming gate material spanning the one or more substrate on insulator fin structures, the one or more insulator structures and the one or more bulk substrate fin structures.

### Claim 17 (depends on 16)

The method of claim 16, further comprising protecting one or more of the plurality of narrow fin structures during the oxidation to form narrow bulk fin structures.

### Claim 18 (depends on 17)

The method of claim 17, wherein the protecting is formed by depositing the capping material over the one or more of the plurality of narrow fin structures.