# US 8,785,269 B2 · Method for manufacturing a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,269 B2 - Document ID: US8785269B2 - Status: Granted - Kind: B2 - Application number: 13/681,844 - Filed: 2012-11-20 - Published: 2013-07-04 - Granted: 2014-07-22 - Earliest claimed: 2011-12-28 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Hiroaki Sano; Takehito Okabe - Web page: https://patentgrep.com/patent/US8785269B2 ## CPC - H10W 70/095: {of vias therein} - H10F 39/014: {of CMOS image sensors} - H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} - H10H 20/01: Manufacture or treatment - H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A method for manufacturing a semiconductor device, the method comprising, forming a first opening in a first insulating layer provided above a semiconductor substrate, forming a first contact plug by depositing a conductive member in the first opening and removing a part of the conductive member so as to expose the first insulating layer, forming a second insulating layer over the first insulating layer after forming the first contact plug, forming a second opening in the first and second insulating layers without exposing the first contact plug, forming a second contact plug by depositing the conductive member in the second opening and removing a part of the conductive member so as to expose the second insulating layer, and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, the method comprising: forming a first opening in a first insulating layer provided above a semiconductor substrate; forming a first contact plug by depositing a first conductive member in the first opening and removing a part of the first conductive member so as to expose the first insulating layer; forming a second insulating layer over the first insulating layer after forming the first contact plug; forming a second opening in the first insulating layer and the second insulating layer without exposing the first contact plug; forming a second contact plug by depositing a second conductive member in the second opening and removing a part of the second conductive member so as to expose the second insulating layer; and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug, wherein the semiconductor substrate is provided with a first connection region to be connected to the first contact plug, a second connection region to be connected to the second contact plug, and a third insulating layer arranged so as to cover the first connection region and the second connection region, and wherein the forming of the first opening includes arranging a first photoresist pattern over the first insulating layer, forming the first opening in the first insulating layer so as to expose the third insulating layer using the first photoresist pattern, removing the first photoresist pattern after exposing the third insulating layer, and etching the third insulating layer so as to expose the first connection region through the first opening. ### Claim 2 (depends on 1) The method according to claim 1, wherein the first insulating layer is an insulating layer whose main component is silicon oxide, and the third insulating layer is an insulating layer whose main component is silicon nitride. ### Claim 3 (depends on 1) The method according to claim 1, wherein the first contact plug is connected to a semiconductor compound region containing a compound of a metal and a semiconducting member, and the second contact plug is connected to a semiconductor region including the semiconductor member and not including the compound. ### Claim 4 (depends on 1) The method according to claim 1, wherein the first contact plug is connected to an NMOS transistor, and the second contact plug is connected to a PMOS transistor. ### Claim 5 (depends on 1) The method according to claim 1, wherein the first contact plug is connected to a gate terminal of a MOS transistor, and the second contact plug is connected to a drain terminal or a source terminal of the MOS transistor. ### Claim 6 (depends on 1) The method according to claim 1, wherein the semiconductor device is a solid-state image sensor having a photoelectric conversion portion. ### Claim 7 (depends on 1) The method according to claim 1, wherein the forming of the second opening includes arranging a second photoresist pattern over the second insulating layer, forming the second opening in the first insulating layer and the second insulating layer so as to expose the third insulating layer using the second photoresist pattern, removing the second photoresist pattern after exposing the third insulating layer, and etching the third insulating layer so as to expose the second connection region through the second opening. ### Claim 8 A method for manufacturing a semiconductor device, the method comprising: forming a first opening in a first insulating layer provided above a semiconductor substrate; forming a first contact plug by depositing a first conductive member in the first opening and removing a part of the first conductive member so as to expose the first insulating layer; forming a second insulating layer over the first insulating layer after forming the first contact plug; forming a second opening in the first insulating layer and the second insulating layer without exposing the first contact plug; forming a second contact plug by depositing a second conductive member in the second opening and removing a part of the second conductive member so as to expose the second insulating layer; and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug, wherein the semiconductor substrate is provided with a first connection region to be connected to the first contact plug, a second connection region to be connected to the second contact plug, and a third insulating layer arranged so as to cover the first connection region and the second connection region, and wherein the forming of the second opening includes arranging a second photoresist pattern over the second insulating layer, forming the second opening in the first insulating layer and the second insulating layer so as to expose the third insulating layer using the second photoresist pattern, removing the second photoresist pattern after exposing the third insulating layer, and etching the third insulating layer so as to expose the second connection region through the second opening. ### Claim 9 (depends on 8) The method according to claim 8, wherein the first insulating layer is an insulating layer whose main component is silicon oxide, and the third insulating layer is an insulating layer whose main component is silicon nitride. ### Claim 10 (depends on 8) The method according to claim 8, wherein the semiconductor device is a solid-state image sensor having a photoelectric conversion portion. ### Claim 11 A method for manufacturing a semiconductor device, the method comprising: forming a first opening in a first insulating layer provided above a semiconductor substrate; forming a first contact plug by depositing a first conductive member in the first opening and removing a part of the first conductive member so as to expose the first insulating layer; forming a second insulating layer over the first insulating layer after forming the first contact plug; etching the first insulating layer and the second insulating layer so as to form a second opening in the first insulating layer and the second insulating layer without exposing the first contact plug; forming a second contact plug by depositing a second conductive member in the second opening and removing a part of the second conductive member so as to expose the second insulating layer; and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug. ### Claim 12 (depends on 11) The method according to claim 11, wherein the semiconductor device is a solid-state image sensor having a photoelectric conversion portion. ### Claim 13 A method for manufacturing a semiconductor device, the method comprising: forming a first opening in a first insulating layer provided above a semiconductor substrate; forming a first contact plug by depositing a first conductive member in the first opening and removing a part of the first conductive member so as to expose the first insulating layer; forming a second insulating layer over the first insulating layer after forming the first contact plug; forming a second opening in the first insulating layer and the second insulating layer without exposing the first contact plug; forming a second contact plug by depositing a second conductive member over the second insulating layer and in the second opening and removing a part of the second conductive member so as to expose the second insulating layer; and removing the second insulating layer so as to expose the first contact plug after forming the second contact plug. ### Claim 14 (depends on 13) The method according to claim 13, wherein the semiconductor device is a solid-state image sensor having a photoelectric conversion portion.