# US 8,785,265 B2 · Semiconductor device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,265 B2 - Document ID: US8785265B2 - Status: Granted - Kind: B2 - Application number: 14/089,986 - Filed: 2013-11-26 - Published: 2014-03-27 - Granted: 2014-07-22 - Earliest claimed: 2010-11-30 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US8785265B2 ## CPC - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering - H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers} - H10P 14/3226: {Oxides} - H10P 14/3234: {being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224)} - H10P 14/3426: {Oxides} - H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)} - H10P 14/36: {characterised by treatments done before the formation of the materials} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to the oxide semiconductor, an oxide semiconductor film having a wurtzite crystal structure that is a hexagonal crystal structure is formed. In the oxide semiconductor film, the crystallinity of a region containing nitrogen is higher than that of a region hardly containing nitrogen or a region to which nitrogen is not intentionally added. The oxide semiconductor film having high crystallinity and having a wurtzite crystal structure is used as a channel formation region of a transistor. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising the steps of: forming an insulating film containing nitrogen over a substrate including an insulating surface; introducing the substrate over which the insulating film containing nitrogen is formed, into a vacuum chamber; forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.; forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.; and performing heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 650° C. after the deposition is performed under the second deposition condition, wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a percentage of a flow rate of a nitrogen gas with respect to a total flow rate of a sputtering gas under the first deposition condition is different from a percentage of a flow rate of a nitrogen gas with respect to a total flow rate of a sputtering gas under the second deposition condition. ### Claim 3 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a percentage of a flow rate of a nitrogen gas with respect to a total flow rate of a sputtering gas which is introduced into the vacuum chamber is greater than or equal to 90% and less than or equal to 100% under the first deposition condition. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a nitrogen gas is introduced into the vacuum chamber while the nitrogen gas is heated under the first deposition condition. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a sputtering gas which includes an oxygen gas or a rare gas besides the nitrogen gas is introduced under the second deposition condition. ### Claim 6 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising the step of performing nitrogen plasma treatment on a surface of the insulating film containing nitrogen after the insulating film containing nitrogen is formed. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film containing nitrogen is formed by nitrogen plasma treatment on a surface of an insulating film. ### Claim 8 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the second oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure. ### Claim 9 A method for manufacturing a semiconductor device, comprising the steps of: forming a gate electrode layer over a substrate including an insulating surface; forming an insulating film containing nitrogen over the gate electrode layer; introducing the substrate over which the gate electrode layer and the insulating film containing nitrogen are formed, into a vacuum chamber; forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.; forming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that the substrate temperature is higher than or equal to 150° C. and lower than or equal to 450° C.; and performing heat treatment at a temperature higher than or equal to 150° C. and lower than or equal to 650° C. after the deposition is performed under the second deposition condition, wherein the first oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure. ### Claim 10 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein a percentage of a flow rate of a nitrogen gas with respect to a total flow rate of a sputtering gas under the first deposition condition is greater than a percentage of a flow rate of a nitrogen gas with respect to a total flow rate of a sputtering gas under the second deposition condition. ### Claim 11 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein a percentage of a flow rate of a nitrogen gas with respect to a total flow rate of a sputtering gas which is introduced into the vacuum chamber is greater than or equal to 90% and less than or equal to 100% under the first deposition condition. ### Claim 12 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein a nitrogen gas is introduced into the vacuum chamber while the nitrogen gas is heated under the first deposition condition. ### Claim 13 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein a sputtering gas which includes an oxygen gas or a rare gas besides the nitrogen gas is introduced under the second deposition condition. ### Claim 14 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, further comprising the step of performing nitrogen plasma treatment on a surface of the insulating film containing nitrogen after the insulating film containing nitrogen is formed. ### Claim 15 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein the insulating film containing nitrogen is formed by nitrogen plasma treatment on a surface of the insulating film. ### Claim 16 (depends on 9) The method for manufacturing a semiconductor device according to claim 9, wherein the second oxide semiconductor film to which the heat treatment is performed has a wurtzite crystal structure.