# US 8,785,264 B2 · Organic TFT array substrate and manufacture method thereof

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- Number: US 8,785,264 B2
- Document ID: US8785264B2
- Status: Granted
- Kind: B2
- Application number: 13/479,048
- Filed: 2012-05-23
- Published: 2012-11-29
- Granted: 2014-07-22
- Earliest claimed: 2011-05-24
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: Xuehui Zhang
- Inventors: Xuehui Zhang
- Web page: https://patentgrep.com/patent/US8785264B2

## CPC

- H10K 19/10: comprising field-effect transistors
- H10K 10/40: Organic transistors
- H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate}
- H10K 10/82: Electrodes
- H10K 71/233: {by photolithographic etching}
- H10K 10/88: Passivation; Containers; Encapsulations
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

According to an embodiment of the disclosed technology, a manufacture method of an organic thin film transistor array substrate is provided. The method comprises: forming a first pixel electrode, a source electrode, a drain electrode and a data line in a first patterning process; forming an organic semiconductor island and a gate insulating island in a second patterning process; forming a data pad region in a third patterning process; and forming a second pixel electrode, a gate electrode and a gate line in a fourth patterning process.

## Claims

### Claim 1

A manufacture method of an organic thin film transistor array substrate comprising:
sequentially forming a first transparent conductive film and a source-drain metal film on a base substrate and then performing a first patterning process to form a first pixel electrode, a source electrode, a drain electrode and a data line;
sequentially forming an organic semiconductor film and a gate insulating film and then performing a second patterning process to form an organic semiconductor island and a gate insulating island, wherein both the organic semiconductor island and the gate insulating island are provided above the source electrode and the drain electrode;
forming a passivation layer and then performing a third patterning process to form a data pad region; and
sequentially forming a second transparent conductive film and a gate metal film and then performing a fourth patterning process to form a second pixel electrode, a gate electrode and a gate line.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the first patterning process comprises:
applying a photoresist layer on the source-drain metal film, performing exposing and developing processes on the photoresist layer by using a mask to obtain a photoresist-completely-removed region, a photoresist-partially-remained region and a photoresist-completely-remained region;
performing a first etching process to etch the first transparent conductive film and the source-drain metal film in the photoresist-completely-removed region;
performing an ashing process on the photoresist layer so that the photoresist in the photoresist-partially-remained region is removed and the thickness of the photoresist in the photoresist-completely-remained region is decreased;
performing a second etching process to etch the source-drain metal film in the photoresist-partially-remained region and obtain the first pixel electrode; and
removing the photoresist in the photoresist-completely-remained region to obtain the source electrode, the drain electrode and the data line.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the mask used in the first patterning process is a half-tone mask or a gray-tone mask.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the second patterning process comprises:
forming the organic semiconductor film and the gate insulating film and performing a pre-baking process and an after-baking process;
applying a photoresist layer, and performing exposing and developing processes on the photoresist layer by using a mask to obtain a photoresist-remained region and a photoresist-removed region; and
performing an etching process to etch the gate insulating film and the organic semiconductor film in the photoresist-removed region.

### Claim 5 (depends on 4)

The method according to claim 4, wherein
the pre-baking process is performed for 20 minutes at 100° C.;
and the after-baking process is performed for 20 minutes at 130° C.

### Claim 6 (depends on 4)

The method according to claim 4, wherein the organic semiconductor film is made of vanadium oxide phthalocyanine, pentacene, or polythiophene.

### Claim 7 (depends on 4)

The method according to claim 4, wherein the gate insulating film is made of poly (4-vinylphenol), polyimide, polyvinyl alcohol, or benzocyclobutene.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the third patterning process comprises:
performing the third patterning process to remove the passivation layer in the data pad region and expose the data line in this region, so that the data pad region is obtained.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the fourth patterning process comprises:
after sequentially forming the second transparent conductive film and the gate metal film, applying a photoresist layer on the gate metal film, and then performing exposing and developing processes on the photoresist layer by using a mask to obtain a photoresist-completely-removed region, a photoresist-partially-remained region and a photoresist-completely-remained region;
performing a first etching process to etch the second transparent conductive film and the gate metal film in the photoresist-completely-removed region;
performing an ashing process on the photoresist layer so that the photoresist in the photoresist-partially-remained region is removed and the thickness of the photoresist in the photoresist-completely-remained region is decreased;
performing a second etching process to obtain the second pixel electrode; and
removing the photoresist in the photoresist-completely-remained region to obtain the gate electrode and the gate line.

### Claim 10 (depends on 9)

The method according to claim 9, wherein the mask used in the fourth patterning process is a half-tone mask or a gray-tone mask.