# US 8,785,259 B2 · Organic transistor, manufacturing method of semiconductor device and organic transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,259 B2 - Document ID: US8785259B2 - Status: Granted - Kind: B2 - Application number: 13/722,028 - Filed: 2012-12-20 - Published: 2013-05-02 - Granted: 2014-07-22 - Earliest claimed: 2005-04-25 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Ryota Imahayashi; Shinobu Furukawa; Atsuo Isobe; Yasuyuki Arai; Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US8785259B2 ## CPC - H10K 10/462: {Insulated gate field-effect transistors [IGFETs]} - H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate} - H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate} - H10K 71/10: Deposition of organic active material - H10K 10/472: {the gate dielectric comprising only inorganic materials} - H10K 10/488: {the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction} - H10K 85/623: {containing five rings, e.g. pentacene} - H10P 14/6314: {of a metallic layer} - H10P 14/6316: {Formation by nitridation, e.g. nitridation of the substrate} - H10P 14/6319: {Formation by plasma treatments, e.g. plasma oxidation of the substrate} - H10P 14/6939: {characterised by the metal} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated. ## Claims ### Claim 1 A method for manufacturing an organic transistor, the method comprising the steps of: forming a first conductive layer over a substrate; performing plasma treatment on a surface of the first conductive layer to form a gate insulating film, wherein the plasma treatment is performed with density of electron of 1011 cm−3 or more and an electron temperature in a range of 0.2 eV to 2.0 eV; forming a second conductive layer over and in contact with the gate insulating film; forming a first composite layer over and in contact with the second conductive layer and the gate insulating film; forming a second composite layer over and in contact with the first composite layer and the gate insulating film; and forming an organic semiconductor layer over and in contact with the second composite layer and the gate insulating film, wherein the first composite layer comprises a first organic compound and a metal oxide which are mixed with each other, wherein the second composite layer comprises a second organic compound and a metal selected from an alkali metal and an alkaline-earth metal, and wherein the first organic compound and the second organic compound are different from each other. ### Claim 2 (depends on 1) The method according to claim 1, wherein the first conductive layer comprises one of tantalum, niobium, aluminum, molybdenum, titanium, or copper. ### Claim 3 (depends on 1) The method according to claim 1, wherein the gate insulating film comprises an oxide of a metal which is selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper. ### Claim 4 (depends on 1) The method according to claim 1, wherein the gate insulating film comprises a nitride of a metal which is selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper. ### Claim 5 (depends on 1) The method according to claim 1, wherein the first organic compound comprises an aromatic amine skeleton. ### Claim 6 (depends on 1) The method according to claim 1, wherein the first organic compound is an aromatic hydrocarbon. ### Claim 7 (depends on 1) The method according to claim 1, wherein the metal oxide is one or a plurality of oxides of molybdenum, titanium, vanadium, chromium, zirconium, niobium, hafnium, tantalum, tungsten, and rhenium. ### Claim 8 A method for manufacturing an organic transistor, the method comprising the steps of: forming a first conductive layer over a substrate; performing plasma treatment on a surface of the first conductive layer to form a gate insulating film; forming a second conductive layer over and in contact with the gate insulating film; forming a first composite layer over and in contact with the second conductive layer and the gate insulating film; forming a second composite layer over and in contact with the first composite layer and the gate insulating film; and forming an organic semiconductor layer over and in contact with the second composite layer and the gate insulating film, wherein the first composite layer comprises a first organic compound and a metal oxide which are mixed with each other, wherein the second composite layer comprises a second organic compound and a metal selected from an alkali metal and an alkaline-earth metal, and wherein the first organic compound and the second organic compound are different from each other. ### Claim 9 (depends on 8) The method according to claim 8, wherein the first conductive layer comprises one of tantalum, niobium, aluminum, molybdenum, titanium, or copper. ### Claim 10 (depends on 8) The method according to claim 8, wherein the gate insulating film comprises an oxide of a metal which is selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper. ### Claim 11 (depends on 8) The method according to claim 8, wherein the gate insulating film comprises a nitride of a metal which is selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper. ### Claim 12 (depends on 8) The method according to claim 8, wherein the first organic compound comprises an aromatic amine skeleton. ### Claim 13 (depends on 8) The method according to claim 8, wherein the first organic compound is an aromatic hydrocarbon. ### Claim 14 (depends on 8) The method according to claim 8, wherein the metal oxide is one or a plurality of oxides of molybdenum, titanium, vanadium, chromium, zirconium, niobium, hafnium, tantalum, tungsten, and rhenium. ### Claim 15 A method for manufacturing an organic transistor, the method comprising the steps of: forming a first conductive layer over a substrate; performing plasma treatment on a surface of the first conductive layer to form a gate insulating film; forming a second conductive layer over and in contact with the gate insulating film; forming a first composite layer over and in contact with the second conductive layer and the gate insulating film; forming a second composite layer over and in contact with the first composite layer and the gate insulating film; and forming an organic semiconductor layer over and in contact with the second composite layer and the gate insulating film, wherein the first composite layer comprises a first organic compound and a metal oxide which are mixed with each other, wherein the organic semiconductor layer comprises the first organic compound, wherein the second composite layer comprises a second organic compound and a metal selected from an alkali metal and an alkaline-earth metal, and wherein the first organic compound and the second organic compound are different from each other. ### Claim 16 (depends on 15) The method according to claim 15, wherein the gate insulating film comprises an oxide of a metal which is selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper. ### Claim 17 (depends on 15) The method according to claim 15, wherein the gate insulating film comprises a nitride of a metal which is selected from tantalum, niobium, aluminum, molybdenum, titanium, and copper. ### Claim 18 (depends on 15) The method according to claim 15, wherein the metal oxide is one or a plurality of oxides of molybdenum, titanium, vanadium, chromium, zirconium, niobium, hafnium, tantalum, tungsten, and rhenium. ### Claim 19 (depends on 1) The method according to claim 1, wherein the second organic compound has an electron transport property. ### Claim 20 (depends on 8) The method according to claim 8, wherein the second organic compound has an electron transport property. ### Claim 21 (depends on 15) The method according to claim 15, wherein the second organic compound has an electron transport property.