# US 8,785,255 B2 · Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device

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- Number: US 8,785,255 B2
- Document ID: US8785255B2
- Status: Granted
- Kind: B2
- Application number: 14/178,357
- Filed: 2014-02-12
- Published: 2014-06-12
- Granted: 2014-07-22
- Earliest claimed: 2010-11-23
- Assignees: Ibiden Co., Ltd.
- Applicants: Ibiden Co., Ltd
- Inventors: Toshiki Furutani; Daiki Komatsu; Masatoshi Kunieda; Naomi Fujita; Nobuya Takahashi
- Web page: https://patentgrep.com/patent/US8785255B2

## CPC

- H05K 1/113: {Via provided in pad; Pad over filled via}
- H05K 1/0298: {Multilayer circuits}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/685: comprising multiple insulating layers
- H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 72/072: {of bump connectors}
- H10W 72/07207: {Temporary substrates, e.g. removable substrates}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A substrate for mounting a semiconductor includes a first insulation layer having first and second surfaces on the opposite sides and having a penetrating hole penetrating through the first insulation layer, an electrode formed in the penetrating hole in the first insulation layer and having a protruding portion protruding from the second surface of the first insulation layer, a first conductive pattern formed on the first surface of the first insulation layer and connected to the electrode, a second insulation layer formed on the first surface of the first insulation layer and the first conductive pattern and having a penetrating hole penetrating through the second insulating layer, a second conductive pattern formed on the second insulation layer and for mounting a semiconductor element, and a via conductor formed in the penetrating hole in the second insulation layer and connecting the first and second conductive patterns.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, comprising:
providing a support member;
forming a removable layer on the support member;
forming a first insulation layer on the removable layer;
forming a penetrating hole which penetrates through the first insulation layer and reaches at least an intermediate point of the removable layer;
forming a first conductive pattern on the first insulation layer;
filling a plating material in the penetrating hole such that an electrode having a protruding portion protruding from a surface of the first insulation layer toward the intermediate point of the removable layer is formed in the penetrating hole;
forming a second insulation layer on the first insulation layer such that the first conductive pattern is covered by the second insulation layer;
forming on the second insulation layer a second conductive pattern configured to mount a semiconductor element;
mounting a semiconductor element on the second conductive pattern;
separating the support member from a structure comprising the removable layer, the first insulation layer, the first conductive pattern, the electrode, the second insulation layer, the second conductive pattern and the semiconductor element; and
removing the removable layer from the first insulation layer such that the protruding portion of the electrode protrudes from the surface of the first insulation layer.

### Claim 2 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, further comprising encapsulating the semiconductor element with an encapsulating resin before the separating of the support member.

### Claim 3 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the support member is made of glass.

### Claim 4 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the removable layer is made of a thermoplastic resin, and the separating of the support member comprises irradiating laser at the removable layer such that the support member is separated from the structure.

### Claim 5 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the forming of the penetrating hole comprises forming the penetrating hole having a surface tapering toward the removable layer, and the filling of the plating material comprises filling the plating material in the penetrating hole such that the electrode having has a side surface tapering toward the removable layer is formed.

### Claim 6 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the support member is made of glass, and the separating of the support member comprises irradiating laser at the removable layer through the support member such that the support member is separated from the structure.

### Claim 7 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the separating of the support member comprises irradiating laser at the removable layer such that the support member is separated from the structure.