# US 8,785,239 B2 · Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry

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- Number: US 8,785,239 B2
- Document ID: US8785239B2
- Status: Granted
- Kind: B2
- Application number: 13/936,957
- Filed: 2013-07-08
- Published: 2013-11-07
- Granted: 2014-07-22
- Earliest claimed: 2009-04-15
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Timothy A. Quick; Eugene P. Marsh
- Web page: https://patentgrep.com/patent/US8785239B2

## CPC

- H10N 70/023: {by chemical vapor deposition, e.g. MOCVD, ALD}
- C23C 14/30: by electron bombardment
- C23C 16/305: {Sulfides, selenides, or tellurides}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.

## Claims

### Claim 1

A method of depositing a phase-change material onto a substrate, comprising:
providing a vaporized compound consisting of Sb(OR)3 to a substrate, where R is alkyl and Sb(OR)3 is selected from the group consisting of Sb(OC2H5)3, Sb(OCH3)3, Sb(OC3H7)3 and Sb(OC4H9)3;
forming a monolayer comprising Sb(OR)x onto the substrate where x is less than 3;
after forming the monolayer, providing a reducing agent to the monolayer;
utilizing the Sb(OR)3 to form an antimony-comprising phase change material.

### Claim 2 (depends on 1)

The method of claim 1 wherein the phase change material comprises at least one additional metal.

### Claim 3 (depends on 1)

The method of claim 1 wherein the reducing agent and the Sb(OR)3 are provided at the same time.

### Claim 4 (depends on 1)

The method of claim 1 wherein the reducing agent comprises one or more member of the group consisting of NH3, CH2O and CH2O2.

### Claim 5 (depends on 1)

The method of claim 1 wherein the phase change material further comprises at least one of Ge and Te.

### Claim 6 (depends on 1)

The method of claim 1 wherein the forming utilizes chemical vapor deposition.

### Claim 7

A method of forming phase change memory circuitry, comprising:
forming an electrode material over the substrate;
providing a vaporized compound consisting of Sb(OR)3 over the electrode material, where R is alkyl and Sb(OR)3 is selected from the group consisting of Sb(OC2H5)3, Sb(OCH3)3, Sb(OC3H7)3 and Sb(OC4H9)3;
forming a monolayer comprising Sb(OR)x onto the substrate, where x is less than 3;
after forming the monolayer, providing a reducing agent to the monolayer;
forming an Sb-comprising phase change material utilizing the Sb(OR)3 over the electrode material; and
forming an outer electrode material over the phase change material.

### Claim 8 (depends on 7)

The method of claim 7 the providing the reducing agent comprises providing the reducing agent over the electrode material.

### Claim 9 (depends on 8)

The method of claim 8 wherein the Sb(OR)3 and the reducing agent are provided at the same time.

### Claim 10 (depends on 8)

The method of claim 8 wherein the reducing agent is provided after the Sb(OR)3.

### Claim 11 (depends on 7)

The method of claim 7 wherein the phase change material comprises at least one additional metal.

### Claim 12 (depends on 11)

The method of claim 11 wherein the at least one additional metal is selected from Te and Ge.