# US 8,785,230 B2 · Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same

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- Number: US 8,785,230 B2
- Document ID: US8785230B2
- Status: Granted
- Kind: B2
- Application number: 13/723,555
- Filed: 2012-12-21
- Published: 2013-07-04
- Granted: 2014-07-22
- Earliest claimed: 2011-12-28
- Assignees: Korea Institute of Science and Technology
- Applicants: Korea Institute of Science and Technology
- Inventors: Taek Sung Lee; Kyeong Seok Lee; In Ho Kim; Wook Seong Lee; Doo Seok Jeong; Won Mok Kim; Byung Ki Cheong
- Web page: https://patentgrep.com/patent/US8785230B2

## CPC

- H10F 71/134: {Irradiation with electromagnetic or particle radiation}
- G01N 21/554: {detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance}
- G02B 5/008: {Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553)}
- H10F 77/127: {comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe}
- B82Y 15/00: Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
- G01N 33/54373: {involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

## Claims

### Claim 1

A method for manufacturing a localized surface plasmon resonance sensor, comprising:
forming a thin film comprising a chalcogenide material comprising a first material comprising at least one of selenium (Se) and tellurium (Te) and a second material comprising at least one of germanium (Ge) and antimony (Sb); and
forming a localized surface plasmon excitation layer having a predetermined pattern by irradiating laser on the thin film, wherein the thin film is amorphous state and said forming the localized surface plasmon excitation layer comprises crystallizing the chalcogenide material with laser.

### Claim 2 (depends on 1)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 1, wherein said crystallizing the chalcogenide material with laser comprises changing the irradiation location of laser according to the predetermined pattern.

### Claim 3 (depends on 2)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 2, wherein said crystallizing the chalcogenide material with laser comprises adjusting one or more of the intensity of laser, the moving speed of laser and the pulse length of laser.

### Claim 4 (depends on 1)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 1, wherein said crystallizing the chalcogenide material with laser comprises irradiating a plurality of coherent laser beams to the thin film.

### Claim 5 (depends on 4)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 4, wherein the predetermined pattern corresponds to an interference pattern formed by the plurality of coherent laser beams.

### Claim 6 (depends on 1)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 1, wherein said forming the localized surface plasmon excitation layer further comprises removing a laser-unirradiated region from the thin film.

### Claim 7 (depends on 1)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 1, wherein said forming the thin film comprises forming the thin film by sputtering.

### Claim 8 (depends on 1)

The method for manufacturing a localized surface plasmon resonance sensor according to claim 1, wherein said forming the thin film comprises controlling carrier density of the thin film by adjusting the composition of the chalcogenide material.