# US 8,785,227 B2 · Method of manufacturing semiconductor light emitting element including re-growth layer for reducing warpage > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,227 B2 - Document ID: US8785227B2 - Status: Granted - Kind: B2 - Application number: 13/805,515 - Filed: 2011-06-23 - Published: 2013-07-04 - Granted: 2014-07-22 - Earliest claimed: 2010-06-25 - Assignees: Toyoda Gosei Co., Ltd. - Applicants: Hiromitsu Sakai - Inventors: Hiromitsu Sakai - Web page: https://patentgrep.com/patent/US8785227B2 ## CPC - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2901: {Materials} - H10P 14/2925: {Surface structures} - H10P 14/3216: {Nitrides} - H10P 14/3251: {consisting of three or more layers} - H10P 14/3416: {Nitrides} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Provided is a method of manufacturing a semiconductor light emitting element that is capable of making a light emitting wavelength distribution σ of a semiconductor light emitting layer that is obtained small. The method includes a process of laminating a re-growth layer of a compound semiconductor layer on the compound semiconductor substrate which is obtained by forming at least one compound semiconductor layer on a substrate and in which a warping amount H is within a range of 50 μm≦H≦250 μm. The method adopts a method of manufacturing a semiconductor light emitting element including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are formed from a compound semiconductor. This method includes: a process of preparing a compound semiconductor substrate which is obtained by forming at least one compound semiconductor layer on a substrate and in which a warping amount H is within a range of 50 μm≦H≦250 μm; and a process of laminating a re-growth layer of the compound semiconductor layer on the compound semiconductor layer of the compound semiconductor substrate in a metalorganic chemical vapor deposition apparatus. ## Claims ### Claim 1 A method of manufacturing a semiconductor light emitting element including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are formed from a compound semiconductor, the method comprising: providing a compound semiconductor substrate as a raw material substrate which has been obtained by forming at least one compound semiconductor layer on a substrate, said compound semiconductor substrate having a warping amount H within a range of 50 μm≦H≦250 μm; introducing the compound semiconductor substrate into a metal organic chemical vapor deposition apparatus; and laminating a re-growth layer on an uppermost compound semiconductor layer of the compound semiconductor substrate by a metal organic chemical vapor deposition process, said re-growth layer having the same composition as the uppermost compound semiconductor layer of the compound semiconductor substrate. ### Claim 2 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the compound semiconductor is a Group III nitride compound semiconductor. ### Claim 3 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the re-growth layer is formed to have a film thickness of 0.2 to 5 μm. ### Claim 4 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein a temperature of the substrate of the compound semiconductor substrate during the lamination of the re-growth layer is set to 700 to 1,200° C. ### Claim 5 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein a growth pressure during the lamination of the re-growth layer is set to 15 to 100 kPa. ### Claim 6 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, further comprising: a process of setting a substrate temperature of the compound semiconductor substrate during the lamination of the re-growth layer to a range of 700 to 1,200° C.; and a process of setting a growth pressure during the lamination of the re-growth layer to a range of 15 to 100 kPa. ### Claim 7 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein before laminating the re-growth layer, a heat treatment is performed in the same metal organic chemical vapor deposition apparatus as used in claim 1 under conditions of a pressure of 15 to 100 kPa and a substrate temperature of the compound semiconductor substrate of 500 to 1,000° C. and in an atmosphere containing nitrogen and ammonia. ### Claim 8 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the compound semiconductor substrate is obtained by forming at least a buffer layer and an underlying layer on the substrate. ### Claim 9 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the compound semiconductor substrate is obtained by forming at least a buffer layer, an underlying layer, and a first n-type semiconductor layer on the substrate. ### Claim 10 (depends on 1) The method of manufacturing a semiconductor light emitting element according to claim 1, wherein the substrate has a main surface, which includes a flat surface formed from a (0001) C-plane and a plurality of convex portions formed from a surface not parallel with the C-plane, in one surface of the substrate, and the plurality of convex portions have a base portion width d1 of 0.05 to 1.5 μm and a height h of 0.05 to 1 μm.