# US 8,785,224 B2 · Organic light emitting display apparatus and method of manufacturing the same

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- Number: US 8,785,224 B2
- Document ID: US8785224B2
- Status: Granted
- Kind: B2
- Application number: 13/029,617
- Filed: 2011-02-17
- Published: 2011-09-29
- Granted: 2014-07-22
- Earliest claimed: 2010-03-29
- Assignees: Samsung Display Co., Ltd.
- Applicants: Moo Soon Ko; Hee-Seong Jeong; Chi Wook An; Ok-Byoung Kim
- Inventors: Moo Soon Ko; Hee-Seong Jeong; Chi Wook An; Ok-Byoung Kim
- Web page: https://patentgrep.com/patent/US8785224B2

## CPC

- H10K 59/80517: {Multilayers, e.g. transparent multilayers}
- H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K 2102/101: {comprising transparent conductive oxides [TCO]}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light emitting display apparatus and method of manufacturing the same to improve an image quality of the organic light emitting display apparatus. The organic light emitting display apparatus includes: a first electrode formed on a substrate; an intermediate layer disposed on the first electrode, the intermediate layer having an organic emission layer; and a second electrode formed on the intermediate layer, wherein the first electrode includes an etching unit facing the intermediate layer.

## Claims

### Claim 1

A method of manufacturing an organic light emitting display apparatus, the method comprising:
forming a first electrode on a substrate;
forming a pixel defining layer on the first electrode so as to expose a predetermined area of the first electrode after forming the first electrode and before forming an intermediate layer;
crystallizing the surface of the exposed predetermined area of the first electrode;
etching the crystallized surface of the exposed predetermined area of the first electrode;
forming the intermediate layer on the etched crystallized surface of the exposed predetermined area of the first electrode, the intermediate layer having an organic emission layer; and
forming a second electrode on the intermediate layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the etching is formed by wet etching the exposed predetermined area of the first electrode.

### Claim 3 (depends on 1)

The method of claim 1, wherein the etching is formed by an oxalic acid.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first electrode comprises silver (Ag).

### Claim 5 (depends on 1)

The method of claim 1, further comprising crystallizing the surface of the first electrode before forming the etching on the first electrode.

### Claim 6 (depends on 5)

The method of claim 5, wherein a surface of the first electrode comprises ITO, and
wherein the crystallizing of the first electrode comprises crystallizing the ITO.

### Claim 7 (depends on 5)

The method of claim 5, wherein the crystallizing the surface of the first electrode is performed by a heat treatment.

### Claim 8 (depends on 1)

The method of claim 1, wherein the first electrode comprises:
a first conductive layer;
a second conductive layer; and
a third conductive layer,
wherein the first electrode is formed in a stacked structure stacking the first conductive layer, the second conductive layer, and the third conductive layer,
wherein the first conductive layer and the third conductive layer comprise ITO, and
wherein the second conductive layer comprises silver (Ag).

### Claim 9 (depends on 8)

The method of claim 8, wherein the third conductive layer is etched.

### Claim 10 (depends on 1)

The method of claim 1, wherein edges of pixel defining layer overlap edges of the first electrodes.

### Claim 11 (depends on 1)

The method of claim 1, wherein the intermediate layer contact the pixel defining layer at areae of the pixel defining layer overlapping the first electrode.