# US 8,785,219 B1 · Optoelectronic semiconductor device and the manufacturing method thereof

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- Number: US 8,785,219 B1
- Document ID: US8785219B1
- Status: Granted
- Kind: B1
- Application number: 14/219,490
- Filed: 2014-03-19
- Published: 2014-07-24
- Granted: 2014-07-22
- Earliest claimed: 2012-02-02
- Assignees: Epistar Corporation
- Applicants: Tz Chiang Yu; Jenn Hwa Fu; Hsin Hsiung Huang
- Inventors: Tz Chiang Yu; Jenn Hwa Fu; Hsin Hsiung Huang
- Web page: https://patentgrep.com/patent/US8785219B1

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10F 71/128: {Annealing}
- H10F 71/129: {Passivating}
- H10F 77/20: Electrodes
- H10H 20/832: characterised by their material
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

## Claims

### Claim 1

A method of manufacturing an optoelectronic semiconductor device, comprising the steps of:
providing a substrate;
forming an optoelectronic system on the substrate;
forming a barrier layer on the optoelectronic system;
forming an electrode on the barrier layer; and
annealing the optoelectronic semiconductor device;
wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising a step of patterning the optoelectronic system to form a sidewall.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the method of forming the barrier layer comprises physical vapor phase deposition (PVD).

### Claim 4 (depends on 3)

The method according to claim 3, wherein the physical vapor phase deposition (PVD) comprises sputtering deposition.

### Claim 5 (depends on 2)

The method according to claim 2, further comprising a step of forming a passivation layer on a sidewall of the optoelectronic system.

### Claim 6 (depends on 5)

The method device according to claim 5, wherein the material of the passivation layer comprises single metal oxides, complex oxides, or non-conductive compound nitrides.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the material of the passivation layer comprises SiNx.

### Claim 8 (depends on 1)

The method according to claim 1, wherein the material of the barrier layer comprises metal nitride.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the material of the barrier layer comprises TiNx.

### Claim 10 (depends on 1)

The method according to claim 1, wherein the optoelectronic system comprises a first conductivity type layer, a conversion unit, and a second conductivity type layer.

### Claim 11 (depends on 1)

The method according to claim 1, wherein the material of the optoelectronic system comprises one or more elements selected from the group consisting of Ga, Al, In, As, P, N, and Si.

### Claim 12 (depends on 1)

The method according to claim 1, wherein the step of annealing the optoelectronic semiconductor device is performed at an annealing temperature greater than 150° C.

### Claim 13 (depends on 1)

The method according to claim 1, comprising cycling the annealing step more than one time.

### Claim 14 (depends on 1)

The method according to claim 1, wherein the first forward voltage and the second forward voltage are measured under a current of 350 mA applied to the optoelectronic semiconductor device.

### Claim 15 (depends on 1)

The method according to claim 1, wherein the second forward voltage is lower than the first forward voltage.

### Claim 16 (depends on 1)

The method according to claim 1, wherein the thickness of the barrier layer is not less than 10 angstroms.

### Claim 17 (depends on 1)

The method according to claim 1, wherein the substrate is conductive.