# US 8,785,106 B2 · Resist composition and method of forming resist pattern

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- Number: US 8,785,106 B2
- Document ID: US8785106B2
- Status: Granted
- Kind: B2
- Application number: 13/772,658
- Filed: 2013-02-21
- Published: 2013-08-29
- Granted: 2014-07-22
- Earliest claimed: 2012-02-23
- Assignees: Tokyo Ohka Kogyo Co., Ltd.
- Applicants: Tokyo Ohka Kogyo Co., Ltd
- Inventors: Yoshitaka Komuro; Toshiaki Hato
- Web page: https://patentgrep.com/patent/US8785106B2

## CPC

- G03F 7/004: Photosensitive materials (G03F7/12, G03F7/14 take precedence)
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R1 represents a divalent linking group; R2 represents an arylene group which may have a substituent, and each of R3 and R4 independently represents an aryl group which may have a substituent; R3 and R4 may be mutually bonded with the sulfur atom to form a ring; R5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

## Claims

### Claim 1

A resist composition comprising: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein
the photoreactive quencher (C) contains a compound (C1) represented by general formula (c1) shown below:
wherein X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R1 represents a divalent linking group; R2 represents an arylene group which may have a substituent, and each of R3 and R4 independently represents an aryl group which may have a substituent; R3 and R4 may be mutually bonded with the sulfur atom to form a ring; R5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

### Claim 2 (depends on 1)

The resist composition according to claim 1, wherein the base component (A) is a base component (A0) that exhibits increased polarity by the action of acid.

### Claim 3 (depends on 1)

A method of forming a resist pattern, comprising: forming a resist film on a substrate using a resist composition of claim 1; conducting exposure of the resist film; and developing the resist film to form a resist pattern.