# US 8,785,104 B2 · Resist composition and pattern forming method using the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,785,104 B2
- Document ID: US8785104B2
- Status: Granted
- Kind: B2
- Application number: 12/921,354
- Filed: 2009-03-13
- Published: 2011-01-20
- Granted: 2014-07-22
- Earliest claimed: 2008-03-14
- Assignees: FUJIFILM Corporation
- Applicants: Kazuyoshi Mizutani; Jiro Yokoyama; Shinichi Sugiyama
- Inventors: Kazuyoshi Mizutani; Jiro Yokoyama; Shinichi Sugiyama
- Web page: https://patentgrep.com/patent/US8785104B2

## CPC

- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- C08F 8/12: Hydrolysis
- C08F 12/24: Phenols or alcohols
- C08F 212/24: {Phenols or alcohols}
- C09D 125/14: with unsaturated esters
- G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)

## Abstract

A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.

## Claims

### Claim 1

A resist composition, comprising:
(A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer;
(B) a compound capable of generating an acid upon irradiation with actinic rays or radiation;
(C) a compound represented by formula (C1); and
(D) a solvent:
wherein n represents an integer of 1 to 6;
w represents an integer of 1 to 6;
p represents an integer of 1 to 6;
m represents an integer of 1 to 6;
Ra, Rb, Rc and Rd each independently represents a hydrogen atom.

### Claim 2 (depends on 1)

The resist composition according to claim 1,
wherein in formula (C1), n, w and m each is 2.

### Claim 3 (depends on 1)

The resist composition according to claim 1,
wherein the resin (A) that decomposes by an action of an acid to increase the solubility in an alkali developer contains a repeating unit represented by formula (A1):
wherein n represents an integer of 1 to 3;
m represents an integer of 0 to 3, provided that m+n≦5;
A1 represents a group that leaves by an action of an acid or a group containing a group that decomposes by an action of an acid;
S1 represents a substituent and when a plurality of S1's are present, the plurality of S1's may be the same or different; and
B1 represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group.

### Claim 4 (depends on 1)

The resist composition according to claim 1,
wherein the resin (A) that decomposes by an action of an acid to increase the solubility in an alkali developer contains a repeating unit represented by formula (A2):
wherein A2 represents a group that leaves by an action of an acid or a group containing a group that decomposes by an action of an acid; and
B2 represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group.

### Claim 5 (depends on 4)

The resist composition according to claim 4,
wherein the repeating unit represented by formula (A2) is represented by formula (A2′):
wherein Rh, Rk and Rj each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Rk and Rj may combine together to form a ring; and
B2 represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group.

### Claim 6 (depends on 1)

The resist composition according to claim 1,
wherein the compound (B) capable of generating an acid upon irradiation with actinic rays or radiation contains at least one kind of a compound selected from the group consisting of triarylsulfonium salts, diazodisulfone derivatives and oxime esters of an organic sulfonic acid.

### Claim 7 (depends on 1)

The resist composition according to claim 1,
wherein the compound (B) capable of generating an acid upon irradiation with actinic rays or radiation contains at least one kind of a compound selected from the group consisting of triarylsulfonium salts, and at least one kind of a compound selected from the group consisting of diazodisulfone derivatives and oxime esters of an organic sulfonic acid.

### Claim 8 (depends on 1)

The resist composition according to claim 1,
wherein the solvent (D) contains at least one kind of a solvent selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, methoxymethyl propionate, ethoxyethyl propionate, γ-butyrolactone and propylene carbonate.

### Claim 9 (depends on 1)

The resist composition according to claim 1, further comprising:
a basic compound represented by formula (C3) or (C4):
wherein Sa, Sb and Sc each independently represents an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Sa and Sb may combine together to form a ring; and
wherein Sd, Se, Sf and Sg each independently represents an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Sd and Se may combine together to form a ring.

### Claim 10 (depends on 1)

A pattern forming method, comprising:
forming a resist film from the resist composition according to claim 1; and
exposing and developing the resist film.

### Claim 11 (depends on 1)

A pattern forming method, comprising:
forming a resist film from the resist composition according to claim 1;
exposing the resist film through an immersion medium, so as to form an exposed resist film; and
developing the exposed resist film.