# US 8,785,084 B2 · Method for mask fabrication and repair > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,785,084 B2 - Document ID: US8785084B2 - Status: Granted - Kind: B2 - Application number: 13/602,916 - Filed: 2012-09-04 - Published: 2014-03-06 - Granted: 2014-07-22 - Earliest claimed: 2012-09-04 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Yen-Cheng Lu; Shinn-Sheng Yu; Anthony Yen - Inventors: Yen-Cheng Lu; Shinn-Sheng Yu; Anthony Yen - Web page: https://patentgrep.com/patent/US8785084B2 ## CPC - G03F 1/24: Reflection masks; Preparation thereof - G03F 1/72: Repair or correction of mask defects - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method for repairing phase defects for an extreme ultraviolet (EUV) mask is disclosed. The method includes receiving a patterned EUV mask with at least one phase-defect region, determining location and size of the phase-defect region, depositing an absorber material to cover the phase-defect region and removing a portion of the patterned absorption layer near the phase-defect region in the patterned EUV mask to form an absorber-absent region. ## Claims ### Claim 1 A method for repairing a phase defect in an extreme ultraviolet (EUV) mask, the method comprising: receiving a patterned EUV mask, the patterned EUV mask including: an absorptive region, and a reflective region having at least one phase-defect region; determining location and size of the phase-defect region; depositing an absorber material to cover the phase-defect region; and removing a portion of the absorptive region near the phase-defect region in the patterned EUV mask to form an absorber-absent region. ### Claim 2 (depends on 1) The method of claim 1, wherein the patterned EUV mask includes: a low thermal expansion material (LTEM) substrate; a reflective multilayer (ML) above a surface of the LTEM substrate; a conductive layer above an opposite surface of the LTEM substrate; a capping layer above the reflective ML; a buffer layer above the capping layer; and a patterned absorption layer above the buffer layer. ### Claim 3 (depends on 2) The method of claim 2, wherein a defect is located on the surface of the LTEM substrate and beneath the ML. ### Claim 4 (depends on 3) The method of claim 3, wherein the phase-defect region results from the defect. ### Claim 5 (depends on 3) The method of claim 3, wherein the defect is of bump-type. ### Claim 6 (depends on 3) The method of claim 3, wherein the defect is of pit-type. ### Claim 7 (depends on 1) The method of claim 1, wherein the size and location of the phase-defect region is determined by atomic force microscopy (AFM). ### Claim 8 (depends on 1) The method of claim 1, wherein the size and location of the phase-defect region is determined by aerial image metrology system (AIMS). ### Claim 9 (depends on 1) The method of claim 1, wherein the absorber material includes one or more from the group consisting of chromium, chromium oxide, chromium nitride, titanium, titanium oxide, titanium nitride, tantalum, tantalum oxide, tantalum nitride, tantalum oxynitride, tantalum boron nitride, tantalum boron oxide, tantalum boron oxynitride, aluminum, aluminum-copper, aluminum oxide, silver, silver oxide, palladium, ruthenium, and molybdenum. ### Claim 10 (depends on 1) The method of claim 1, wherein the absorber material is deposited locally to cover the phase-defect region in the patterned EUV mask. ### Claim 11 (depends on 10) The method of claim 10, wherein a shape of the deposited absorber material corresponds to the location and size of the phase-defect region. ### Claim 12 (depends on 1) The method of claim 1, wherein the absorber-absent region is formed by a local etching process. ### Claim 13 (depends on 12) The method of claim 12, wherein a shape of the absorber-absent region corresponds to the location and size of the phase-defect region. ### Claim 14 (depends on 1) The method of claim 1, wherein a full thickness of the ML in the phase-defect region is removed by an etching process before depositing the absorber material. ### Claim 15 (depends on 1) The method of claim 1, wherein a portion of the ML in the phase-defect region is removed by an etching process before depositing the absorber material. ### Claim 16 (depends on 15) The method of claim 15, wherein the absorber material is deposited in the phase-defect region after removal of the ML. ### Claim 17 An extreme ultraviolet (EUV) mask, comprising: a patterned EUV mask, the patterned EUV mask including: a low thermal expansion material (LTEM) substrate; a reflective multilayer (ML) above the surface of the LTEM substrate; a defect on the surface of the LTEM substrate or embedded in the reflective ML; a patterned absorption layer above the ML to create a reflective region and an absorptive region; a resultant phase-defect region in the reflective region; an absorber material covering the phase-defect region; and an absorber-absent region in the absorptive region near the phase-defect region. ### Claim 18 (depends on 17) The mask of claim 17, wherein the absorber material has a shape corresponding to the phase-defect region. ### Claim 19 (depends on 17) The mask of claim 17, wherein the absorber-absent region has a shape corresponding to the phase-defect region. ### Claim 20 A method for repairing a phase defect in an extreme ultraviolet (EUV) mask, the method comprising: receiving a patterned EUV mask, the patterned EUV mask including: an absorptive region; and a reflective region having at least one phase-defect region; determining location and size of the phase-defect region by one of atomic force microscopy (AFM) and aerial image metrology system (AIMS); depositing an absorber material to cover the phase-defect region with a shape corresponding to the location and size of the phase-defect region; and removing a portion of the absorptive region near the phase-defect region in the patterned EUV mask to form an absorber-absent region with a shape corresponding to the location and size of the phase-defect region.