# US 8,784,975 B2 · Self-aligned wafer bonding

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- Number: US 8,784,975 B2
- Document ID: US8784975B2
- Status: Granted
- Kind: B2
- Application number: 13/913,817
- Filed: 2013-06-10
- Published: 2013-10-17
- Granted: 2014-07-22
- Earliest claimed: 2009-07-10
- Assignees: Seagate Technology LLC
- Applicants: Seagate Technology LLC
- Inventors: Jun Zheng; Dadi Setiadi
- Web page: https://patentgrep.com/patent/US8784975B2

## CPC

- B23K 31/02: relating to soldering or welding
- B32B 7/03: with respect to the orientation of features (direction of fibres or filaments B32B5/12)
- H10W 74/40: characterised by their materials
- H10W 90/00: Package configurations
- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10W 72/0198: {batch processes}
- H10W 72/072: {of bump connectors}
- H10W 72/07204: {using temporary auxiliary members, e.g. sacrificial coatings}
- H10W 72/07221: {Aligning}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/07254: {changes in dispositions}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 90/722: {between stacked chips}
- Y10T 428/24562: Interlaminar spaces
- Y10T 428/24802: Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T 428/24851: Intermediate layer is discontinuous or differential
- Y10T 428/24917: including metal layer
- Y10T 428/31504: Composite [nonstructural laminate]
- Y10T 428/31678: Of metal
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A wafer article includes a substrate, two or more hydrophilic areas disposed on the substrate, hydrophobic areas surrounding the hydrophilic areas, and a eutectic bonding material disposed on the substrate. A wafer apparatus including two wafers having complimentary hydrophilic regions and eutectic bonding material is disclosed and a method of forming a bonded wafer articles is disclosed.

## Claims

### Claim 1

A wafer apparatus comprising:
a first wafer comprising a first substrate and two or more first hydrophilic areas disposed on the first substrate, first hydrophobic areas surrounding the first hydrophilic areas, and a first eutectic bonding material disposed on the first substrate;
a second wafer comprising a second substrate and two or more second hydrophilic areas disposed on the second substrate, second hydrophobic areas surrounding the second hydrophilic areas, and a second eutectic bonding material disposed on the second substrate and bonded with the first eutectic bonding material, the first hydrophilic areas aligned with and facing the second hydrophilic areas.

### Claim 2 (depends on 1)

A wafer apparatus according to claim 1, further comprising a water droplet disposed on at least selected first hydrophilic areas.

### Claim 3 (depends on 2)

A wafer apparatus according to claim 2, wherein the water droplet contacts complimentary selected second hydrophilic areas and aligns the first hydrophilic areas with the second hydrophilic areas.

### Claim 4 (depends on 3)

A wafer apparatus according to claim 3, wherein the water droplet aligns the first hydrophilic areas with the second hydrophilic areas to within 100 nm or less.

### Claim 5 (depends on 1)

A wafer apparatus according to claim 1, wherein the first eutectic bonding material extends away from the first wafer and the second eutectic bonding material in disposed within a recess of the second wafer.

### Claim 6 (depends on 5)

A wafer apparatus according to claim 5, wherein the first eutectic bonding material extends into the recess of the second wafer.

### Claim 7 (depends on 1)

A wafer apparatus according to claim 1, wherein the eutectic bonding material is a metal alloy eutectic bonding material.

### Claim 8

A wafer apparatus comprising:
a first wafer comprising a first substrate and two or more first hydrophilic areas disposed on the first substrate, first hydrophobic areas surrounding the first hydrophilic areas, and a first eutectic bonding material disposed on the first substrate;
a second wafer comprising a second substrate and two or more second hydrophilic areas disposed on the second substrate, second hydrophobic areas surrounding the second hydrophilic areas, and a second eutectic bonding material disposed on the second substrate, the first hydrophilic areas aligned with and facing the second hydrophilic areas.

### Claim 9 (depends on 8)

A wafer apparatus according to claim 8, further comprising a water droplet disposed on at least selected first hydrophilic areas.

### Claim 10 (depends on 9)

A wafer apparatus according to claim 9, wherein the water droplet contacts complimentary selected second hydrophilic areas and aligns the first hydrophilic areas with the second hydrophilic areas.

### Claim 11 (depends on 10)

A wafer apparatus according to claim 10, wherein the water droplet aligns the first hydrophilic areas with the second hydrophilic areas to within 100 nm or less.

### Claim 12 (depends on 8)

A wafer apparatus according to claim 8, wherein the first eutectic bonding material extends away from the first wafer and the second eutectic bonding material in disposed within a recess of the second wafer.

### Claim 13 (depends on 12)

A wafer apparatus according to claim 12, wherein the first eutectic bonding material extends into the recess of the second wafer.

### Claim 14 (depends on 8)

A wafer apparatus according to claim 8, wherein the eutectic bonding material is a metal alloy eutectic bonding material.