# US 8,784,970 B2 · Fluorite

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- Number: US 8,784,970 B2
- Document ID: US8784970B2
- Status: Granted
- Kind: B2
- Application number: 13/811,352
- Filed: 2011-06-30
- Published: 2013-05-09
- Granted: 2014-07-22
- Earliest claimed: 2010-07-22
- Assignees: Nihon Kessho Kogaku Co., Ltd.
- Applicants: Takafumi Yamazaki; Yusuke Shiro
- Inventors: Takafumi Yamazaki; Yusuke Shiro
- Web page: https://patentgrep.com/patent/US8784970B2

## CPC

- G02B 1/02: made of crystals, e.g. rock-salt, semi-conductors (G02B1/08 takes precedence)
- C01F 11/22: Fluorides
- C30B 11/04: adding crystallising materials or reactants forming it in situ to the melt
- C30B 29/12: Halides
- G03F 1/60: Substrates
- G03F 7/70958: {Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties}
- Y10T 428/24355: Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00})
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A fluorite having all the more excellent laser durability compared to a conventional fluorite is provided. A fluorite is proposed, in which the standard deviation of the surface areas of the Voronoi regions in a diagram from a Voronoi segmentation of the distribution of etch-pits in the (111) plane is 6,000 μm2 or less, or, in which the standard deviation of the distances of the Delaunay edges in a diagram from a Delaunay segmentation of the distribution of etch-pits of the (111) plane is 80 μm or less.

## Claims

### Claim 1

A fluorite, wherein the standard deviation of the surface areas of the Voronoi regions in a diagram from the Voronoi segmentation of the distribution of etch-pits in the (111) plane is 6,000 μm2 or less, and, the standard deviation of the distances of the Delaunay edges in a diagram from the Delaunay segmentation of the distribution of etch-pits of the (111) plane is 80 μm or less when etching of 25° C.×1 hour is performed by immersion in 7% HCl solution, the etched surface is photographed with a light microscope, and the image is digitized, based on the etch-pit image digitized in this way, the etch-pits and portions other than these are processed by binarization, whereby Delaunay segmentation and Voronoi segmentation are performed.