# US 8,784,952 B2 · Method of forming a conductive image on a non-conductive surface > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,784,952 B2 - Document ID: US8784952B2 - Status: Granted - Kind: B2 - Application number: 13/403,797 - Filed: 2012-02-23 - Published: 2013-02-21 - Granted: 2014-07-22 - Earliest claimed: 2012-02-23 - Assignees: Earthone Circuit Technologies Corporation - Applicants: William Wismann - Inventors: William Wismann - Web page: https://patentgrep.com/patent/US8784952B2 ## CPC - H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating} - C23C 18/1673: {Magnetic field} - C23C 18/18: Pretreatment of the material to be coated - H05K 3/105: {by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam} - H05K 3/185: {by making a catalytic pattern by photo-imaging} - H10P 14/46: using a liquid - H10W 20/01: {Manufacture or treatment} - H10W 20/081: {by forming openings in the dielectric parts} - C23C 18/22: Roughening, e.g. by etching - H05K 3/381: {by special treatment of the substrate} - H05K 2203/104: Using magnetic force, e.g. to align particles or for a temporary connection during processing - H05K 2203/1157: Using means for chemical reduction - H10W 20/031: {of conductive parts of the interconnections} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention relates to a method for forming a raised conductive image on a non-conductive or dielectric surface, the method comprising placing a metal coordination complex on a surface of the substrate, exposing the surface to electromagnetic radiation, reducing the exposed complex. removing unexposed complex leaving an elemental metal image, removing unexposed metal complex and then plating the resulting elemental metal image with a highly conductive material. ## Claims ### Claim 1 An analog circuit fabricated using a method comprising the steps of: activating at least a portion of a non-conductive substrate surface; depositing a metal coordination complex on a part of the activated portion of the surface; subjecting the metal coordination complex that is located on the part of the activated portion of the surface to a magnetic field to align molecules of the metal coordination complex with the magnetic field and thereby more deeply injecting the metal coordination complex into the nonconductive substrate than would occur in the step of depositing the metal coordination complex; exposing the metal coordination complex to electromagnetic radiation; reducing the metal coordination complex to elemental metal; removing unreduced metal coordination complex from the surface; drying the surface; and depositing a conductive material onto the surface. ### Claim 2 A digital circuit fabricated using a method comprising the steps of: activating at least a portion of a non-conductive substrate surface; depositing a metal coordination complex on a part of the activated portion of the surface; subjecting the metal coordination complex that is located on the part of the activated portion of the surface to a magnetic field to align molecules of the metal coordination complex with the magnetic field and thereby more deeply injecting the metal coordination complex into the nonconductive substrate than would occur in the step of depositing the metal coordination complex; exposing the metal coordination complex to electromagnetic radiation; reducing the metal coordination complex to elemental metal; removing unreduced metal coordination complex from the surface; drying the surface; and depositing a conductive material onto the surface. ### Claim 3 A mixed-signal circuit fabricated using a method comprising the steps of: activating at least a portion of a non-conductive substrate surface; depositing a metal coordination complex on a part of the activated portion of the surface; subjecting the metal coordination complex that is located on the part of the activated portion of the surface to a magnetic field to align molecules of the metal coordination complex with the magnetic field and thereby more deeply injecting the metal coordination complex into the nonconductive substrate than would occur in the step of depositing the metal coordination complex; exposing the metal coordination complex to electromagnetic radiation; reducing the metal coordination complex to elemental metal; removing unreduced metal coordination complex from the surface; drying the surface; and depositing a conductive material onto the surface. ### Claim 4 An RF circuit fabricated using a method comprising the steps of: activating at least a portion of a non-conductive substrate surface; depositing a metal coordination complex on a part of the activated portion of the surface; subjecting the metal coordination complex that is located on the part of the activated portion of the surface to a magnetic field to align molecules of the metal coordination complex with the magnetic field and thereby more deeply injecting the metal coordination complex into the nonconductive substrate than would occur in the step of depositing the metal coordination complex; exposing the metal coordination complex to electromagnetic radiation; reducing the metal coordination complex to elemental metal; removing unreduced metal coordination complex from the surface; drying the surface; and depositing a conductive material onto the surface. ### Claim 5 (depends on 1) The analog circuit according to claim 1, wherein the method further comprises the step of: applying the magnetic field during the step of depositing the metal coordination complex. ### Claim 6 (depends on 2) The digital circuit according to claim 2, wherein the method further comprises the step of: applying the magnetic field during the step of depositing the metal coordination complex. ### Claim 7 (depends on 3) The mixed-signal circuit according to claim 3, wherein the method further comprises the step of: applying the magnetic field during the step of depositing the metal coordination complex. ### Claim 8 (depends on 4) The RF circuit according to claim 4, wherein the method further comprises the step of: applying the magnetic field during the step of depositing the metal coordination complex. ### Claim 9 (depends on 1) The analog circuit according to claim 1, wherein in the step of subjecting the metal coordination complex to the magnetic field, ligands of the metal coordination complex are aligned with the magnetic field. ### Claim 10 (depends on 2) The digital circuit according to claim 2, wherein in the step of the subjecting the metal coordination complex to the magnetic field, ligands of the metal coordination complex are aligned with the magnetic field. ### Claim 11 (depends on 3) The mixed-signal circuit according to claim 3, wherein in the step of subjecting the metal coordination complex to the magnetic field, ligands of the metal coordination complex are aligned with the magnetic field. ### Claim 12 (depends on 4) The RE circuit according to claim 4, wherein in the step of subjecting the metal coordination complex to the magnetic field, ligands of the metal coordination complex are aligned with the magnetic field. ### Claim 13 A substrate fabricated using a method comprising the steps of: activating at least a portion of a non-conductive substrate surface; depositing a metal coordination complex on a part of the activated portion of the surface; subjecting the metal coordination complex that is located on the part of the activated portion of the surface to a magnetic field to align molecules of the metal coordination complex with the magnetic field and thereby more deeply injecting the metal coordination complex into the nonconductive substrate than would occur in the step of depositing the metal coordination complex; exposing the metal coordination complex to electromagnetic radiation; reducing the metal coordination complex to elemental metal; removing unreduced metal coordination complex from the surface; drying the surface; and depositing a conductive material onto the surface. ### Claim 14 (depends on 13) The substrate according to claim 13, wherein the method further comprises the step of: applying the magnetic field during the step of depositing the metal coordination complex. ### Claim 15 (depends on 13) The substrate according to claim 13, wherein in the step of subjecting the metal coordination complex to the magnetic field, ligands of the metal coordination complex are aligned with the magnetic field.