# US 8,784,948 B2 · Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,784,948 B2
- Document ID: US8784948B2
- Status: Granted
- Kind: B2
- Application number: 13/240,313
- Filed: 2011-09-22
- Published: 2012-02-02
- Granted: 2014-07-22
- Earliest claimed: 2006-12-20
- Assignees: Lam Research Corporation
- Applicants: Rajinder Dhindsa; Jerrel K. Antolik; Scott Stevenot
- Inventors: Rajinder Dhindsa; Jerrel K. Antolik; Scott Stevenot
- Web page: https://patentgrep.com/patent/US8784948B2

## CPC

- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/4417: {Methods specially adapted for coating powder}
- H01J 37/3244: {Gas supply means}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32623: {Mechanical discharge control means}
- H01J 37/32633: {Baffles}
- H01J 37/32642: {Focus rings}
- C23C 16/45517: {Confinement of gases to vicinity of substrate}
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/45587: {Mechanical means for changing the gas flow}
- C23C 16/45591: {Fixed means, e.g. wings, baffles}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- H01J 37/32816: {Pressure}
- H01J 37/32834: {Exhausting}
- H01J 37/3299: {Feedback systems}
- H10P 50/242: {of Group IV materials}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.

## Claims

### Claim 1

A method of controlling gas flow conductance in a plasma processing chamber including an upper electrode disposed opposite a lower electrode with a gap therebetween, the lower electrode adapted to support a substrate, the apparatus comprising a ground ring configured to concentrically surround the lower electrode, the ground ring including a first set of slots formed therein, a bypass choke ring, a cover ring disposed over the ground ring and bypass choke ring, the cover ring including a second set of slots formed therein, and an actuation mechanism adapted to move the bypass choke ring relative to the ground ring to control gas flow conductance through the first and second sets of slots between (i) an ON state in which the first set of slots is in fluid communication with the second set of slots such that gas can flow through the first and second sets of slots and (ii) an OFF state in which the first set of slots is blocked by the bypass choke ring such that gas cannot flow through the first and second sets of slots, the method comprising:
supporting a semiconductor substrate in the plasma processing chamber;
providing process gas into the gap between the upper and lower electrodes;
exciting the process gas into plasma; and
moving the bypass choke ring between the ON state and the OFF state with the actuation mechanism to control a gas flow rate through the first set of slots wherein moving the bypass choke ring comprises rotating the bypass choke ring between the ON state and the OFF state with the actuation mechanism to control gas flow conductance;
the actuation mechanism including an actuation rod coupled to a plasma confinement ring assembly wherein moving the bypass choke ring further comprises moving the actuation rod in an axial direction of the ground ring;
wherein the gas passes through the first and second set of slots and is removed from the plasma processing chamber by a vacuum pump.

### Claim 2 (depends on 1)

The method of claim 1, wherein: (a) the ground ring and the cover ring are stationary and the first set of slots is aligned with the second set of slots and/or (b) each of the cover ring and bypass choke ring is formed of dielectric material, and the ground ring is formed of conducting material.

### Claim 3 (depends on 2)

The method of claim 2, wherein the cover ring and the bypass choke ring are formed of quartz or SiC, and the ground ring is formed of metal.

### Claim 4 (depends on 1)

The method of claim 1, wherein the plasma confinement ring assembly of the actuation mechanism is adapted to encircle the gap defined between the upper electrode and lower electrode and includes at least one confinement ring, wherein the plasma confinement ring assembly is movable in the axial direction of the ground ring to control gas flow through gaps between the confinement rings.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
a pressure sensor for measuring gas pressure in the plasma processing chamber and sending a sensor signal; and
a control device responsive to the sensor signal and operative to send a control signal for controlling the actuation mechanism for moving the bypass choke ring relative to the ground ring.

### Claim 6 (depends on 1)

The method of claim 1, wherein the actuation mechanism further comprises:
the actuation rod;
the plasma confinement ring assembly coupled to the actuation rod and operative to move the actuation rod in an axial direction of the ground ring and wherein the actuation rod comprises a first end and a second end coupled to the actuation system;
a shaft rotatably secured to the ground ring and having a rotational axis substantially perpendicular to the axial direction of the ground ring;
an elongated arm having one end secured to one end of the shaft and the other end coupled to the bypass choke ring;
a lever having first and second ends and secured to the shaft intermediate the first and second ends thereof;
a counterweight attached to the first end of the lever; and
an actuation component attached to the second end of the lever and urged against the first end of the actuation rod by the counterweight,
wherein moving the bypass choke ring further comprises:
rocking the lever along the rotational axis of the shaft;
rotating the shaft and the elongated arm along the rotational axis of the shaft; and
rotating the bypass choke ring to rotate relative to the ground ring.

### Claim 7 (depends on 1)

The method of claim 1, wherein the actuation mechanism further comprises:
the actuation rod comprising a first end coupled to the plasma confinement ring assembly and a tapered end portion opposite to the first end;
a lever comprising first and second end portions and pivoted to the ground ring intermediate the first and second end portions about an axis substantially parallel to the axial direction of the ground ring, the second end portion of the lever being in sliding contact with the tapered end portion of the actuation rod;
an elongated arm having one end secured to the first end portion of the lever and the other end coupled to the bypass choke ring, and a first spring having two ends respectively secured to the ground ring and the lever and operative to resiliently urge the second end portion of the lever against the tapered end portion of the actuation rod; and
wherein moving the bypass choke ring further comprises:
moving the tapered end portion of the actuation rod in an axial direction of the ground ring;
rocking the lever;
rotating the elongated arm; and
rotating the bypass choke ring relative to the ground ring.

### Claim 8 (depends on 1)

The method of claim 1, wherein the actuation mechanism further comprises:
the actuation rod comprising a first end coupled to the plasma confinement ring assembly and a tapered end portion opposite to the first end;
a first actuation component in contact with the first end of the actuation rod and movable in the axial direction of the ground ring;
a second actuation component coupled to the first actuation component and pivoted to the ground ring about an axis substantially parallel to the axial direction of the ground ring;
an elongated arm secured at one end to the second actuation component and coupled at the other end to the bypass choke ring;
a spring for resiliently urging the first actuation component toward the actuation rod and thereby urging the first actuation component against the first end of the actuation rod; and
a support element secured to the ground ring and operative to provide mechanical support for the spring and the first actuation component; and
wherein moving the bypass choke ring further comprises:
moving the first actuation component in the axial direction of the ground ring;
rotating the second actuation component;
rotating the elongated arm; and
rotating the bypass choke ring to rotate relative to the ground ring.

### Claim 9 (depends on 1)

The method of claim 1, wherein the actuation mechanism further comprises:
a motor having a rotor; and
an L-shaped arm secured to the rotor at one end and coupled to the bypass choke ring at the other end; and
wherein moving the bypass choke ring further comprises:
rotating the rotor with the motor;
rotating the L-shaped arm; and
rotating the bypass choke ring to rotate relative to the ground ring.

### Claim 10

A method of controlling gas flow conductance in a plasma processing chamber including an upper electrode disposed opposite a lower electrode with a gap therebetween, the lower electrode adapted to support a substrate, the apparatus comprising a ground ring configured to concentrically surround the lower electrode, the ground ring including a first set of slots formed therein, a bypass choke ring, a cover ring disposed over the ground ring and bypass choke ring, the cover ring including a second set of slots formed therein, and an actuation mechanism adapted to move the bypass choke ring relative to the ground ring to control gas flow conductance through the first and second sets of slots between (i) an ON state in which the first set of slots is in fluid communication with the second set of slots such that gas can flow through the first and second sets of slots and (ii) an OFF state in which the first set of slots is blocked by the bypass choke ring such that gas cannot flow through the first and second sets of slots, the method comprising:
supporting a semiconductor substrate in the plasma processing chamber;
providing process gas into the gap between the upper and lower electrodes;
exciting the process gas into plasma; and
moving the bypass choke ring between the ON state and the OFF state with the actuation mechanism to control a gas flow rate through the first set of slots;
wherein the gas passes through the first and second set of slots and is removed from the plasma processing chamber by a vacuum pump;
wherein moving the bypass choke ring comprises moving, in an axial direction, the bypass choke between the ON state and OFF state with the actuation mechanism to control gas flow conductance; and
the bypass choke ring comprises multiple protrusions;
the actuation mechanism further comprises:
a plasma confinement ring assembly and an actuation rod coupled to the plasma confinement ring assembly; and
wherein moving the bypass choke ring further comprises:
moving the actuation rod in an axial direction of the ground ring; and
controlling a spacing between the protrusions and inner surfaces of the slots.