# US 8,784,936 B2 · Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

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- Number: US 8,784,936 B2
- Document ID: US8784936B2
- Status: Granted
- Kind: B2
- Application number: 13/370,072
- Filed: 2012-02-09
- Published: 2012-06-07
- Granted: 2014-07-22
- Earliest claimed: 2006-03-10
- Assignees: Advanced Technology Materials, Inc.
- Applicants: Chongying Xu; Tianniu Chen; Thomas M. Cameron; Jeffrey F. Roeder; Thomas H. Baum
- Inventors: Chongying Xu; Tianniu Chen; Thomas M. Cameron; Jeffrey F. Roeder; Thomas H. Baum
- Web page: https://patentgrep.com/patent/US8784936B2

## CPC

- C23C 14/088: {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal}
- C07F 17/00: Metallocenes
- C23C 16/409: {of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

## Claims

### Claim 1

A method of depositing a thin film of strontium on a substrate, said method comprising contacting the substrate with a vapor of a precursor composition, wherein the precursor composition comprises the compound bis(tetramethyl-n-propylcyclopentadienyl)strontium and wherein the compound is not coordinated with tetrahydrofuran, and further comprising concurrent or sequential deposition of titanium from a titanium source reagent to produce a titanate film.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the compound is uncoordinated with any complexation agents.

### Claim 3 (depends on 1)

The method according to claim 1, comprising chemical vapor deposition or atomic layer deposition.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the titanate film is strontium titanate.

### Claim 5 (depends on 1)

The method according to claim 1, further comprising a solvent medium.

### Claim 6 (depends on 5)

The method according to claim 5, wherein the solvent medium comprises a solvent species selected from the group consisting of C3-C12 alkanes, C2-C12 ethers, C6-C12 aromatics, C7-C16 arylalkanes, C10-C25 arylcyloalkanes, and further alkyl-substituted forms of aromatic, arylalkane and arylcyloalkane species, wherein the further alkyl substituents in the case of multiple alkyl substituents may be the same as or different from one another and wherein each is independently selected from C1-C8 alkyl.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the solvent medium is tetrahydrofuran, xylene, 1,4-tertbutyltoluene, 1,3-diisopropylbenzene, tetrahydronaphthalene, dihydrodimethylnaphthalene, octane or decane.

### Claim 8 (depends on 1)

The method according to claim 1, comprising chemical vapor deposition.

### Claim 9 (depends on 1)

The method according to claim 1, comprising atomic layer deposition.

### Claim 10 (depends on 1)

The method according to claim 1, comprising concurrent deposition of titanium from a titanium source reagent to produce a titanate film.

### Claim 11 (depends on 1)

The method according to claim 1, comprising sequential deposition of titanium from a titanium source reagent to produce a titanate film.