# US 8,784,766 B1 · Diamond synthesis employing nanoparticle seeds > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,784,766 B1 - Document ID: US8784766B1 - Status: Granted - Kind: B1 - Application number: 12/689,180 - Filed: 2010-01-18 - Granted: 2014-07-22 - Earliest claimed: 2009-01-16 - Assignees: University of Puerto Rico - Applicants: Kishore Uppireddi; Gerardo Morell; Brad R. Weiner - Inventors: Kishore Uppireddi; Gerardo Morell; Brad R. Weiner - Web page: https://patentgrep.com/patent/US8784766B1 ## CPC - C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating} - C01B 32/26: Preparation (by using ultra-high pressure B01J3/06; by crystal growth C30B29/04) - C23C 16/271: {using hot filaments} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} ## Abstract Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods. ## Claims ### Claim 1 A method of synthesizing diamond comprising: depositing iron oxide nanoparticle seeds on a substrate, said iron oxide nanoparticle seeds being capable of carbide formation; and directing a stream of gas composition at the seeded substrate under conditions that effect diamond growth. ### Claim 2 (depends on 1) The method of claim 1, wherein said substrate comprises a metal substrate. ### Claim 3 (depends on 2) The method of claim 2, wherein said metal substrate comprises at least one of: copper, molybdenum, aluminum, tantalum, tungsten, and nickel. ### Claim 4 (depends on 1) The method of claim 1, wherein said substrate comprises a semiconductor substrate. ### Claim 5 (depends on 4) The method of claim 4, wherein said semiconductor substrate comprises at least one of: silicon, germanium, and gallium arsenide. ### Claim 6 (depends on 1) The method of claim 1, wherein said substrate comprises an insulator substrate. ### Claim 7 (depends on 6) The method of claim 6, wherein said insulator substrate comprises at least one of: quartz, glass, gallium nitride, silicon carbide, and boron nitride. ### Claim 8 (depends on 1) The method of claim 1, wherein said iron oxide nanoparticle seeds have a size of about 1 nm to about 50 nm. ### Claim 9 (depends on 1) The method of claim 1, wherein said iron oxide nanoparticle seeds have a size of about 4 nm to about 15 nm. ### Claim 10 (depends on 1) The method of claim 1, wherein said iron oxide nanoparticle seeds have a surface density of about 107 cm2 to about 1010 cm2. ### Claim 11 (depends on 1) The method of claim 1, wherein said iron oxide nanoparticle seeds have a surface density of about 105 cm2 to about 107 cm2. ### Claim 12 (depends on 1) The method of claim 1, wherein once said substrate is coated, is kept at a temperature of from about 100° C. to about 1000° C. ### Claim 13 (depends on 1) The method of claim 1, wherein once said substrate is coated, is kept at a temperature of from about 400° C. to about 800° C. ### Claim 14 (depends on 1) The method of claim 1, wherein the growth rate for diamond formation is of about 1.7 μm/h to about 1.9 μm/h. ### Claim 15 (depends on 1) The method of claim 1, wherein said iron oxide nanoparticle seeds are uniformly distributed over the substrate. ### Claim 16 (depends on 1) The method of claim 1, wherein said gas composition comprises at least one compound having at least one carbon-hydrogen bond; and a diluent gas. ### Claim 17 (depends on 16) The method of claim 16, wherein said at least one compound having at least one carbon-hydrogen bond comprises methane (CH4). ### Claim 18 (depends on 16) The method of claim 16, wherein said diluent gas is selected from the group consisting of: hydrogen, nitrogen, helium, neon, argon, xenon and krypton. ### Claim 19 (depends on 1) The method of claim 1, wherein said substrate has a diameter of about 14 mm and a thickness of about 0.5 mm. ### Claim 20 (depends on 1) The method of claim 1, wherein the step of depositing said iron oxide nanoparticle seeds on the substrate comprises: coating said substrate with a uniformly distributed iron oxide nanoparticle seeds. ### Claim 21 (depends on 1) The method of claim 1, wherein the step of directing a stream of gas composition at the seeded substrate comprises: positioning said coated substrate inside a chemical vapor deposition (CVD) apparatus; and directing a mixture of methane (CH4) in hydrogen (H2) over a heated metal filament. ### Claim 22 (depends on 21) The method of claim 21, wherein said heated metal filament comprises rhenium (Re). ### Claim 23 (depends on 21) The method of claim 21, wherein said heated metal filament is kept at a temperature of about 2700 K and positioned at a distance of about 10 mm above said substrate. ### Claim 24 (depends on 21) The method of claim 21, further comprising: maintaining a constant pressure inside said (CVD) furnace of from about 20 Torr to about 50 Torr. ### Claim 25 (depends on 21) The method of claim 21, further comprising: maintaining said substrate at a temperature of from about 700° C. to about 730° C. ### Claim 26 (depends on 1) The method of claim 1, wherein continuous films of diamond are formed with a thickness of from about 10 μm to about 11 μm. ### Claim 27 (depends on 26) The method of claim 26, wherein said diamond films have a quality factor of from about 97% to about 98%.