# US 8,784,699 B2 · In-Ga-Zn-type oxide, oxide sintered body, and sputtering target

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- Number: US 8,784,699 B2
- Document ID: US8784699B2
- Status: Granted
- Kind: B2
- Application number: 13/257,683
- Filed: 2010-11-17
- Published: 2012-08-30
- Granted: 2014-07-22
- Earliest claimed: 2009-11-19
- Assignees: Idemitsu Kosan Co., Ltd.
- Applicants: Koki Yano; Masayuki Itose; Hirokazu Kawashima
- Inventors: Koki Yano; Masayuki Itose; Hirokazu Kawashima
- Web page: https://patentgrep.com/patent/US8784699B2

## CPC

- C04B 35/453: based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C01G 9/02: Oxides; Hydroxides
- C01G 15/00: Compounds of gallium, indium or thallium
- C01G 15/006: {Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements}
- C04B 35/62675: {characterised by the treatment temperature}
- C23C 14/08: Oxides (C23C14/10 takes precedence)
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3286: Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
- C04B 2235/5409: expressed by specific surface values
- C04B 2235/6562: Heating rate
- C04B 2235/6565: Cooling rate
- C04B 2235/6567: Treatment time
- C04B 2235/658: Atmosphere during thermal treatment
- C04B 2235/6585: at an oxygen percentage above that of air
- C04B 2235/664: Reductive annealing
- C04B 2235/666: Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
- C04B 2235/77: Density
- C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B 2235/963: Surface properties, e.g. surface roughness
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/3426: {Oxides}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.

## Claims

### Claim 1

An oxide comprising indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.

### Claim 2 (depends on 1)

The oxide according to claim 1, wherein the atomic ratio of indium (In), gallium (Ga) and zinc (Zn) satisfies the following formulas (1) and (2):
0.45≦Zn/(In+Ga+Zn)≦0.60 (1)
0.21≦Ga/(In+Ga)≦0.29 (2).

### Claim 3 (depends on 1)

The oxide according to claim 1, wherein all metal elements contained in the oxide consist essentially of In, Ga and Zn.

### Claim 4 (depends on 1)

The oxide according to claim 1, wherein a diffraction peak is observed at an incident angle (2θ) of 14.8° to 16.2°.

### Claim 5 (depends on 1)

The oxide according to claim 1, wherein diffraction peaks are observed at an incident angle (2θ) of 14.8° to 16.2° and 22.3° to 24.3°.

### Claim 6 (depends on 1)

The oxide according to claim 1, wherein diffraction peaks are observed at an incident angle (2θ) of 14.8° to 16.2°, 22.3° to 24.3°, 32.2° to 34.2°, 43.1° to 46.1°, 46.2° to 49.2°, 62.7° to 66.7°.

### Claim 7 (depends on 1)

An oxide sintered body which comprises the oxide according to claim 1.

### Claim 8 (depends on 7)

The oxide sintered body according to claim 7, wherein the atomic ratio of indium (In), gallium (Ga) and zinc (Zn) satisfies the following formulas (1′) and (2′):
0.15≦Zn/(In+Ga+Zn)≦0.65 (1′)
0.05≦Ga/(In+Ga)≦0.45 (2′).

### Claim 9 (depends on 7)

A sputtering target comprising the oxide sintered body according to claim 7.

### Claim 10 (depends on 9)

An oxide thin film formed by using the sputtering target according to claim 9.

### Claim 11 (depends on 9)

A method for producing the sputtering target according to claim 9, comprising the following steps of:
(a) preparing a shaped body with a thickness of 5.5 mm or more;
(b) sintering the shaped body at a temperature of 1380° C. or more and 1520° C. or less for 4 to 24 hours; and
(c) grinding one or both surfaces of the sintered shaped body by 0.1 mm or more.