# US 8,784,672 B2 · Photomasks and methods of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,784,672 B2 - Document ID: US8784672B2 - Status: Granted - Kind: B2 - Application number: 13/279,859 - Filed: 2011-10-24 - Published: 2012-06-14 - Granted: 2014-07-22 - Earliest claimed: 2010-12-13 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Jong-Keun Oh; Dae-Hyuk Kang; Chan-Uk Jeon; Hyung-Ho Ko; Sung-Jae Han; Jung-Jin Kim - Inventors: Jong-Keun Oh; Dae-Hyuk Kang; Chan-Uk Jeon; Hyung-Ho Ko; Sung-Jae Han; Jung-Jin Kim - Web page: https://patentgrep.com/patent/US8784672B2 ## CPC - G03F 1/48: Protective coatings - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - G03F 1/50: Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof - G03F 1/54: Absorbers, e.g. of opaque materials - G03F 1/68: Preparation processes not covered by groups G03F1/20 - G03F1/50 - G03F 1/46: Antireflective coatings - G03F 1/80: Etching - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract In a method of manufacturing a photomask pattern, a light-shielding layer pattern and an anti-reflective layer pattern are formed sequentially on a transparent substrate. Oxidation and nitridation processes are performed on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern. ## Claims ### Claim 1 A method of manufacturing a photomask, comprising: forming a light-shielding layer pattern and an anti-reflective layer pattern sequentially on a transparent substrate; and performing an oxidation and a nitridation on a sidewall of the light-shielding layer pattern to form a protection layer pattern on a lateral portion of the light-shielding layer pattern using oxygen (O2) gas and nitrogen (N2) gas, wherein a mixing ratio of the oxygen gas and the nitrogen gas is within about 1:5 to about 1:8. ### Claim 2 (depends on 1) The method of claim 1, wherein the oxidation and the nitridation on the sidewall of the light-shielding layer pattern are performed by a plasma treatment using the oxygen (O2) gas and the nitrogen (N2) gas in a reactive gas. ### Claim 3 (depends on 2) The method of claim 2, wherein the plasma treatment is performed in a chamber maintained at a temperature of about 200° C. to about 400° C. ### Claim 4 (depends on 1) The method of claim 1, wherein the light-shielding layer pattern includes at least one selected from chromium (Cr), aluminum (Al), rubidium (Rb), tantalum (Ta), tantalum boron oxide (TaBO) and tantalum boron nitride (TaBN). ### Claim 5 (depends on 4) The method of claim 4, wherein the light-shielding layer pattern includes chromium. ### Claim 6 (depends on 5) The method of claim 5, wherein the protection layer pattern includes either chromium oxynitride (CrNOx) or a mixture of chromium oxide (CrOx) and chromium nitride (CrNx). ### Claim 7 (depends on 1) The method of claim 1, wherein the anti-reflective layer pattern includes at least one of chromium oxide (CrOx), chromium nitride (CrNx), titanium nitride (TiN) and titanium oxide (TiOx). ### Claim 8 (depends on 1) The method of claim 1, wherein the protection layer pattern is not etched by an acidic solution. ### Claim 9 (depends on 1) The method of claim 1, wherein the oxidation and the nitridation on the sidewall of the light-shielding layer pattern are performed by a rapid thermal process (RTP) in an atmosphere of oxygen (O2) gas and nitrogen (N2) gas. ### Claim 10 (depends on 1) The method of claim 1, wherein the oxidation and the nitridation on the sidewall of the light-shielding layer pattern are performed by a light emitting process in an atmosphere of oxygen (O2) gas and nitrogen (N2) gas. ### Claim 11 (depends on 10) The method of claim 10, wherein the light emitting process is performed using an ultraviolet (UV) light having a wavelength no greater than about 200 nm. ### Claim 12 A method of manufacturing a photomask, comprising: forming a light-shielding layer composed of chromium (Cr) on a transparent substrate; forming an anti-reflective layer composed of chromium oxide (CrOx) on the light-shielding layer; partially etching the anti-reflective layer and the light-shielding layer to form a light-shielding layer pattern and an anti-reflective layer pattern sequentially stacked on the transparent substrate; and performing an oxidation and a nitridation on a sidewall of the light-shielding layer pattern using oxygen (O2) gas and nitrogen (N2) gas in a chamber maintained at a temperature of about 200° C. to about 400° C. to form a protection layer pattern composed of either chromium oxynitride (CrNOx), or a mixture of chromium oxide (CrOx) and chromium nitride (CrNx) on a lateral portion of the light-shielding layer pattern, and wherein the protection layer pattern has a thickness of about 0.1 nm to about 50 nm, and wherein a mixing ratio of the oxygen (O2) gas and the nitrogen (N2) gas is within about 1:5 to about 1:8. ### Claim 13 (depends on 12) The method of claim 12, wherein the thickness of the protection layer pattern is no greater than about 5 nm. ### Claim 14 (depends on 12) The method of claim 12, wherein the oxidation and the nitridation on the sidewall of the light-shielding layer pattern are performed by a plasma treatment using the oxygen (O2) gas and the nitrogen (N2) gas in a reactive gas, and wherein a first flow rate of the nitrogen (N2) gas is controlled to be about 5 times greater than a second flow rate of the oxygen (O2) gas.