# US 8,784,622 B2 · System and method for dual-sided sputter etch of substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,784,622 B2 - Document ID: US8784622B2 - Status: Granted - Kind: B2 - Application number: 12/329,447 - Filed: 2008-12-05 - Published: 2009-06-11 - Granted: 2014-07-22 - Earliest claimed: 2007-12-06 - Assignees: Intevac, Inc. - Applicants: Michael S. Barnes; Terry Bluck - Inventors: Michael S. Barnes; Terry Bluck - Web page: https://patentgrep.com/patent/US8784622B2 ## CPC - G11B 5/84: Processes or apparatus specially adapted for manufacturing record carriers - G11B 5/855: Coating only part of a support with a magnetic layer - H01J 37/3438: {Electrodes other than cathode} - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A system is provided for etching patterned media disks. A movable non-contact electrode is utilized to perform sputter etch. The electrode moves to near contact distance to, but not contacting, the substrate so as to couple RF energy to the disk. The material to be etched may be metal, e.g., Co/Pt/Cr or similar metals. The substrate is held vertically in a carrier and both sides are etched serially. That is, one side is etched in one chamber and then in the next chamber the second side is etched. An isolation valve is disposed between the two chambers and the disk carrier moves the disks between the chambers. The carrier may be a linear drive carrier, using, e.g., magnetized wheels and linear motors. ## Claims ### Claim 1 An etch chamber for etching disks, comprising: a chamber body having a transport section for carrier transport and processing section, and having tracks in the transport section; a disk carrier riding on the tracks so as to position the disk in the processing section, wherein the disk is held by its periphery by clips and is held vertically such that both sides of the disk can be processed; a precursor gas delivery assembly coupled to the chamber body; a movable electrode assembly coupled on one side of the chamber body and having a conductive electrode and an electrode cover; wherein the movable electrode is constructed to selectively have the conductive electrode assume a position proximal to backside surface of the disk without touching any surface of the disk for processing, and a position distal to the disk for disk transport; wherein the electrode cover covers the edges of the disk and thereby prevents plasma from reaching the backside surface of the disk, and the electrode cover has notches that match the clips so that when the conductive electrode is in its proximal position the cover does not touch the clips; and, RF source coupled to the electrode to thereby capacitively couple RF energy to the backside surface of the disk and cause plasma species to accelerate towards the disk so as to etch the surface opposite the backside surface of the disk. ### Claim 2 (depends on 1) The etch chamber of claim 1, wherein the precursor gas delivery assembly comprises a showerhead provided on a side of the chamber opposite the movable electrode assembly, and wherein plasma is ignited between the showerhead and the surface opposite the backside surface of the disk. ### Claim 3 (depends on 1) The etch chamber of claim 1, wherein the carrier has magnetic wheels and the tracks are made of paramagnetic material. ### Claim 4 (depends on 1) The etch chamber of claim 1, wherein the conductive electrode is made of hard anodized aluminum and has an exposed surface configured to be placed at a distance to the disk of from 0.02″ to 0.75″ in the proximal position. ### Claim 5 (depends on 1) The etch chamber of claim 1, wherein the movable electrode assembly comprises: a movable support; and, a motion assembly coupled to the movable support. ### Claim 6 (depends on 5) The etch chamber of claim 5, wherein the electrode cover is provided about the electrode and exposing the exposed surface of the conductive electrode, wherein the electrode cover extends beyond the conductive electrode so that when the conductive electrode is in position proximal to the disk, the electrode cover covers the edges of the disk such that the electrode cover prevents plasma species from attacking sides of the disk and prevents plasma from reaching backside surface of the disk. ### Claim 7 (depends on 6) The etch chamber of claim 6, wherein the electrode cover is constructed so as to assume a processing position covering the periphery of the disk. ### Claim 8 (depends on 5) The etch chamber of claim 5, wherein the movable electrode assembly is constructed so as to place the exposed surface of the conductive electrode at a distance of between 0.02″ to 0.75″ from the disk in order to effectively couple RF energy to the disk. ### Claim 9 (depends on 5) The etch chamber of claim 5, further comprising a proximity sensor measuring distance between the exposed surface of the conductive electrode and the disk. ### Claim 10 (depends on 9) The etch chamber of claim 9, wherein the proximity sensor comprises fiber optics coupled to an optical sensor. ### Claim 11 (depends on 1) The etch chamber of claim 1, wherein the precursor gas delivery assembly comprises a grounded showerhead. ### Claim 12 (depends on 5) The etch chamber of claim 5, further comprising fluid pipes delivering heat exchange fluids to the conductive electrode. ### Claim 13 (depends on 1) The etch chamber of claim 1, wherein the conductive electrode comprises anodized aluminum.