# US 8,784,568 B2 · Method of cleaning semiconductor manufacturing apparatus, semiconductor manufacturing apparatus, and management system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,784,568 B2 - Document ID: US8784568B2 - Status: Granted - Kind: B2 - Application number: 13/051,804 - Filed: 2011-03-18 - Published: 2011-09-29 - Granted: 2014-07-22 - Earliest claimed: 2010-03-24 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kenichiro Toratani; Takashi Nakao - Inventors: Kenichiro Toratani; Takashi Nakao - Web page: https://patentgrep.com/patent/US8784568B2 ## CPC - C23C 16/4412: {Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps} - C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract In one embodiment, a method of cleaning a semiconductor manufacturing apparatus includes supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from an exhaust pipe of the treatment chamber per unit time. The method further includes supplying an inert gas to fill the supply pipe with the inert gas. ## Claims ### Claim 1 A method of cleaning a semiconductor manufacturing apparatus, the method comprising: simultaneously supplying a cleaning gas for removing a deposition film deposited on an inside wall of a treatment chamber and an inert gas through a supply pipe of the treatment chamber so that a supply amount of the cleaning gas from the supply pipe per unit time is greater than an exhaust amount of the cleaning gas from n exhaust pipe of the treatment chamber per unit time; and supplying the inert gas while stopping the supply of the cleaning gas to increase a pressure in the treatment chamber and to fill the supply pipe with the inert gas after the cleaning gas and the inert gas are simultaneously supplied. ### Claim 2 (depends on 1) The method of claim 1, further comprising: vacuumizing the treatment chamber by exhausting the cleaning gas and the inert gas through the exhaust pipe. ### Claim 3 (depends on 2) The method of claim 2, wherein the simultaneous supplying of the cleaning gas and the inert gas through the supply pipe, the increasing of the pressure in the treatment chamber and the filling of the supply pipe with the inert gas, and the vacuumizing of the treatment chamber are repeated a plurality of times depending on a thickness of the deposition film within a predetermined cleaning time period. ### Claim 4 (depends on 2) The method of claim 2, wherein the simultaneous supplying of the cleaning gas and the inert gas through the supply pipe is performed by supplying the cleaning gas into the treatment chamber in a state that an exhaust valve of the exhaust pipe is closed, or by supplying the cleaning gas into the treatment chamber in a state that the exhaust valve is opened and closing the exhaust valve after the cleaning gas is supplied, the increasing of the pressure in the treatment chamber and the filling of the supply pipe with the inert gas are performed in a state that the exhaust valve is closed, and the vacuumizing of the treatment chamber is performed in a state that he exhaust valve is opened. ### Claim 5 (depends on 1) The method of claim 1, wherein the inert gas is supplied to fill the supply pipe and the exhaust pipe with the inert gas. ### Claim 6 (depends on 1) The method of claim 1, wherein a surface of an inside wall of the supply pipe is formed of a material which is not etched by the cleaning gas. ### Claim 7 (depends on 1) The method of claim 1, wherein an inside wall of the exhaust pipe is coated with a protection film capable of being etched by the cleaning gas. ### Claim 8 (depends on 1) The method of claim 1, wherein the cleaning gas contains at least a halogen gas. ### Claim 9 (depends on 1) The method of claim 1, wherein the inert gas is a helium (He) gas, a neon (Ne) gas, an argon (Ar) gas, a nitrogen (N2) gas, or clean dry air (CDA). ### Claim 10 (depends on 1) The method of claim 1, wherein the treatment chamber comprises an outer pipe, and an inner pipe provided in the outer pipe. ### Claim 11 (depends on 10) The method of claim 10, wherein the inner pipe comprises the supply pipe, and a supply valve of the supply pipe; and the outer pipe comprises the exhaust pipe, and an exhaust valve of the exhaust pipe. ### Claim 12 (depends on 10) The method of claim 10, wherein the simultaneous supplying of the cleaning gas and the inert gas through the supply pipe, and the increasing of the pressure in the treatment chamber and the filling of the supply pipe with the inert gas are repeated a plurality of times depending on a thickness of the deposition film within a predetermined cleaning time period, and the treatment chamber is vacuumized after the simultaneous supplying of the cleaning gas and the inert gas through the supply pipe, the increasing of the pressure in the treatment chamber, and the filling of the supply pipe with the cleaning gas are repeated the plurality of times.