# US 8,784,563 B2 · Gas mixer and manifold assembly for ALD reactor

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- Number: US 8,784,563 B2
- Document ID: US8784563B2
- Status: Granted
- Kind: B2
- Application number: 13/316,372
- Filed: 2011-12-09
- Published: 2012-04-05
- Granted: 2014-07-22
- Earliest claimed: 2003-08-29
- Assignees: ASM America, Inc.
- Applicants: Ryan M Schmidt; Mohith Verghese
- Inventors: Ryan M Schmidt; Mohith Verghese
- Web page: https://patentgrep.com/patent/US8784563B2

## CPC

- C23C 16/45512: {Premixing before introduction in the reaction chamber}
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/45563: {Gas nozzles}
- C23C 16/45565: {Shower nozzles}
- C23C 16/45591: {Fixed means, e.g. wings, baffles}
- Y10T 137/87652: With means to promote mixing or combining of plural fluids
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.

## Claims

### Claim 1

A gas distribution system for use with an Atomic Layer Deposition (ALD) chamber, the gas distribution system comprising:
a first reactant line;
a second reactant line; and
a mixer communicating with the first and second reactant lines and a source of inert gas, and configured to form a mixture of a reactant gas from the second reactant line with a buffer gas from the first reactant line, the mixer comprising an upstream member having a base, a distal end located in a downstream direction from the base, and an outer mixing surface located between the base and the distal end, the outer mixing surface narrowing in the downstream direction and having a shape which causes circular flow of the reactant gas from the second reactant line and the buffer gas to form the mixture.

### Claim 2 (depends on 1)

The gas distribution system of claim 1 further comprising a transfer tube in flow communication with the mixer and configured to collect the mixture;
an intake plenum in flow communication with the transfer tube and configured to distribute the mixture into a deposition chamber; and
an exhaust launder communicating with the deposition chamber and configured to collect and exhaust the mixture from the deposition chamber.

### Claim 3 (depends on 2)

The gas distribution system of claim 2 further comprising:
a cover plate located below the first and second reactant lines and the transfer tube, and having a passageway in flow communication with the intake plenum; and
a base plate located below the cover plate to form a flow path for the mixture to enter the deposition chamber.

### Claim 4 (depends on 1)

The gas distribution system of claim 1, wherein the upstream member comprises,
an inner mixing surface located parallel to a portion of the outer mixing surface,
a trough circumscribing the base and forming a transition surface between the inner and outer mixing surfaces, and
an inlet; and
wherein the mixer comprises a downstream member in flow communication with the upstream member and having a generally tapering inner surface, the inner and outer mixing surfaces, the trough, and the tapering inner surface together forming at least a portion of a chamber.

### Claim 5 (depends on 1)

The gas distribution system of claim 1 further comprising:
a first buffer line coupled to the first reactant line at a first coupling; and
a second buffer line coupled to the first reactant line at a second coupling, wherein a location of the first coupling is different than a location of the second coupling.

### Claim 6 (depends on 5)

The gas distribution system of claim 5, wherein the first coupling is located between the second coupling and the mixer such that the buffer gas entering the first reactant gas line from the first buffer line impedes the flow of the reactant gas through the first reactant gas line.

### Claim 7

A gas distribution system for use with an Atomic Layer Deposition (ALD) chamber, the gas distribution system comprising:
a first reactant line;
a second reactant line; and
a mixer communicating with the first and second reactant lines and a source of inert gas, and configured to form a mixture of a reactant gas from the second reactant line with a buffer gas from the first reactant line, the mixer comprising an upstream member having a base, a distal end located downstream of the base, and a first mixing surface located between the base and the distal end, the first mixing surface having a shape which causes circular flow of the reactant gas from the second reactant line and the buffer gas to form the mixture, wherein the upstream member comprises,
a second mixing surface located parallel to a portion of the first mixing surface,
a trough circumscribing the base and forming a transition surface between the first and second mixing surfaces, and
an inlet; and
wherein the mixer comprises a downstream member in flow communication with the upstream member and having a generally tapering inner surface, the first and second mixing surfaces, the trough, and the tapering inner surface together forming at least a portion of a chamber.