# US 8,784,559 B2 · Method and apparatus for continuous crystal growth

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- Number: US 8,784,559 B2
- Document ID: US8784559B2
- Status: Granted
- Kind: B2
- Application number: 12/878,326
- Filed: 2010-09-09
- Published: 2012-03-15
- Granted: 2014-07-22
- Earliest claimed: 2010-09-09
- Assignees: Siemens Medical Solutions USA, Inc.
- Applicants: James L. Corbeil; Troy Marlar; Piotr Szupryczynski
- Inventors: James L. Corbeil; Troy Marlar; Piotr Szupryczynski
- Web page: https://patentgrep.com/patent/US8784559B2

## CPC

- C30B 15/12: Double crucible methods
- C30B 15/02: adding crystallising materials or reactants forming it in situ to the melt
- C30B 33/02: Heat treatment (C30B33/04, C30B33/06 take precedence)
- C30B 35/005: {Transport systems}
- Y10T 117/1036: including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T 117/1072: including details of means providing product movement [e.g., shaft guides, servo means]
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace.

## Claims

### Claim 1

A crystal fabrication system for continuously growing multiple crystal boules utilizing the Czochralski (“CZ”) crystal growth process, comprising:
a furnace chamber capable of growing a plurality of crystal boules in a single thermal cycle thereof, including:
a crucible assembly retaining a heated crystal melt therein, and
a crystal growth rod assembly in communication with the crystal melt, capable of forming and drawing a crystal boule from the melt;
a cooling chamber directly coupled to the furnace chamber, capable of receiving and storing a plurality of crystal boules from the furnace chamber during a single thermal cycle of the furnace chamber; and
a boule transfer mechanism for transferring boules from the furnace chamber to the cooling chamber without the need to cool the furnace chamber prior to transfer; and
a slag discharge mechanism operatively coupled to the crucible assembly, enabling the crucible assembly to discharge slag therefrom.

### Claim 2 (depends on 1)

The system of claim 1, the cooling chamber further comprising a cooling temperature regulation system.

### Claim 3 (depends on 2)

The system of claim 2, wherein the cooling temperature regulation system decreases a cooling chamber temperature from proximal to distal the furnace chamber.

### Claim 4 (depends on 2)

The system of claim 2, wherein the cooling chamber further comprising a track for transporting boules therein from proximal to distal the furnace chamber.

### Claim 5 (depends on 4)

The system of claim 4, wherein the cooling temperature regulation system decreases cooling chamber temperature from proximal to distal the furnace chamber.

### Claim 6 (depends on 1)

The system of claim 1, the cooling chamber further comprising a track for transporting boules therein.

### Claim 7 (depends on 1)

The system of claim 1, further comprising a crystal aggregate supply coupled to the crucible assembly, enabling the crucible assembly to replenish heated crystal melt therein.

### Claim 8 (depends on 1)

The system of claim 1, wherein the crucible assembly further comprises an aggregate melt crucible in fluid communication with a crystal growth crucible.

### Claim 9 (depends on 1)

The system of claim 1, wherein the crucible assembly further comprises trunions coupled to the furnace chamber for tilting at least a portion thereof.

### Claim 10

A crystal fabrication system for continuously growing multiple crystal boules utilizing the Czochralski (“CZ”) crystal growth process, comprising:
a furnace chamber capable of growing a plurality of crystal boules in a single thermal cycle thereof, including:
a crucible assembly retaining a heated crystal melt therein, and
a crystal growth rod assembly in communication with the crystal melt, capable of forming and drawing a crystal boule from the melt;
a cooling chamber directly coupled to the furnace chamber, capable of receiving and storing a plurality of crystal boules from the furnace chamber during a single thermal cycle of the furnace chamber, the cooling chamber including a cooling temperature regulation system;
a boule transfer mechanism for transferring boules from the furnace chamber to the cooling chamber without the need to cool the furnace chamber prior to transfer; and
a crystal aggregate supply coupled to the crucible assembly, enabling the crucible assembly to replenish heated crystal melt therein.

### Claim 11 (depends on 10)

The system of claim 10, wherein the cooling temperature regulation system decreases cooling chamber temperature from proximal to distal the furnace chamber.

### Claim 12 (depends on 10)

The system of claim 10, the cooling chamber further comprising a track for transporting boules therein from proximal to distal the furnace chamber.

### Claim 13 (depends on 11)

The system of claim 11, wherein the cooling temperature regulation system decreases cooling chamber temperature from proximal to distal the furnace chamber.

### Claim 14 (depends on 10)

The system of claim 10, further comprising a slag discharge mechanism operatively coupled to the crucible assembly, enabling the crucible assembly to discharge slag therefrom.

### Claim 15 (depends on 10)

The system of claim 10, wherein the crucible assembly further comprises an aggregate melt crucible in fluid communication with a crystal growth crucible.

### Claim 16 (depends on 10)

The system of claim 10, wherein the crucible assembly further comprises trunions coupled to the furnace chamber for tilting a portion thereof.

### Claim 17

A method for continuously growing multiple crystal boules utilizing the Czochralski (“CZ”) crystal growth process, comprising:
growing a plurality of crystal boules in a furnace chamber during a single thermal cycle thereof, the chamber including:
a crucible assembly retaining a heated crystal melt therein, and
a crystal growth rod assembly in communication with the crystal melt, capable of forming and drawing a crystal bottle from the melt;
providing a cooling chamber directly coupled to the furnace chamber, capable of receiving and storing a plurality of crystal boules from the furnace chamber during a single thermal cycle of the furnace chamber;
transferring grown boules from the furnace chamber to the cooling chamber with a transfer mechanism without the need to cool the furnace chamber prior to transfer; and
enabling the crucible assembly to replenish heated crystal melt therein via a crystal aggregate supply coupled to the crucible assembly.

### Claim 18 (depends on 17)

The method of claim 17, further comprising regulating cooling temperature within the cooling chamber with a temperature regulation system.

### Claim 19 (depends on 18)

The method of claim 18, further comprising decreasing cooling chamber temperature from proximal to distal the furnace chamber with the cooling temperature regulation system.

### Claim 20 (depends on 19)

The method of claim 19, further comprising transporting the boules within the cooling chamber from proximal to distal the furnace chamber with a track.

### Claim 21 (depends on 17)

The method of claim 17, further comprising replenishing heated crystal melt in the crucible assembly during a single thermal cycle of the furnace chamber with a crystal aggregate supply coupled to the crucible assembly.

### Claim 22 (depends on 17)

The method of claim 17, further comprising discharging slag from the heated crystal melt in the crucible assembly during a single thermal cycle of the furnace chamber.

### Claim 23 (depends on 22)

The method of claim 22, wherein the slag discharging is performed by tilting at least a portion of the crucible assembly.