# US 8,784,159 B2 · Method for polishing semiconductor wafer

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- Number: US 8,784,159 B2
- Document ID: US8784159B2
- Status: Granted
- Kind: B2
- Application number: 13/502,879
- Filed: 2010-09-28
- Published: 2012-08-16
- Granted: 2014-07-22
- Earliest claimed: 2009-10-26
- Assignees: Sumco Corporation
- Applicants: Ryoya Terakawa; Kenji Aoki
- Inventors: Ryoya Terakawa; Kenji Aoki
- Web page: https://patentgrep.com/patent/US8784159B2

## CPC

- B24B 37/105: {the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement}
- B24B 37/042: {operating processes therefor}
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS

## Abstract

In a method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the table, at a time when the table and the work carrier both having been at rest are rotated, each at a predetermined number of revolutions, in a condition that the polishing cloth and the semiconductor wafer are pressed against each other, to thereby start polishing, a table acceleration is maintained smaller than a work carrier acceleration. By such maintaining the table acceleration smaller than the work carrier acceleration, vibrations to be generated when the polishing is started can be prevented. In the method for polishing a semiconductor wafer according to the present invention, the diameter of the semiconductor wafer is preferably defined to be 30% or more of the diameter of the table.

## Claims

### Claim 1

A semiconductor wafer polishing method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the table, wherein:
at a time when the table and the work carrier both having been at rest are rotated, each at a predetermined number of revolutions, in a condition that the polishing cloth and the semiconductor wafer are pressed against each other, to thereby start polishing, a table acceleration and a work carrier acceleration satisfy following expression (1);
A<B (1)
where the table acceleration is defined as A (mm/s2), and the work carrier acceleration is defined as B (mm/s2) and
wherein the diameter of the semiconductor wafer is in a range of 30% or more to less than 50% of the diameter of the table.

### Claim 2 (depends on 1)

The semiconductor wafer polishing method according to claim 1, wherein the predetermined number of revolutions of the work carrier is equal to that of the table.