# US 8,783,577 B2 · Semiconductor device and electronic device having the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,783,577 B2 - Document ID: US8783577B2 - Status: Granted - Kind: B2 - Application number: 11/885,634 - Filed: 2006-03-09 - Published: 2008-07-17 - Granted: 2014-07-22 - Earliest claimed: 2005-03-15 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Yukie Suzuki; Yasuyuki Arai; Shunpei Yamazaki - Inventors: Yukie Suzuki; Yasuyuki Arai; Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US8783577B2 ## CPC - H01Q 23/00: Antennas with active circuits or circuit elements integrated within them or attached to them - H10B 99/22: {including field-effect components} - H10D 86/01: Manufacture or treatment - H10D 86/0214: {using temporary substrates} - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10W 44/00: Electrical arrangements for controlling or matching impedance - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 90/00: Package configurations - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10P 72/7416: {used during dicing or grinding} - H10P 72/7426: {used as a support during build up manufacturing of active devices} - H10P 72/7438: {with parts of the auxiliary support remaining in the finished device} - H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer} - H10W 44/248: {for antennas} - H10W 72/01904: {using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates} - H10W 72/0198: {batch processes} - H10W 72/07302: {using an auxiliary member} - H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate} - H10W 72/07354: {changes in dispositions} - H10W 72/07355: {changes in materials} - H10W 72/074: {of anisotropic conductive adhesives} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/347: {Dispositions of multiple die-attach connectors} - H10W 72/351: {Materials of die-attach connectors} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/354: {comprising polymers} - H10W 72/944: {Dispositions of multiple bond pads} - H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape - H10W 90/722: {between stacked chips} - H10W 90/732: {between stacked chips} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/738: {between a chip and a stacked discrete passive device} - H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72) - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body. ## Claims ### Claim 1 A semiconductor device comprising: a first layer comprising a transistor; a first connection terminal connected with said transistor and provided on said first layer comprising said transistor; a second layer comprising a passive element selected from the group consisting of inductor, capacitor and resistor; a second connection terminal provided on a first surface of said second layer comprising said passive element; a third connection terminal provided on a second surface of said second layer provided opposite to said first surface; an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said first connection terminal with said second connection terminal by the conductive particle; an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and a connection layer electrically connecting said third connection terminal with said antenna, wherein the first conductive layer is formed on a first surface of the dielectric layer, wherein the second conductive layer is formed on a second surface of the dielectric layer, and wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer. ### Claim 2 (depends on 1) A device according to claim 1 wherein said first layer comprising said transistor has a thickness of 1 μm to 10 μm. ### Claim 3 (depends on 1) A device according to claim 1 wherein said first layer comprising said transistor has a thickness of 1 μm to 5 μm. ### Claim 4 (depends on 1) A device according to claim 1 wherein said first layer comprising said transistor is provided over a flexible insulating substrate. ### Claim 5 (depends on 4) A device according to claim 4 wherein said transistor comprises an organic semiconductor layer. ### Claim 6 (depends on 1) A device according to claim 1 wherein said first layer comprising said transistor is attached to a flexible insulating substrate through an organic resin. ### Claim 7 (depends on 1) A device according to claim 1 wherein said first layer comprising said transistor comprises lamination of plural layers each comprising a corresponding transistor. ### Claim 8 (depends on 1) A device according to claim 1 wherein said connection layer comprises another organic resin layer comprising another conductive particle. ### Claim 9 (depends on 1) A device according to claim 1 wherein said connection layer comprises a third conductive layer. ### Claim 10 (depends on 1) A device according to claim 1 wherein said semiconductor device comprises a high frequency circuit. ### Claim 11 (depends on 1) A device according to claim 1 wherein said semiconductor device comprises a microprocessor. ### Claim 12 (depends on 1) A device according to claim 1 wherein said semiconductor device comprises a sensor. ### Claim 13 (depends on 1) A device according to claim 1 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate. ### Claim 14 (depends on 1) A device according to claim 1 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and polyfumarate. ### Claim 15 (depends on 1) A device according to claim 1 wherein said layer comprising said transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit. ### Claim 16 (depends on 1) An electronic device comprising said semiconductor device according to claim 1. ### Claim 17 (depends on 16) A device according to claim 16 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key. ### Claim 18 (depends on 1) A device according to claim 1 wherein the transistor is a thin film transistor. ### Claim 19 A semiconductor device comprising: a first layer comprising a first transistor; a first connection terminal connected with said first transistor and provided on said first layer comprising said first transistor; a second layer comprising a second transistor; a second connection terminal provided on a first surface of said second layer comprising said second transistor; a third connection terminal provided on a second surface of said second layer opposite to said first surface; a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first connection terminal with said second connection terminal by the first conductive particle; an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said third connection terminal with said antenna by the second conductive particle, wherein the first conductive layer is formed on a first surface of the dielectric layer, wherein the second conductive layer is formed on a second surface of the dielectric layer, and wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer. ### Claim 20 (depends on 19) A device according to claim 19 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 10 μm. ### Claim 21 (depends on 19) A device according to claim 19 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 5 μm. ### Claim 22 (depends on 19) A device according to claim 19 wherein said first layer comprising said first transistor is provided over a flexible insulating substrate. ### Claim 23 (depends on 22) A device according to claim 22 wherein said first transistor comprises an organic semiconductor layer. ### Claim 24 (depends on 19) A device according to claim 19 wherein said first layer comprising said first transistor is attached to a flexible insulating substrate through an organic resin. ### Claim 25 (depends on 19) A device according to claim 19 wherein said semiconductor device comprises a high frequency circuit. ### Claim 26 (depends on 19) A device according to claim 19 wherein said semiconductor device comprises a microprocessor. ### Claim 27 (depends on 19) A device according to claim 19 wherein said semiconductor device comprises a sensor. ### Claim 28 (depends on 19) A device according to claim 19 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate. ### Claim 29 (depends on 19) A device according to claim 19 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate. ### Claim 30 (depends on 19) A device according to claim 19 wherein at least one of said first layer comprising said first transistor and said second layer comprising said second transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit. ### Claim 31 (depends on 19) An electronic device comprising said semiconductor device according to claim 19. ### Claim 32 (depends on 31) An electronic device according to claim 31 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key. ### Claim 33 (depends on 19) A device according to claim 19 wherein the transistor is a thin film transistor. ### Claim 34 A semiconductor device comprising: a first layer comprising a first transistor; a first connection terminal connected with said first transistor and provided on said first layer comprising said first transistor; a second layer comprising a second transistor; a second connection terminal provided on a first surface of said second layer comprising said second transistor; a third connection terminal provided on a second surface of said second layer opposite to said first surface; a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first connection terminal with said second connection terminal by the first conductive particle; a layer comprising a passive element selected from the group consisting of inductor, capacitor and resistor; a fourth connection terminal provided on a first surface of said layer comprising said passive element; a fifth connection terminal provided on a second surface of said layer comprising said passive element opposite to said first surface of said layer comprising said passive element; a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said third connection terminal with said fourth connection terminal by the second conductive particle; an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and a connection layer electrically connecting said fifth connection terminal with said antenna, wherein the first conductive layer is formed on a first surface of the dielectric layer, wherein the second conductive layer is formed on a second surface of the dielectric layer, and wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer. ### Claim 35 (depends on 34) A device according to claim 34 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 10 μm. ### Claim 36 (depends on 34) A device according to claim 34 wherein said first layer comprising said first transistor or said second layer comprising said second transistor has a thickness of 1 μm to 5 μm. ### Claim 37 (depends on 34) A device according to claim 34 wherein said first layer comprising said first transistor is provided over a flexible insulating substrate. ### Claim 38 (depends on 37) A device according to claim 37 wherein said first transistor comprises an organic semiconductor layer. ### Claim 39 (depends on 34) A device according to claim 34 wherein said first layer comprising said first transistor is attached to a flexible insulating substrate through an organic resin. ### Claim 40 (depends on 34) A device according to claim 34 wherein said connection layer comprises a third organic resin layer comprising a third conductive particle. ### Claim 41 (depends on 34) A device according to claim 34 wherein said connection layer comprises a third conductive layer. ### Claim 42 (depends on 34) A device according to claim 34 wherein said semiconductor device comprises a high frequency circuit. ### Claim 43 (depends on 34) A device according to claim 34 wherein said semiconductor device comprises a microprocessor. ### Claim 44 (depends on 34) A device according to claim 34 wherein said semiconductor device comprises a sensor. ### Claim 45 (depends on 34) A device according to claim 34 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate. ### Claim 46 (depends on 34) A device according to claim 34 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, bismaleimide triazine resin, vinylbenzyl, and polyfumarate. ### Claim 47 (depends on 34) A device according to claim 34 wherein at least one of said first layer comprising said first transistor and said second layer comprising said second transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit. ### Claim 48 (depends on 34) An electronic device comprising said semiconductor device according to claim 34. ### Claim 49 (depends on 48) A device according to claim 48 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device and an electronic key. ### Claim 50 (depends on 34) A device according to claim 34 wherein the transistor is a thin film transistor. ### Claim 51 A semiconductor device comprising: a layer comprising a first transistor and a second transistor and a first antenna connected with said first transistor; a connection terminal connected with said second transistor and provided on said layer comprising said first transistor and said second transistor and said first antenna; a second antenna comprising a power feeding laver, a first conductive layer and a second conductive layer functioning as a ground body, said second antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said connection terminal with said second antenna by the conductive particle, wherein the first conductive layer is formed on a first surface of the dielectric layer, wherein the second conductive layer is formed on a second surface of the dielectric layer, and wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer. ### Claim 52 (depends on 51) A device according to claim 51 wherein said layer comprising said first transistor and said second transistor and said first antenna is provided over a flexible insulating substrate. ### Claim 53 (depends on 52) A device according to claim 52 wherein each of said first transistor and said second transistor comprises an organic semiconductor layer. ### Claim 54 (depends on 51) A device according to claim 51 wherein said layer comprising said first transistor and said second transistor and said first antenna is attached to a flexible insulating substrate through an organic resin. ### Claim 55 (depends on 51) A device according to claim 51 wherein said semiconductor device comprises a high frequency circuit. ### Claim 56 (depends on 51) A device according to claim 51 wherein said semiconductor device comprises a microprocessor. ### Claim 57 (depends on 51) A device according to claim 51 wherein said semiconductor device comprises a sensor. ### Claim 58 (depends on 51) A device according to claim 51 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium-niobate, and lead zirconium titanate. ### Claim 59 (depends on 51) A device according to claim 51 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate. ### Claim 60 (depends on 51) A device according to claim 51 wherein said layer comprising said first transistor and said second transistor and said first antenna constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit. ### Claim 61 (depends on 51) An electronic device comprising said semiconductor device according to claim 51. ### Claim 62 (depends on 61) A device according to claim 61 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key. ### Claim 63 (depends on 51) A device according to claim 51 wherein the transistor is a thin film transistor. ### Claim 64 A semiconductor device comprising: a layer comprising a first transistor and a second transistor; a first connection terminal connected with said first transistor and provided on a first surface of said layer comprising said first transistor and said second transistor; a second connection terminal connected with said second transistor and provided on a second surface of said layer comprising said first transistor and said second transistor opposite to said first surface; a first antenna comprising a first power feeding layer, a first conductive layer and a second conductive layer functioning as a first ground body, said first antenna further comprising a first dielectric layer provided between said first conductive layer and said second conductive layer; a second antenna comprising a second power feeding layer, a third conductive layer and a fourth conductive layer functioning as a second ground body, said second antenna further comprising a second dielectric layer provided between said third conductive layer and said fourth conductive layer; a first organic resin layer comprising a first conductive particle dispersed in a first adhesive resin and connecting said first antenna with said first connection terminal by the first conductive particle; and a second organic resin layer comprising a second conductive particle dispersed in a second adhesive resin and connecting said second antenna with said second connection terminal by the second conductive particle, wherein the first conductive layer is formed on a first surface of the first dielectric layer, wherein the second conductive layer is formed on a second surface of the first dielectric layer, wherein the first power feeding layer is formed on a side, the first and the second surface of the first dielectric layer, wherein the third conductive layer is formed on a first surface of the second dielectric layer, wherein the fourth conductive layer is formed on a second surface of the second dielectric layer, wherein the second power feeding layer is formed on a side, the first and the second surface of the second dielectric layer. ### Claim 65 (depends on 64) A device according to claim 64 wherein said layer comprising said first transistor and said second transistor has a thickness of 1 μm to 10 μm. ### Claim 66 (depends on 64) A device according to claim 64 wherein said layer comprising said first transistor and said second transistor has a thickness of 1 μm to 5 μm. ### Claim 67 (depends on 64) A device according to claim 64 wherein said semiconductor device comprises a high frequency circuit. ### Claim 68 (depends on 64) A device according to claim 64 wherein said semiconductor device comprises a microprocessor. ### Claim 69 (depends on 64) A device according to claim 64 wherein said semiconductor device comprises a sensor. ### Claim 70 (depends on 64) A device according to claim 64 wherein each of said first dielectric layer and said second dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate. ### Claim 71 (depends on 64) A device according to claim 64 wherein each of said first dielectric layer and said second dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate. ### Claim 72 (depends on 64) A device according to claim 64 wherein said layer comprising said first transistor and said second transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit. ### Claim 73 (depends on 64) An electronic device comprising said semiconductor device according to claim 64. ### Claim 74 (depends on 64) A device according to claim 64 wherein the transistor is a thin film transistor. ### Claim 75 (depends on 73) A device according to claim 73 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key. ### Claim 76 A semiconductor device comprising: a layer comprising a transistor; a connection terminal connected with said transistor and provided on said layer comprising said transistor; an antenna comprising a power feeding layer, a first conductive layer and a second conductive layer functioning as a ground body, said antenna further comprising a dielectric layer provided between said first conductive layer and said second conductive layer; and an organic resin layer comprising a conductive particle dispersed in an adhesive resin and connecting said antenna with said connection terminal by the conductive particle, wherein the first conductive layer is formed on a first surface of the dielectric layer, wherein the second conductive layer is formed on a second surface of the dielectric layer, and wherein the power feeding layer is formed on a side, the first and the second surface of the dielectric layer. ### Claim 77 (depends on 76) A device according to claim 76 wherein said layer comprising said transistor has a thickness of 1 μm to 10 μm. ### Claim 78 (depends on 76) A device according to claim 76 wherein said layer comprising said transistor has a thickness of 1 μm to 5 μm. ### Claim 79 (depends on 76) A device according to claim 76 wherein said layer comprising said transistor is provided over a flexible insulating substrate. ### Claim 80 (depends on 79) A device according to claim 79 wherein said transistor comprises an organic semiconductor layer. ### Claim 81 (depends on 76) A device according to claim 76 wherein said layer comprising said transistor is attached to a flexible insulating substrate through an organic resin. ### Claim 82 (depends on 76) A device according to claim 76 wherein said layer comprising said transistor comprises lamination of plural layers each comprising a corresponding transistor. ### Claim 83 (depends on 76) A device according to claim 76 wherein said semiconductor device comprises a high frequency circuit. ### Claim 84 (depends on 76) A device according to claim 76 wherein said semiconductor device comprises a microprocessor. ### Claim 85 (depends on 76) A device according to claim 76 wherein said semiconductor device comprises a sensor. ### Claim 86 (depends on 76) A device according to claim 76 wherein said dielectric layer comprises a material selected from the group consisting of alumina, glass, forsterite, barium titanate, lead titanate, strontium titanate, lead zirconate, lithium niobate, and lead zirconium titanate. ### Claim 87 (depends on 76) A device according to claim 76 wherein said dielectric layer comprises a material selected from the group consisting of an epoxy resin, a phenol resin, a polybutadiene resin, a bismaleimide triazine resin, vinylbenzyl, and polyfumarate. ### Claim 88 (depends on 76) A device according to claim 76 wherein said layer comprising said transistor constitutes at least one of a power source circuit, a clock generation circuit and a data demodulation and modulation circuit. ### Claim 89 (depends on 76) An electronic device comprising said semiconductor device according to claim 76. ### Claim 90 (depends on 89) A device according to claim 89 wherein said electronic device is selected from the group consisting of a liquid crystal display device, an EL display device, a television device, a cellular phone, a printer, a camera, a personal computer, a goggle with earphones, a speaker device, a headphone, a navigation device, and an electronic key. ### Claim 91 (depends on 76) A device according to claim 76 wherein the transistor is a thin film transistor.