# US 8,782,889 B2 · Method for manufacturing a heat-dissipation unit including a heat-dissipation microstucture > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,782,889 B2 - Document ID: US8782889B2 - Status: Granted - Kind: B2 - Application number: 12/938,342 - Filed: 2010-11-02 - Published: 2011-06-23 - Granted: 2014-07-22 - Earliest claimed: 2009-12-18 - Assignees: Asia Vital Components Co., Ltd. - Applicants: Ying-Tung Chen - Inventors: Ying-Tung Chen - Web page: https://patentgrep.com/patent/US8782889B2 ## CPC - F28D 15/04: with tubes having a capillary structure - B22F 7/08: with one or more parts not made from powder {(B22F7/062 takes precedence)} - C22C 1/08: Alloys with open or closed pores - C23C 26/00: Coating not provided for in groups C23C2/00 - C23C24/00 - C23C 30/00: Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process (C23C26/00, C23C28/00 take precedence) - F28D 15/046: {characterised by the material or the construction of the capillary structure} - H10W 40/73: for cooling by change of state - F28F 2245/02: hydrophilic - Y10T 29/49353: Heat pipe device making - Y10T 29/49377: Tube with heat transfer means - F28D: HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT (fluid heaters having heat generating means and heat transferring means F24H; furnaces F27; details of heat-exchange apparatus of general) - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - C22C: ALLOYS (treatment of alloys C21D, C22F) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - F28F: DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION (water and air traps, air venting F16) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A heat-dissipation unit with heat-dissipation microstructure and method of manufacturing the same is disclosed. The heat-dissipation unit with heat-dissipation microstructure includes a main body internally defining a chamber; a wick structure formed on an inner surface of the chamber; and at least a SiO2 nano thin film coated on the wick structure. The SiO2 nano thin film is formed of a plurality of SiO2 nanograins, and is coated on the wick structure of the heat-dissipation unit through the sol-gel process. With the at least one layer of SiO2 nano thin film coated on the wick structure, it is able to upgrade the heat dissipation performance of the heat-dissipation unit. ## Claims ### Claim 1 A method of manufacturing heat-dissipation unit with heat-dissipation microstructure, comprising the steps of: providing a heat-dissipation unit that includes an internal chamber; forming a wick structure on an inner surface of the internal chamber of the heat-dissipation unit; coating the wick structure with an oxide nano thin film; drying the wick structure after the wick structure has been coated with the oxide nano thin film; sintering the wick structure after the wick structure has been coated with the oxide nano thin film and dried; after sintering the wick structure, providing a vacuum within the internal chamber of the heat-dissipation unit; and injecting a working fluid into the internal chamber of the heat-dissipation unit and sealing an open end of the heat-dissipation unit. ### Claim 2 (depends on 1) The method as claimed in claim 1, wherein the oxide nano thin film is formed of a material selected from the group consisting of Al203, SiO2, ZrO2, CaO, K20, TiO2, and ZnO. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein the coating of the wick structure is performed using a sol-gel process. ### Claim 4 (depends on 3) The method as claimed in claim 3, wherein the sol-gel process is performed using a method selected from a group of methods consisting of dip-coating deposition, settle-coating deposition, spin-coating deposition, spray-coating deposition, brush-coating deposition, and wet-coating deposition. ### Claim 5 (depends on 1) The method as claimed in claim 1, wherein the drying step is performed at a temperature ranged between 50° C. and 200° C. ### Claim 6 (depends on 1) The method as claimed in claim 1, wherein the sintering step is performed at a temperature ranged between 200° C. and 800° C. ### Claim 7 (depends on 1) The method as claimed in claim 1, wherein the wick structure is formed of a material selected from the group consisting of copper, aluminum, nickel and stainless steel. ### Claim 8 (depends on 1) The method as claimed in claim 1, wherein the working fluid is selected from the group consisting of deionized water, alcohol, and a coolant. ### Claim 9 (depends on 1) The method as claimed in claim 1, wherein, after the step of forming the wick structure on the inner surface of the internal chamber of the heat-dissipation unit, performing an oxidation-reduction process by supplying hydrogen into the internal chamber. ### Claim 10 (depends on 1) The method as claimed in claim 1, wherein the oxide nano thin film is selected from the group consisting of a metal oxide nano thin film and a semiconductor oxide nano thin film.