Semiconductor memory device and method of performing burn-in test on the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-beom Kang, Joon-hyung Lee
Life of this patent
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Abstract
A semiconductor memory device includes a cell array having a plurality of memory cells, each memory cell including a resistive element and a cell transistor between a bit line and a source line, and a source line voltage supply unit configured to supply, in a normal mode, a reference source line voltage to the source line, and in a test mode, a first source line voltage to the source line when data in a first state is recorded and a second source line voltage to the source line when data in a second state is recorded, the first source line voltage being lower than the reference source line voltage, and the second source line voltage being higher than the reference source line voltage.
Claims16
A semiconductor memory device, comprising:
- a cell array having a plurality of memory cells, each memory cell including a resistive element and a cell transistor between a bit line and a source line;
- and
- a source line voltage supply unit configured to supply a reference source line voltage, a first source line voltage, and a second source line voltage,
- wherein, in a normal mode, the source line voltage supply unit supplies the reference source line voltage to the source line,
- wherein, in a test mode, the source line voltage supply unit supplies the first source line voltage to the source line when data in a first state is recorded and the second source line voltage to the source line when data in a second state is recorded, and
- wherein the first source line voltage is lower than the reference source line voltage and the second source line voltage is higher than the reference source line voltage.
A method of performing a burn-in test on a semiconductor memory device having a cell array with a plurality of memory cells, each of the memory cells including a resistive element, the method comprising:
- entering a burn-in test mode in response to a test operation signal;
- selecting at least one memory cell of the cell array by using a burn-in test decoder;
- supplying a first source line voltage lower than a reference source line voltage to a source line, such that data in a first state is written to the at least one selected memory cell;
- and
- supplying a second source line voltage higher than the reference source line voltage to the source line, such that data in a second state is written to the at least one selected memory cell.
Dependencies are inferred from the claim text.