# US 8,772,922 B2 · Chip structure having redistribution layer

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- Number: US 8,772,922 B2
- Document ID: US8772922B2
- Status: Granted
- Kind: B2
- Application number: 13/349,051
- Filed: 2012-01-12
- Published: 2012-05-10
- Granted: 2014-07-08
- Earliest claimed: 2010-09-23
- Assignees: Siliconware Precision Industries Co., Ltd.
- Applicants: Hung-Yuan Hsu; Sui-An Kao
- Inventors: Hung-Yuan Hsu; Sui-An Kao
- Web page: https://patentgrep.com/patent/US8772922B2

## CPC

- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/656: Fan-in layouts
- H10W 70/66: Conductive materials thereof
- H10W 70/69: Insulating materials thereof
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A chip structure having a redistribution layer includes: a chip with electrode pads disposed on an active surface thereof; a first passivation layer formed on the active surface and the electrode pads; a redistribution layer formed on the first passivation layer and having a plurality of wiring units, wherein each of the wiring units has a conductive pad, a conductive via and a conductive trace connecting the conductive pad and the conductive via, the conductive trace having at least a first through opening for exposing a portion of the first passivation layer; and a second passivation layer disposed on the first passivation layer and the redistribution layer, the second passivation layer being filled in the first through opening such that the first and second passivation layers are bonded to each other with the conductive trace sandwiched therebetween, thereby preventing delamination of the conductive trace from the second passivation layer.

## Claims

### Claim 1

A chip structure having a redistribution layer, comprising:
a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface;
a first passivation layer formed on the active surface and the electrode pads and having a plurality of first openings for exposing the electrode pads, respectively;
the redistribution layer formed on the first passivation layer and having a plurality of wiring units, wherein each of the wiring units comprises a conductive pad, a conductive via disposed in one of the first openings and a conductive trace connecting the conductive pad and the conductive via, the conductive trace having at least a first through opening for exposing a portion of the first passivation layer; and
a second passivation layer formed on the first passivation layer and the redistribution layer and filled in the first through opening of the conductive trace of each of the wiring units and having a plurality of second openings for exposing the conductive pad of each of the wiring units,
wherein the redistribution layer is comprised of a seed layer and a metal layer disposed in sequence, and
the conductive trace has a widened portion and two elongated portions connecting the widened portion to the conductive pad and the conductive via, respectively, the first through opening being formed in the widened portion.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the at least a first through opening is of a polygonal shape, an elliptical shape, a circular shape or a plum blossom shape.

### Claim 3 (depends on 1)

The structure of claim 1, further comprising at least a second through opening formed in the elongated portion between the widened portion and the conductive via or formed in the elongated portion between the widened portion and the conductive pad.

### Claim 4 (depends on 3)

The structure of claim 3, wherein the at least second through opening is of a polygonal shape, an elliptical shape, a circular shape or a plum blossom shape.