# US 8,772,917 B2 · Semiconductor device having an antenna > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,917 B2 - Document ID: US8772917B2 - Status: Granted - Kind: B2 - Application number: 11/702,055 - Filed: 2007-02-05 - Published: 2007-08-16 - Granted: 2014-07-08 - Earliest claimed: 2006-02-10 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Tamae Takano; Nobuharu Ohsawa; Kiyoshi Kato - Inventors: Tamae Takano; Nobuharu Ohsawa; Kiyoshi Kato - Web page: https://patentgrep.com/patent/US8772917B2 ## CPC - H10D 86/80: characterised by multiple passive components, e.g. resistors, capacitors or inductors - G06K 19/07784: {the inductive antenna consisting of a plurality of coils stacked on top of one another} - G11C 7/062: {Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs} - G11C 7/22: Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management - H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package} - H01Q 1/36: Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence) - H01Q 9/27: Spiral antennas - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H10D 86/40: characterised by multiple TFTs - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/60: wherein the TFTs are in active matrices - H10D 88/00: Three-dimensional [3D] integrated devices - H10H 20/83: Electrodes - H10K 10/50: Bistable switching devices - H10K 50/11: characterised by the electroluminescent [EL] layers - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 70/65: Shapes or dispositions of interconnections - H01F 5/003: {Printed circuit coils} - H10K 19/10: comprising field-effect transistors - H10K 2102/311: {Flexible OLED} - H10W 44/241: {for passive devices or passive elements} - H10W 44/248: {for antennas} - Y10S 257/922: with means to prevent inspection of or tampering with an integrated circuit, e.g. "smart card", anti-tamper - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G06K: GRAPHICAL DATA READING (image or video recognition or understanding G06V); PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS - G11C: STATIC STORES (semiconductor memory devices H10B) - H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract When a conductive layer occupying a large area is provided in a coiled antenna portion, it has been difficult to supply power stably. A memory circuit portion and a coiled antenna portion are disposed by being stacked together; therefore, it is possible to prevent a current from flowing through a conductive layer occupying a large area included in the memory circuit portion, and thus, power saving can be achieved. In addition, the memory circuit portion and the coiled antenna portion are disposed by being stacked together, and thus, it is possible to use a space efficiently. Therefore, downsizing can be realized. ## Claims ### Claim 1 An RFID device comprising: a semiconductor circuit portion and a memory circuit portion side by side over a substrate having an insulating surface; and an antenna portion over the memory circuit portion, wherein the memory circuit portion comprises an entirety of memory elements comprised in said RFID device, each of said memory elements comprising a first electrode, a second electrode and a layer containing an organic compound interposed between the first electrode and the second electrode, wherein the memory circuit portion is electrically connected to the semiconductor circuit portion, wherein the memory circuit portion has a length and a width shorter than the length, wherein an entirety of the semiconductor circuit portion is surrounded by, but not directly overlapped with, the antenna portion when seen from a top of the RFID device, and wherein the antenna portion overlaps with an entirety of the length of the memory circuit portion. ### Claim 2 (depends on 1) An RFID device according to claim 1, wherein the antenna portion comprises a power feeding portion and a plurality of linear or stripe-shaped antenna conductors, and the antenna conductor is provided in spirals from a periphery of the power feeding portion toward the power feeding portion. ### Claim 3 (depends on 1) An RFID device according to claim 1, wherein the antenna portion comprises a conductive layer, and wherein the conductive layer is elliptical or circular. ### Claim 4 (depends on 1) An RFID device according to claim 1, wherein the substrate having the insulating surface is glass, plastic, or paper. ### Claim 5 An RFID device comprising: a semiconductor circuit portion and a memory circuit portion side by side over a substrate having an insulating surface; and an antenna portion over the memory circuit portion, wherein the memory circuit portion comprises an entirety of memory elements comprised in said RFID device, each of said memory elements comprising a first electrode, a second electrode and a layer containing an organic compound interposed between the first electrode and the second electrode, wherein the memory circuit portion is electrically connected to the semiconductor circuit portion, wherein the memory circuit portion has a length and a width shorter than the length, wherein an entirety of the semiconductor circuit portion is surrounded by, but not directly overlapped with, the antenna portion when seen from a top of the RFID device, wherein the antenna portion overlaps with an entirety of the length of the memory circuit portion, and wherein an area of the semiconductor circuit portion is larger than an area of the memory circuit portion. ### Claim 6 (depends on 5) An RFID device according to claim 5, wherein the antenna portion comprises a power feeding portion and a plurality of linear or stripe-shaped antenna conductors, and the antenna conductor is provided in spirals from a periphery of the power feeding portion toward the power feeding portion. ### Claim 7 (depends on 5) An RFID device according to claim 5, wherein the antenna portion comprises a conductive layer, and wherein the conductive layer is elliptical or circular. ### Claim 8 (depends on 5) An RFID device according to claim 5, wherein the substrate having the insulating surface is glass, plastic, or paper.