# US 8,772,911 B2 · Semiconductor diode and method for producing a semiconductor diode

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- Number: US 8,772,911 B2
- Document ID: US8772911B2
- Status: Granted
- Kind: B2
- Application number: 13/580,646
- Filed: 2011-02-10
- Published: 2012-12-20
- Granted: 2014-07-08
- Earliest claimed: 2010-02-22
- Assignees: OSRAM Opto Semiconductors GmbH
- Applicants: Tony Albrecht; Markus Maute; Martin Reufer; Heribert Zull
- Inventors: Tony Albrecht; Markus Maute; Martin Reufer; Heribert Zull
- Web page: https://patentgrep.com/patent/US8772911B2

## CPC

- H10H 20/831: characterised by their shape
- H10H 20/032: {of electrodes}
- H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.

## Claims

### Claim 1

A semiconductor diode comprising:
a semiconductor body having a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type having a doping,
wherein the second semiconductor layer has a vertical electrical via region which is connected to the first semiconductor layer and in which the doping is modified such that the electrical via region has the first conductivity type, and
wherein the electrical via region extends along the outer edges of the mesa lateral surfaces of the semiconductor body.

### Claim 2 (depends on 1)

The semiconductor diode as claimed in claim 1, wherein the first conductivity type corresponds to an n doping and the second conductivity type corresponds to a p-doping.

### Claim 3 (depends on 1)

The semiconductor diode as claimed in claim 1, wherein the first semiconductor layer is electrically contacted by way of the electrical via region and a first contact and wherein the second semiconductor layer is electrically contacted by a second contact.

### Claim 4 (depends on 1)

The semiconductor diode as claimed in claim 1, wherein the electrical via region is produced by locally damaging the doping in the second semiconductor layer.

### Claim 5 (depends on 1)

The semiconductor diode as claimed in claim 1, which is embodied as an optoelectronic diode.

### Claim 6 (depends on 1)

The semiconductor diode as claimed in claim 1, which is embodied as a thin-film semiconductor component.