# US 8,772,910 B2 · Doping carbon nanotubes and graphene for improving electronic mobility

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- Number: US 8,772,910 B2
- Document ID: US8772910B2
- Status: Granted
- Kind: B2
- Application number: 13/306,357
- Filed: 2011-11-29
- Published: 2013-05-30
- Granted: 2014-07-08
- Earliest claimed: 2011-11-29
- Assignees: International Business Machines Corporation
- Applicants: Ali Afzali-Ardakani; Bhupesh Chandra; George Stojan Tulevski
- Inventors: Ali Afzali-Ardakani; Bhupesh Chandra; George Stojan Tulevski
- Web page: https://patentgrep.com/patent/US8772910B2

## CPC

- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/481: {FETs having two-dimensional material channels, e.g. transition metal dichalcogenide [TMD] FETs}
- H10D 62/882: {Graphene}
- H10K 71/30: Doping active layers, e.g. electron transporting layers
- H10K 85/221: {Carbon nanotubes}
- H10K 10/484: {characterised by the channel regions}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A method and an apparatus for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device.

## Claims

### Claim 1

An apparatus, comprising:
a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate; and
contact metal disposed over the doped channel region of the graphene or nanotube thin-film field-effect transistor device.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the dopant comprises a mixture of at least one charge transfer doping compound in a solvent at a concentration in a range of 0.1 millimole (mM) to 100 mM.

### Claim 3 (depends on 2)

The apparatus of claim 2, wherein the at least one charge transfer doping compound comprises one of ruthenium bipyridyl complex and triethyloxonium hexachloro antimonate.

### Claim 4 (depends on 2)

The apparatus of claim 2, wherein the solvent comprises at least one of water, dichloroethane, alcohol, and dichlorobenzene.

### Claim 5

An apparatus, comprising:
contact metal; and
a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate and disposed over the contact metal, wherein a channel region of the graphene or nanotube thin-film field-effect transistor device is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.

### Claim 6 (depends on 5)

The apparatus of claim 5, wherein the dopant comprises a mixture of at least one charge transfer doping compound in a solvent at a concentration in a range of 0.1 millimole (mM) to 100 mM.

### Claim 7 (depends on 6)

The apparatus of claim 6, wherein the at least one charge transfer doping compound comprises one of ruthenium bipyridyl complex and triethyloxonium hexachloro antimonate.

### Claim 8 (depends on 6)

The apparatus of claim 6, wherein the solvent comprises at least one of water, dichloroethane, alcohol, and dichlorobenzene.