# US 8,772,904 B2 · Semiconductor structure and process thereof

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- Number: US 8,772,904 B2
- Document ID: US8772904B2
- Status: Granted
- Kind: B2
- Application number: 13/517,573
- Filed: 2012-06-13
- Published: 2013-12-19
- Granted: 2014-07-08
- Earliest claimed: 2012-06-13
- Assignees: United Microelectronics Corp.
- Applicants: Chih-Chien Liu; Chia-Lung Chang; Jei-Ming Chen; Jui-Min Lee; Yuh-Min Lin
- Inventors: Chih-Chien Liu; Chia-Lung Chang; Jei-Ming Chen; Jui-Min Lee; Yuh-Min Lin
- Web page: https://patentgrep.com/patent/US8772904B2

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.

## Claims

### Claim 1

A semiconductor structure located in a recess of a substrate, and the semiconductor structure comprising:
a liner located on the surface of the recess;
a silicon rich layer located on the liner, wherein the silicon rich layer comprises an oxygen-containing silicon rich layer and the oxygen content of the oxygen-containing silicon rich layer has a gradient distribution; and
a filling material located on the silicon rich layer and filling the recess.

### Claim 2 (depends on 1)

The semiconductor structure according to claim 1, wherein the liner comprises an oxide layer.

### Claim 3 (depends on 1)

The semiconductor structure according to claim 1, wherein the silicon rich layer comprises a silicon layer, a silicon nitride layer, a silicon oxide layer, a silicon oxynitride layer or a carbon-containing silicon nitride layer.

### Claim 4 (depends on 1)

The semiconductor structure according to claim 1, wherein the gradient distribution decreases from the contact surface between the filling material and the silicon rich layer to the contact surface between the silicon rich layer and the liner.

### Claim 5 (depends on 1)

The semiconductor structure according to claim 1, wherein the filling material comprises a silicon oxide.

### Claim 6 (depends on 1)

The semiconductor structure according to claim 1, wherein the liner protrudes from a top surface of the substrate.