# US 8,772,903 B2 · Semiconductor device with reduced potential between adjacent floating regions > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,903 B2 - Document ID: US8772903B2 - Status: Granted - Kind: B2 - Application number: 13/181,974 - Filed: 2011-07-13 - Published: 2012-07-05 - Granted: 2014-07-08 - Earliest claimed: 2010-12-29 - Assignees: Mitsubishi Electric Corporation - Applicants: Tomohide Terashima - Inventors: Tomohide Terashima - Web page: https://patentgrep.com/patent/US8772903B2 ## CPC - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 64/112: {comprising multiple field plate segments} - H10D 62/8303: {Diamond} - H10D 62/8325: {Silicon carbide} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes a plurality of floating regions, an insulating layer and a capacitance forming portion. The plurality of floating regions are arranged on a surface of a semiconductor substrate in a row, wherein the plurality of floating regions are provided with insulating regions therebetween. The plurality of floating regions include a first floating region and a second floating region. The second floating region is located farther than the first floating region from an island region of a predetermined potential on the semiconductor substrate. The insulating layer is interposed between each of the plurality of floating regions and a semiconductor material layer of the semiconductor substrate. The capacitance forming portion forms an external capacitance in parallel with the capacitance of the insulating region between the first floating region and the island region of the predetermined potential. ## Claims ### Claim 1 A semiconductor device comprising: a plurality of floating regions arranged on a surface of a semiconductor substrate in a row, wherein the plurality of floating regions are provided with insulating regions therebetween and include a first floating region and a second floating region located farther than the first floating region from an island region of a predetermined potential on the semiconductor substrate; an insulating layer interposed between each of the plurality of floating regions and a semiconductor material layer of the semiconductor substrate; and a capacitance forming portion forming a capacitance in parallel with, and in addition to, either the capacitance of the insulating region between the first floating region and the island region of the predetermined potential, or the capacitance of the insulating region between each adjacent pair of floating regions of the plurality of floating regions, or both, the adjacent pair of floating regions including the first floating region, wherein the capacitance forming portion includes a plurality of capacitive elements, the capacitive elements on the side of the capacitance forming portion adjacent the first floating region have a greater capacitance than the capacitive elements on the side of the capacitance forming portion adjacent the second floating region, and the capacitance forming portion includes a capacitive element of the capacitive elements connected at a first end to a one floating region of an adjacent pair of floating regions and at a second end to another floating region of the adjacent pair of floating regions. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein at least one of the plurality of capacitive elements is connected between each adjacent pair of floating regions, and the plurality of capacitive elements are arranged along the row of the plurality of floating regions and connected in series with one another. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, wherein the plurality of capacitive elements are arranged in the direction from the first floating region toward the second floating region, and the capacitances of the plurality of capacitive elements decrease as their distance from the first floating region increases. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein the capacitances of the plurality of capacitive elements decrease as a quadratic function of distance from the first floating region. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the floating regions are formed of wide bandgap semiconductor material. ### Claim 6 (depends on 3) The semiconductor device according to claim 3, wherein the capacitances of the plurality of capacitive elements decrease non-linearly with increasing distance from the first floating region. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the plurality of floating regions and the insulating layer are between the semiconductor material layer and the capacitance forming portion. ### Claim 8 (depends on 1) The semiconductor device of claim 1, wherein each of the plurality of capacitive elements includes a conductive plate arranged such that a line normal to the conductive plate is in the first direction. ### Claim 9 A semiconductor device comprising: a plurality of floating regions arranged on a surface of a semiconductor substrate in a row, wherein the plurality of floating regions are provided with insulating regions therebetween and include a first floating region and a second floating region located farther than the first floating region from an island region of a predetermined potential on the semiconductor substrate; an insulating layer interposed between each of the plurality of floating regions and a semiconductor material layer of the semiconductor substrate; and a capacitance forming portion extending either along and above the semiconductor substrate, or along a side of the row of the plurality of floating regions on the surface of the semiconductor substrate, or both, so that the capacitance forming portion is capacitively coupled to one or more of the plurality of floating regions, the one or more floating regions including the first floating region, wherein the capacitance forming portion forms a capacitance in parallel with, and in addition to, either a capacitance of the insulating region between the first floating region and the island region of the predetermined potential, or a capacitance of the insulating region between each adjacent pair of floating regions of the plurality of floating regions, or both, the capacitances between the capacitance forming portion and the floating regions decrease with increasing distance from the first floating region, and the capacitance forming portion includes an electrode provided on the semiconductor substrate and extending along and above the one or more floating regions so that the electrode is capacitively coupled to the one or more floating regions, such that the capacitive coupling of the electrode forms the capacitances between the capacitive forming portion and the floating regions. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, wherein the electrode extends from said first floating region toward the second floating region. ### Claim 11 (depends on 9) The semiconductor device according to claim 9, wherein the electrode extends from said first floating region toward the second floating region, and the width of the electrode decreases with increasing distance from the first floating region. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the width of the electrode decreases non-linearly with increasing distance from the first floating region. ### Claim 13 (depends on 9) The semiconductor device according to claim 9, wherein the plurality of floating regions and the insulating layer are between the semiconductor material layer and the capacitance forming portion. ### Claim 14 A semiconductor device comprising: a plurality of floating regions arranged on a surface of a semiconductor substrate in a row, wherein the plurality of floating regions are provided with insulating regions therebetween and include a first floating region and a second floating region located farther than the first floating region from an island region of a predetermined potential on the semiconductor substrate; an insulating layer interposed between each of the plurality of floating regions and a semiconductor material layer of the semiconductor substrate; and a capacitance forming portion extending either along and above the semiconductor substrate, or along a side of the row of the plurality of floating regions on the surface of the semiconductor substrate, or both, so that the capacitance forming portion is capacitively coupled to one or more of the plurality of floating regions, the one or more floating regions including the first floating region, wherein the capacitance forming portion forms a capacitance in parallel with, and in addition to, either a capacitance of the insulating region between the first floating region and the island region of the predetermined potential, or a capacitance of the insulating region between each adjacent pair of floating regions, or both, the capacitances between the capacitance forming portion and the floating regions decrease with increasing distance from the first floating region, and the capacitance forming portion includes a semiconductor region extending on the surface of the semiconductor substrate and along the row of the plurality of floating regions in such a manner that the semiconductor region extends along and adjacent to two or more of the plurality of floating regions with an insulating region between the semiconductor region and the two or more floating regions, such that a capacitive coupling of the semiconductor region with the one or more of the plurality of floating regions forms the capacitances between the capacitive forming portion and the floating regions. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein the capacitance forming portion includes one or more electrodes each provided to one of the one or more floating regions and extending from the floating region above the island region. ### Claim 16 (depends on 15) The semiconductor device according to claim 15, wherein: the capacitance forming portion includes a plurality of the one or more electrodes each extending along and above the semiconductor region; and the plurality of electrodes are arranged in the direction from the first floating region toward the second floating region, and extend a decreasing distance along and above the semiconductor region as the plurality of electrodes near the second floating region. ### Claim 17 A semiconductor device comprising: a plurality of floating regions arranged on a surface of a semiconductor substrate in a row, wherein the plurality of floating regions are provided with insulating regions therebetween and include a first floating region and a second floating region located farther than the first floating region from an island region of a predetermined potential on the semiconductor substrate; an insulating layer interposed between each of the plurality of floating regions and a semiconductor material layer of the semiconductor substrate; a capacitance forming portion forming a capacitance in parallel with, and in addition to, either the capacitance of the insulating region between the first floating region and the island region of the predetermined potential, or the capacitance of the insulating region between each adjacent pair of floating regions of the plurality of floating regions, or both, the adjacent pair of floating regions including the first floating region; and a semiconductor element provided on the surface of the semiconductor device and adjacent to the plurality of floating regions with an insulating region between the semiconductor element and the plurality of floating regions, the semiconductor element having a first conductivity type region on a side adjacent to the first floating region and having a second conductivity type region on a side adjacent to the second floating region, wherein the capacitance forming portion includes a plurality of capacitive elements, and the capacitive elements on the side of the capacitance forming portion adjacent the first floating region have a greater capacitance than the capacitive elements on the side of the capacitance forming portion adjacent the second floating region. ### Claim 18 (depends on 17) The semiconductor device according to claim 17, wherein the semiconductor element further includes a diode having a n-type region on the side adjacent to the first floating region and a p-type region on the side adjacent to the second floating region.