# US 8,772,899 B2 · Method and apparatus for backside illumination sensor

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- Number: US 8,772,899 B2
- Document ID: US8772899B2
- Status: Granted
- Kind: B2
- Application number: 13/409,924
- Filed: 2012-03-01
- Published: 2013-09-05
- Granted: 2014-07-08
- Earliest claimed: 2012-03-01
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Shiu-Ko JangJian; Min Hao Hong; Kei-Wei Chen; Ying-Lang Wang
- Inventors: Shiu-Ko JangJian; Min Hao Hong; Kei-Wei Chen; Ying-Lang Wang
- Web page: https://patentgrep.com/patent/US8772899B2

## CPC

- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/026: {Wafer-level processing}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

## Claims

### Claim 1

A backside illuminated (BSI) sensor device, comprising:
a substrate with a front side and a backside;
a photosensitive diode within the substrate, the photosensitive diode being positioned along the front side of the substrate; and
a B doped Epi-Si(Ge) layer on a surface of the backside of the substrate, wherein the B doped Epi-Si(Ge) layer comprises silicon and germanium.

### Claim 2 (depends on 1)

The BSI sensor device of claim 1, wherein the B doped Epi-Si(Ge) layer is of thickness in a range about 100 to 700 Å.

### Claim 3 (depends on 1)

The BSI sensor device of claim 1, further comprising an isolation area within the substrate.

### Claim 4 (depends on 1)

The BSI sensor device of claim 1, wherein the photosensitive diode is a pinned layer photodiode comprising a p-n-p junction.

### Claim 5 (depends on 1)

The BSI sensor device of claim 1, further comprising a metal shield layer on the B doped Epi-Si(Ge) layer.

### Claim 6 (depends on 1)

The BSI sensor device of claim 1, further comprising a dielectric layer on the B doped Epi-Si(Ge) layer.

### Claim 7 (depends on 1)

The BSI sensor device of claim 1, further comprising a micro-lens on the B doped Epi-Si(Ge) layer.

### Claim 8 (depends on 1)

The BSI sensor device of claim 1, further comprising a color filter on the B doped Epi-Si(Ge) layer.

### Claim 9 (depends on 1)

The BSI sensor device of claim 1, further comprising a transistor on a surface of the front side of the substrate.

### Claim 10 (depends on 1)

The BSI sensor device of claim 1, further comprising a passivation layer on a surface of the front side of the substrate.

### Claim 11 (depends on 1)

The BSI sensor device of claim 1, further comprising an inter-layer dielectric (ILD) layer on a surface of the front side of the substrate.

### Claim 12

A backside illuminated (BSI) sensor device, comprising:
a pixel array in a substrate, wherein the substrate has a front side and a backside, and wherein the substrate comprises a plurality of photosensitive diodes of the pixel array, the photosensitive diodes being positioned in the front side of the substrate;
a B doped Epi-Si(Ge) layer on a surface of the backside of the substrate, wherein the B doped Epi-Si(Ge) layer comprises silicon and germanium;
a metal shield layer on the B doped Epi-Si(Ge) layer;
a dielectric layer on the metal shield layer;
a micro-lens layer on the B doped Epi-Si(Ge) layer; and
a color filter on the micro-lens layer.

### Claim 13 (depends on 12)

The BSI sensor device of claim 12, further comprising an isolation area within the substrate.

### Claim 14 (depends on 12)

The BSI sensor device of claim 12, wherein a photosensitive diode of the plurality of photosensitive diodes of the pixel array is a pinned layer photodiode comprising a p-n-p junction.

### Claim 15 (depends on 12)

The BSI sensor device of claim 12, wherein the B doped Epi-Si(Ge) layer is of thickness in a range about 100 to 700 Å.

### Claim 16 (depends on 12)

The BSI sensor device of claim 12, further comprising a transistor on a surface of the front side of the substrate.

### Claim 17 (depends on 16)

The BSI sensor device of claim 16, further comprising a passivation layer on the front side of the substrate.

### Claim 18

A backside illuminated (BSI) sensor device, comprising:
a pixel array in a front side of a substrate, wherein the substrate comprises a plurality of photosensitive diodes of the pixel array, a photosensitive diode of the plurality of photosensitive diodes of the pixel array is a pinned layer photodiode comprising a p-n-p junction;
a B doped Epi-Si(Ge) layer on a surface of a backside of the substrate, wherein the B doped Epi-Si(Ge) layer is an epitaxial layer comprising silicon and germanium;
a metal shield layer on the B doped Epi-Si(Ge) layer;
a dielectric layer on the metal shield layer;
a micro-lens layer on the B doped Epi-Si(Ge) layer; and
a color filter on the micro-lens layer.

### Claim 19 (depends on 18)

The BSI sensor device of claim 18, further comprising an isolation area within the substrate.

### Claim 20 (depends on 18)

The BSI sensor device of claim 18, wherein the B doped Epi-Si(Ge) layer is of thickness in a range about 100 to 700 Å.