# US 8,772,883 B2 · Sealed cavity and method for producing such a sealed cavity > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,883 B2 - Document ID: US8772883B2 - Status: Granted - Kind: B2 - Application number: 13/381,241 - Filed: 2010-07-06 - Published: 2012-05-10 - Granted: 2014-07-08 - Earliest claimed: 2009-07-07 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives - Applicants: Jean-Louis Pornin; Fabrice Jacquet - Inventors: Jean-Louis Pornin; Fabrice Jacquet - Web page: https://patentgrep.com/patent/US8772883B2 ## CPC - B81C 1/00285: {using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters} - B81B 2203/0384: sloped profile - B81C 2203/0136: Growing or depositing of a covering layer - B81C 2203/0145: Hermetically sealing an opening in the lid - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract A method for producing a sealed cavity, including: a) producing a sacrificial layer on a substrate; b) producing a cover layer covering at least the sacrificial layer and a portion of the face of the substrate not covered by the sacrificial layer, the cover layer including lateral flanks forming, with the substrate, an angle of less than 90°; c) producing a hole through one of the lateral flanks of the cover layer such that a maximum distance between the substrate and an edge of the hole is less than approximately 3 μm, the hole crossing a portion of the cover layer deposited on a portion of the substrate not covered by the sacrificial layer; d) eliminating the sacrificial layer through the hole, forming the cavity; and e) depositing at least one material plugging the hole in a sealed fashion. ## Claims ### Claim 1 A method for production of at least one sealed cavity, comprising: producing a sacrificial layer on a first portion of a face of a substrate; producing a cover layer covering at least the sacrificial layer and a second portion of the face of the substrate not covered by the sacrificial layer and adjacent to the first portion of the face of the substrate covered by the sacrificial layer, the cover layer including lateral flanks forming, with the first portion of the face of the substrate covered by the sacrificial layer, at least an angle of less than 90°; producing at least one hole through at least one of the lateral flanks of the cover layer such that all edges of the hole are delimited entirely by the cover layer, and such that a maximum distance, along an axis perpendicular to the face of the substrate, between the face of the substrate and at least an edge of the hole located on a side of a face of the cover layer positioned against the sacrificial layer, is less than approximately 3 μm, the hole crossing a portion of the cover layer positioned on the second portion of the face of the substrate which is not covered by the sacrificial layer; eliminating the sacrificial layer through the hole so as to form the cavity; and depositing at least one material plugging the hole thereby sealing the cavity. ### Claim 2 (depends on 1) The method according to claim 1, wherein an uppermost portion of the cover layer is kept without holes. ### Claim 3 (depends on 1) The method according to claim 1, wherein the angle formed by the lateral flanks of the cover layer with the first portion of the face of the substrate covered by the sacrificial layer is between approximately 5° and 30°. ### Claim 4 (depends on 1) The method according to claim 1, wherein a maximum thickness of the sacrificial layer is between approximately 0.5 μm and 1 μm and the angle formed by the lateral flanks of the cover layer with the first portion of the face of the substrate covered by the sacrificial layer is between approximately 45° and 90°. ### Claim 5 (depends on 1) The method according to claim 1, wherein the maximum distance, along the axis perpendicular to the face of the substrate, between the face of the substrate and the edge of the hole is between approximately 1 μm and 3 μm. ### Claim 6 (depends on 1) The method according to claim 1, wherein producing the cover layer includes implementing, after producing the sacrificial layer, a shaping of the sacrificial layer such that lateral flanks of the sacrificial layer form, with the portion of the face of the substrate covered by the sacrificial layer, the angle of less than 90°, followed by a conformal depositing of the cover layer at least on the sacrificial layer. ### Claim 7 (depends on 1) The method according to claim 1, wherein the hole includes, in a plane of the face of the cover layer positioned against the sacrificial layer, a section of dimensions less than a section of dimensions of a section of the hole in a plane of a second face of the cover layer opposite the face positioned against the sacrificial layer. ### Claim 8 (depends on 1) The method according to claim 1, wherein depositing the material plugging the hole in sealed fashion is implemented under a pressure of between approximately 1.10−3 mbar and 900 mbar or under vacuum. ### Claim 9 (depends on 1) The method according to claim 1, wherein depositing the at least one material plugging the hole includes implementing a first depositing of at least a first material partially plugging the hole, and a second depositing of at least a second material covering the first material at least partly, and sealingly plugging the hole. ### Claim 10 (depends on 1) The method according to claim 1, wherein the hole includes, in a plane of a face of the cover layer, a section of circular or oblong shape. ### Claim 11 (depends on 1) The method according to claim 1, wherein, prior to producing a sacrificial layer, a microelectronic device is produced on or in the first portion of the face of the substrate to be covered by the sacrificial layer, and wherein the microelectronic device is sealingly encapsulated in the cavity after the depositing of the at least one material plugging the hole in thereby sealing the cavity. ### Claim 12 (depends on 11) The method according to claim 11, wherein the microelectronic device is of MEMS type. ### Claim 13 (depends on 1) The method according to claim 1, wherein the cavity forms a channel for passage of liquid or gaseous fluids. ### Claim 14 An apparatus comprising: a sealed cavity; at least one cover layer positioned on a face of a substrate so as to form the cavity, the cover layer covering at least a second portion of the face of the substrate which is not positioned in the cavity and adjacent to a first portion of the face of the substrate positioned in the cavity, the cover layer including lateral flanks forming, with the first portion of the face of the substrate positioned in the cavity, at least an angle of less than 90°; and at least one hole disposed through at least one of the lateral flanks of the cover layer such that all edges of the hole are delimited entirely by the cover layer and such that a maximum distance, along an axis perpendicular to the face of the substrate, between the face of the substrate and at least one edge of the hole located on a side of a face of the cover layer forming a wall of the cavity, is less than approximately 3 μm, wherein the hole crosses a portion of the cover layer deposited on the second portion of the face of the substrate which is not positioned in the cavity, and wherein at least one material plugs the hole thereby sealing the cavity. ### Claim 15 (depends on 14) The cavity according to claim 14, wherein an uppermost portion of the cover layer does not have a hole therethrough. ### Claim 16 (depends on 14) The cavity according to claim 14, wherein the angle formed by the lateral flanks of the cover layer with the first portion of the face of the substrate positioned in the cavity is between approximately 5° and 30°. ### Claim 17 (depends on 15) The cavity according to claim 15, wherein a distance between the uppermost portion of the cover layer and the substrate is between approximately 0.5 μm and 1 μm, and wherein the angle formed by the lateral flanks of the cover layer with the first portion of the face of the substrate positioned in the cavity is between approximately 45° and 90°. ### Claim 18 (depends on 14) The cavity according to claim 14, wherein at least one microelectronic device is sealingly encapsulated in the cavity. ### Claim 19 (depends on 14) The cavity according to claim 14, where the cavity forms a channel for passage of liquid or gaseous fluids.