# US 8,772,875 B2 · Semiconductor on glass substrate with stiffening layer

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- Number: US 8,772,875 B2
- Document ID: US8772875B2
- Status: Granted
- Kind: B2
- Application number: 13/973,562
- Filed: 2013-08-22
- Published: 2013-12-26
- Granted: 2014-07-08
- Earliest claimed: 2010-06-30
- Assignees: Corning Incorporated; Soitec
- Applicants: Corning Incorporated
- Inventors: Nadia Ben Mohamed; Ta-ko Chuang; Jeffrey Scott Cites; Daniel Delprat; Alexander Usenko
- Web page: https://patentgrep.com/patent/US8772875B2

## CPC

- H10D 62/00: Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10P 10/12: {Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914)}
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

## Claims

### Claim 1

A semiconductor on glass structure, comprising:
a glass substrate having a first Young's modulus;
a stiffening layer having a second Young's modulus;
an oxide layer on the stiffening layer; and
a semiconductor layer on the oxide layer, the semiconductor layer having a predetermined surface roughness.

### Claim 2 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the stiffening layer has a Young's modulus of about 125 GPa or higher.

### Claim 3 (depends on 2)

The semiconductor on glass structure of claim 2 wherein the stiffening layer has a Young's modulus of about 150 GPa or higher.

### Claim 4 (depends on 3)

The semiconductor on glass structure of claim 3 wherein the stiffening layer has a Young's modulus of about 200 GPa or higher.

### Claim 5 (depends on 1)

The semiconductor on glass sturcture of claim 1 wherein the semiconductor layer has a surface roughness with a skewness level of about 0.6 or lower.

### Claim 6 (depends on 1)

The semiconductor on glass structure of claim 1 wherein an exposed surface of the semiconductor layer has a surface roughness with a skewness level of about 0.4 or lower.

### Claim 7 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the stiffening layer has a thickness about 50 nm or greater.

### Claim 8 (depends on 4)

The semiconductor on glass structure of claim 4 wherein the stiffening layer is formed of Silicon Nitride.

### Claim 9 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the oxide layer is formed of Silicon oxide.

### Claim 10 (depends on 9)

The semicondutor on glass structure of claim 9 wherein the oxide layer has a thickness of about 2 nm to about 150 nm.

### Claim 11 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the glass substrate further comprises:
(i) a first glass layer adjacent to the stiffening layer in which substantially no modifier positive ions are present, and
(ii) a second glass layer adjacent the first glass layer having an enhanced concentration of modifier positive ions.

### Claim 12 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the stiffening layer has a thickness of about 100 nm or greater.

### Claim 13 (depends on 12)

The semiconductor on glass structure of claim 12 wherein the stiffening layer has a thickness of about 250 nm or greater.

### Claim 14 (depends on 13)

The semiconductor on glass structure of claim 13 wherein the stiffening layer has a thickness of about 350 nm or greater.

### Claim 15 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the oxide layer has a thickness of about 5 nm to about 150 nm.

### Claim 16 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the oxide layer has a thickness of about 2 nm to about 20 nm.

### Claim 17 (depends on 16)

The semiconductor on glass structure of claim 16 wherein the oxide layer has a thickness of about 5 nm to about 10 nm.

### Claim 18 (depends on 12)

The semiconductor on glass structure of claim 12 wherein the surface of the stiffening layer is hydrophilic.

### Claim 19 (depends on 1)

The semiconductor on glass structure of claim 1 wherein the semiconductor layer is formed from of silicon (Si), germanium-doped silicon (SiGe), silicon carbide (SiC), germanium (Ge), gallium arsenide (GaAs), GaP, or InP.