# US 8,772,847 B2 · Semiconductor device and method for producing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,847 B2 - Document ID: US8772847B2 - Status: Granted - Kind: B2 - Application number: 13/687,715 - Filed: 2012-11-28 - Published: 2013-07-04 - Granted: 2014-07-08 - Earliest claimed: 2011-12-28 - Assignees: Fujitsu Semiconductor Limited - Applicants: Fujitsu Semiconductor Limited - Inventors: Naoya Sashida - Web page: https://patentgrep.com/patent/US8772847B2 ## CPC - H10D 1/692: {Electrodes} - H10B 53/40: characterised by the peripheral circuit region - H10D 1/682: {having dielectrics comprising perovskite structures} - H10D 89/10: Integrated device layouts - H10W 20/037: {the barrier, adhesion or liner layers being on top of a main fill metal} - H10W 20/048: {by using plasmas or gaseous environments, e.g. by nitriding} - H10W 20/096: {by contacting with gases, liquids or plasmas} - H10W 20/42: Vias, e.g. via plugs - H10W 20/081: {by forming openings in the dielectric parts} - H10W 20/097: {by thermally treating} - H10W 20/425: {Barrier, adhesion or liner layers} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a semiconductor substrate; a first insulating film that is formed over the semiconductor substrate; a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view; and a conductor plug that is formed in the hole and contains tungsten. ## Claims ### Claim 1 A semiconductor device comprising: a semiconductor substrate; a first insulating film that is formed over the semiconductor substrate; a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view; and a conductor plug that is formed in the hole and contains tungsten. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the center of gravity of the hole and the center of gravity of the upper electrode coincide with each other in plan view. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the shape of the hole is similar to the shape of the upper electrode in plan view. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the hole is larger than a lower surface of the upper electrode in plan view. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the conductor plug includes a tungsten film having a recess in an upper surface of the tungsten film, and a copper wiring is formed in the recess. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, further comprising: a third insulating film that is formed over the second insulating film and has a wiring groove on the hole, the wiring groove being continuous to the recess, wherein the copper wiring is formed in the recess and the wiring groove. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein the wiring groove has a width larger than a width of the recess. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, further comprising: an opening that is formed in the first insulating film under the capacitor and includes the entire region of the lower electrode in plan view, and a conductor that contains tungsten and is embedded in the fast opening. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, further comprising: an element isolation insulating film that is formed in the semiconductor substrate, wherein the opening is formed on the element isolation insulating film. ### Claim 10 (depends on 8) The semiconductor device according to claim 8, further comprising: an antioxidation insulating film that is formed over the conductor and the first insulating film and suppresses oxidation of the conductor, and, wherein the capacitor is formed on the antioxidation insulating film. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, further comprising: an impurity diffusion region that is formed in the semiconductor substrate; a contact plug that is embedded in the first insulating film over the impurity diffusion region and is electrically connected to the impurity diffusion region; an interlayer insulating film that is formed over the first insulating film and has an opening on the contact plug, the opening including the entire region of the lower electrode in plan view; and a conductor that is embedded in the opening, the conductor containing tungsten and being electrically connected to the contact plug and the lower electrode of the capacitor which is formed on the conductor. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, further comprising: a conductive film that is formed on the conductor so to fill the opening, wherein the conductor is formed up to a halfway position of the opening in a depth direction, and the capacitor is formed on the conductive film. ### Claim 13 (depends on 12) The semiconductor device according to claim 12, wherein the conductive film has a first upper surface right under the capacitor, a side face that is connected to the first upper surface and is flush with a side face of the lower electrode, and a second upper surface connected to the side face and extending in a parallel to a surface of the substrate. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, wherein a plurality of the capacitors and a plurality of the conductor plugs are provided, and a radioactive ray coming toward the capacitor dielectric film right under the upper electrode of one of the capacitors is blocked by the conductor plug on the other capacitor. ### Claim 15 (depends on 14) The semiconductor device according to claim 14, wherein among radiation that is incident on the capacitor dielectric film without being blocked by the conductor plug on the other capacitor, the radiation having the maximum incident angle has a tangent of the incident angle, the tangent being equal to a value (a−d)/(2(b−e)), where a represents a distance between lower surfaces of the upper electrodes of adjacent capacitors, b represents a distance between the lower surface of the upper electrode and an upper surface of the conductor plug, d represents a distance between lower surfaces of adjacent conductor plugs, and e represents a distance between the upper surface and the lower surface of the conductor plug. ### Claim 16 (depends on 15) The semiconductor device according to claim 15, wherein the tangent is represented by (c+d)/(2e) where c represents a distance between the upper surfaces of the adjacent conductor plugs. ### Claim 17 (depends on 1) The semiconductor device according to claim 1, wherein another conductor plug containing tungsten is provided in the second insulating film on a side of the capacitor, and radiation coming toward the capacitor dielectric film right under the upper electrode is blocked by the another conductor plug. ### Claim 18 (depends on 1) The semiconductor device according to claim 1, further comprising: a blocking body formed above the second insulating film and containing tungsten, wherein radiation coming toward the capacitor dielectric film right under the upper electrode is blocked by the blocking body. ### Claim 19 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor substrate has a cell region where a plurality of the capacitors are formed, and a conductor ring containing tungsten, the conductor ring having a height at least reaching the upper surface of the second insulating film and surrounding the cell region in plan view, is provided on the semiconductor substrate. ### Claim 20 A method for producing a semiconductor device comprising: forming a first insulating film on a semiconductor substrate; forming, on the first insulating film, a capacitor by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; forming a second insulating film that covers the capacitor; forming a hole in the second insulating film by pattering the second insulating film, the hole including the entire region of the upper electrode in plan view; and forming, in the hole, a conductor plug that is electrically connected to the upper electrode and that contains tungsten.