# US 8,772,846 B2 · Magnetic tunneling junction devices, memories, memory systems, and electronic devices

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,846 B2
- Document ID: US8772846B2
- Status: Granted
- Kind: B2
- Application number: 13/398,640
- Filed: 2012-02-16
- Published: 2013-02-14
- Granted: 2014-07-08
- Earliest claimed: 2011-08-10
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Jeong Heon Park; Woo Chang Lim; Sechung Oh; Young Hyun Kim; Sang Hwan Park; Jang Eun Lee
- Inventors: Jeong Heon Park; Woo Chang Lim; Sechung Oh; Young Hyun Kim; Sang Hwan Park; Jang Eun Lee
- Web page: https://patentgrep.com/patent/US8772846B2

## CPC

- H10N 50/10: Magnetoresistive devices
- G06F 13/16: for access to memory bus (G06F13/28 takes precedence)
- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1659: {Cell access}
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

## Claims

### Claim 1

A magnetic tunneling junction device comprising:
a first structure including a magnetic layer;
a second structure including
at least two extrinsic perpendicular magnetization structures, each including
a magnetic layer and;
a perpendicular magnetization inducing layer on the magnetic layer; and
a tunnel barrier between the first and second structures.

### Claim 2 (depends on 1)

The magnetic tunneling junction of claim 1, the second structure further including
additional extrinsic perpendicular magnetization structures, each including
a magnetic layer and;
a perpendicular magnetization inducing layer on the magnetic layer.

### Claim 3 (depends on 1)

The magnetic tunneling junction of claim 1, further comprising:
a perpendicular magnetization preserving layer on one of the perpendicular magnetization inducing layers.

### Claim 4 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein each magnetic layer has an oxygen affinity less than each perpendicular magnetization inducing layer.

### Claim 5 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein each perpendicular magnetization preserving layer has an oxygen affinity less than each perpendicular magnetization inducing layer.

### Claim 6 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the magnetic layers are made of a ferromagnetic material.

### Claim 7 (depends on 6)

The magnetic tunneling junction device of claim 6, wherein the ferromagnetic material is at least one of CoFeB, CoFe, NiFe, CoFePt, CoFePd, CoFeCr, CoFeTb, CoFeGd or CoFeNi.

### Claim 8 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the magnetic layers have a thickness in a range of about 1 angstrom to about 30 angstroms.

### Claim 9 (depends on 8)

The magnetic tunneling junction device of claim 8, wherein the magnetic layers have a thickness in a range of about 3 angstroms to about 17 angstroms.

### Claim 10 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization inducing layers are in direct contact with the magnetic layers.

### Claim 11 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization inducing layers are an oxygen-containing material.

### Claim 12 (depends on 11)

The magnetic tunneling junction device of claim 11, wherein the perpendicular magnetization inducing layers are a metal oxide.

### Claim 13 (depends on 12)

The magnetic tunneling junction device of claim 12, wherein the metal oxide is at least one of magnesium oxide, tantalum oxide, titanium oxide, aluminum oxide, magnesium zinc oxide, hafnium oxide, or magnesium boron oxide.

### Claim 14 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization inducing layers include at least one of Ta, Ti, U, Ba, Zr, Al, Sr, Hf, La, Ce, Sm, Mg, Th, Ca, Sc, or Y.

### Claim 15 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization inducing layers have an electrical resistivity higher than the magnetic layers or the perpendicular magnetization preserving layer.

### Claim 16 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization inducing layers have a thickness less than the magnetic layers or the perpendicular magnetization preserving layer.

### Claim 17 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization preserving layer has an electrical resistivity lower than the perpendicular magnetization inducing layers.

### Claim 18 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization preserving layer is formed of at least one noble metal or copper.

### Claim 19 (depends on 18)

The magnetic tunneling junction device of claim 18, wherein the at least one noble metal includes ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), iridium (Ir), platinum (Pt), or gold (Au).

### Claim 20 (depends on 3)

The magnetic tunneling junction device of claim 3, wherein the perpendicular magnetization preserving layer is formed of at least one of material having an electrical resistivity lower than tantalum or titanium.

### Claim 21 (depends on 3)

The magnetic tunneling junction device of claim 3, further comprising:
a substrate;
wherein the first structure is a lower structure closer to the substrate and the wherein the second structure is an upper structure further from the substrate.

### Claim 22 (depends on 21)

The magnetic tunneling junction device of claim 21, wherein the magnetic layers of the second structure are free magnetic layers.

### Claim 23 (depends on 21)

The magnetic tunneling junction device of claim 21, the first structure including fixed magnetic layers.

### Claim 24 (depends on 21)

The magnetic tunneling junction device of claim 21, further comprising:
a top electrode on the perpendicular magnetization preserving layer.

### Claim 25 (depends on 3)

The magnetic tunneling junction device of claim 3, further comprising:
a substrate;
wherein the first structure is an upper structure further from the substrate and the wherein the second structure is a lower structure closer to the substrate.

### Claim 26 (depends on 25)

The magnetic tunneling junction device of claim 25, the first structure including
at least two extrinsic perpendicular magnetization structures, each including
a magnetic layer and
a perpendicular magnetization inducing layer on the magnetic layer,
a metal layer between two of the perpendicular magnetization inducing layer, and
a perpendicular magnetization preserving layer on one of the perpendicular magnetization inducing layers.

### Claim 27 (depends on 26)

The magnetic tunneling junction device of claim 26, wherein a number of the at least two extrinsic perpendicular magnetization structures in the first structure is greater than a number of the at least two extrinsic perpendicular magnetization structures in the second structure.

### Claim 28 (depends on 3)

An electronic device, comprising:
a bus;
a wireless interface configured to transmit data to or receive data from a wireless communication network connected to the bus;
an I/O device connected to the bus;
a controller connected to the bus; and
a memory including a semiconductor device including the magnetic tunneling junction device of claim 3, connected to the bus, configured to store a command code to be used by the controller or user data.

### Claim 29 (depends on 3)

A memory system, comprising:
a memory device including a semiconductor device including the magnetic tunneling junction device of claim 3, for storing data; and
a memory controller configured to control the memory device to read data stored in the memory device or to write data into the memory device in response to a read/write request of a host.