# US 8,772,845 B2 · Technique for smoothing an interface between layers of a semiconductor device

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- Number: US 8,772,845 B2
- Document ID: US8772845B2
- Status: Granted
- Kind: B2
- Application number: 13/240,714
- Filed: 2011-09-22
- Published: 2013-03-28
- Granted: 2014-07-08
- Earliest claimed: 2011-09-22
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Chih-Ming Chen; Cheng-Yuan Tsai; Chung-Yi Yu; Kai-Wen Cheng; Kuo-Ming Wu
- Inventors: Chih-Ming Chen; Cheng-Yuan Tsai; Chung-Yi Yu; Kai-Wen Cheng; Kuo-Ming Wu
- Web page: https://patentgrep.com/patent/US8772845B2

## CPC

- H10B 61/22: {of the field-effect transistor [FET] type}
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

The present disclosure provides a semiconductor memory device. The device includes a pinning layer having an anti-ferromagnetic material and disposed over a first electrode; a pinned layer disposed over the pinning layer; a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly distributed in a non-magnetic material; a barrier layer disposed on the composite layer; a free layer disposed over the barrier layer; and a second electrode disposed over the free layer.

## Claims

### Claim 1

A semiconductor memory device, comprising:
a pinning layer having an anti-ferromagnetic material and disposed over a first electrode;
a pinned layer disposed over the pinning layer;
a composite layer disposed over the pinned layer, wherein a portion of the pinned layer is embedded within the composite layer such that the composite layer has a magnetic material randomly distributed in a non-magnetic material;
a barrier layer disposed on the composite layer;
a free layer disposed over the barrier layer; and
a second electrode disposed over the free layer.

### Claim 2 (depends on 1)

The device of claim 1, wherein the magnetic material of the composite layer includes a ferromagnetic material.

### Claim 3 (depends on 2)

The device of claim 2, wherein:
the magnetic material of the composite layer includes cobalt and iron; and
the non-magnetic material of the composite layer includes one of magnesium and aluminum.

### Claim 4 (depends on 2)

The device of claim 2, wherein the barrier layer includes one of magnesium and aluminum.

### Claim 5 (depends on 2)

The device of claim 2, wherein the pinned layer includes a ferromagnetic layer containing cobalt and iron.

### Claim 6 (depends on 1)

The device of claim 1, wherein the pinned layer includes:
a first ferromagnetic layer;
a spacer layer disposed on the first ferromagnetic layer; and
a second ferromagnetic layer disposed on the spacer layer.

### Claim 7 (depends on 6)

The device of claim 6, wherein the spacer layer includes a material selected from the group consisting of ruthenium (Ru), titanium (Ti), tantalum (Ta), copper (Cu), and silver (Ag).

### Claim 8 (depends on 6)

The device of claim 6, wherein each of the first and second ferromagnetic layers includes:
a cobalt-iron-boron (CoFeB) film; and
a cobalt-iron (CoFe) film on the CoFeB film.

### Claim 9 (depends on 1)

The device of claim 1, wherein:
the first and second electrodes each include tantalum (Ta);
the barrier layer includes magnesium oxide (MgO); and
the anti-ferromagnetic material of the pinning layer includes platinum manganese (PtMn).

### Claim 10

A semiconductor memory device, comprising:
an anti-ferromagnetic layer disposed over a semiconductor substrate;
a pinned layer having a multiple of films disposed over the anti-ferromagnetic layer;
a composite layer disposed over the pinned layer, the composite layer having a magnetic material randomly dispersed in a non-magnetic material;
a barrier layer disposed on the composite layer, wherein a portion of the barrier layer physically contacts a portion of the pinned layer; and
a free layer disposed over the barrier layer.

### Claim 11 (depends on 10)

The device of claim 10, wherein:
the magnetic material of the composite layer includes cobalt and iron; and
the non-magnetic material of the composite layer includes magnesium.

### Claim 12 (depends on 10)

The device of claim 10, wherein the non-magnetic material of the composite layer includes magnesium and magnesium oxide.

### Claim 13 (depends on 10)

The device of claim 10, wherein the pinned layer includes:
a first ferromagnetic layer;
a spacer layer disposed on the first ferromagnetic layer; and
a second ferromagnetic layer disposed on the first ferromagnetic layer.

### Claim 14 (depends on 13)

The device of claim 13, wherein the spacer layer includes a material selected from the group consisting of ruthenium (Ru), titanium (Ti), tantalum (Ta), copper (Cu), and silver (Ag).

### Claim 15 (depends on 13)

The device of claim 13, wherein each of the first and second ferromagnetic layers includes:
a cobalt-iron-boron (CoFeB) film; and
a cobalt-iron (CoFe) film.

### Claim 16 (depends on 10)

The device of claim 10, wherein the portion of the pinned layer includes the magnetic material.

### Claim 17

A device comprising:
a pinning layer having an anti-ferromagnetic material and disposed over a semiconductor substrate;
a pinned layer disposed over the pinning layer;
a composite layer disposed over the pinned layer, wherein a portion of the pinned layer is embedded within the composite layer such that the composite layer has a magnetic material randomly distributed in a non-magnetic material;
a barrier layer disposed on the composite layer; and
a free layer disposed over the barrier layer.

### Claim 18 (depends on 16)

The device of claim 16, further comprising an electrode physically contacting the free layer.

### Claim 19 (depends on 16)

The device of claim 16, wherein a portion of the barrier layer physically contacts the portion of the pinned layer.

### Claim 20 (depends on 16)

The device of claim 16, wherein the composite layer has a top surface facing the barrier layer, wherein the top surface is formed of the portion of the pinned layer.

### Claim 21 (depends on 16)

The device of claim 16, wherein the pinned layer includes:
a first ferromagnetic layer;
a spacer layer disposed on the first ferromagnetic layer; and
a second ferromagnetic layer disposed on the spacer layer.

### Claim 22 (depends on 21)

The device of claim 21, wherein the second ferromagnetic layer is embedded within the composite layer.

### Claim 23 (depends on 16)

The device of claim 16, wherein the magnetic material of the composite layer includes a ferromagnetic material.

### Claim 24 (depends on 16)

The device of claim 16, wherein the magnetic material of the composite layer includes cobalt and iron, and
wherein the non-magnetic material of the composite layer includes one of magnesium and aluminum.

### Claim 25 (depends on 16)

The device of claim 16, wherein the barrier layer includes one of magnesium and aluminum.