# US 8,772,826 B2 · Photoelectric conversion device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,826 B2
- Document ID: US8772826B2
- Status: Granted
- Kind: B2
- Application number: 13/701,150
- Filed: 2011-05-30
- Published: 2013-03-21
- Granted: 2014-07-08
- Earliest claimed: 2010-05-31
- Assignees: KYOCERA Corporation
- Applicants: Hideaki Asao; Rui Kamada; Shuichi Kasai; Seiji Oguri; Isamu Tanaka; Nobuyuki Horiuchi; Kazumasa Umesato
- Inventors: Hideaki Asao; Rui Kamada; Shuichi Kasai; Seiji Oguri; Isamu Tanaka; Nobuyuki Horiuchi; Kazumasa Umesato
- Web page: https://patentgrep.com/patent/US8772826B2

## CPC

- H10F 77/121: comprising only selenium or only tellurium
- H10F 19/31: having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F 19/35: Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- Y02E 10/541: CuInSe2 material PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

## Claims

### Claim 1

A photoelectric conversion device, comprising
an electrode layer, and
a light absorbing layer located on the electrode layer,
the light absorbing layer comprises a plurality of stacked semiconductor layers containing a chalcopyrite-based Group I-III-VI compound semiconductor,
the plurality of semiconductor layers contain oxygen, and a molar concentration of the oxygen in surfaces and their vicinities of the plurality of semiconductor layers where the plurality of semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the plurality of semiconductor layers.

### Claim 2 (depends on 1)

The photoelectric conversion device according to claim 1, wherein the plurality of semiconductor layers contain selenium, and a molar concentration of the selenium in surfaces and their vicinities of the plurality of semiconductor layers where the plurality of semiconductor layers are stacked on each other is lower than average molar concentrations of the selenium in the plurality of semiconductor layers.

### Claim 3 (depends on 1)

The photoelectric conversion device according to claim 1, wherein in the light absorbing layer, an average molar concentration of the oxygen is higher in the semiconductor layer which exists in a region close to the electrode layer with respect to a central part of a stacking direction than in the semiconductor layer which exists in a region on a side opposite the electrode layer with respect to the central part.

### Claim 4 (depends on 1)

The photoelectric conversion device according to claim 1, wherein the plurality of semiconductor layers contain gallium, and a molar concentration of the gallium in surfaces and their vicinities of the plurality of semiconductor layers where the plurality of semiconductor layers are stacked on each other is higher than average molar concentrations of the gallium in the plurality of semiconductor layers.

### Claim 5 (depends on 4)

The photoelectric conversion device according to claim 4, wherein in the light absorbing layer, an average molar concentration of the gallium is higher in the semiconductor layer which exists in a region close to the electrode layer than in the semiconductor layer at a central part of a stacking direction.

### Claim 6 (depends on 4)

The photoelectric conversion device according to claim 4, wherein in the light absorbing layer, an average molar concentration of the gallium is higher in the semiconductor layer which exists in a region on a side opposite the electrode layer than in the semiconductor layer at a central part of a stacking direction.