# US 8,772,821 B2 · Optoelectronic semiconductor part containing alkali-free and halogen-free metal phosphate

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- Number: US 8,772,821 B2
- Document ID: US8772821B2
- Status: Granted
- Kind: B2
- Application number: 13/696,744
- Filed: 2011-04-20
- Published: 2013-03-07
- Granted: 2014-07-08
- Earliest claimed: 2010-05-07
- Assignees: OSRAM GmbH
- Applicants: Angela Eberhardt; Christina Wille; Joachim Wirth-Schön
- Inventors: Angela Eberhardt; Christina Wille; Joachim Wirth-Schön
- Web page: https://patentgrep.com/patent/US8772821B2

## CPC

- C03C 3/17: containing aluminium or beryllium
- C03C 27/00: Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing (C03C17/00 takes precedence; layered structures comprising at least one glass sheet B32B17/00; wired glass C03B; joining glass to ceramics C04)
- G02B 19/0028: {refractive and reflective surfaces, e.g. non-imaging catadioptric systems}
- G02B 19/0061: {the light source comprising a LED}
- G02B 19/0095: {for use with ultraviolet radiation}
- H10H 20/85: Packages
- G02B 27/0916: {Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers (coupling into light guides using intermediate optical elements G02B6/4204; details of lighting devices in general F21V)}
- H10H 20/8511: {characterised by their material, e.g. binder}
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate is substantially alkali-free and halogen-free.

## Claims

### Claim 1

An optoelectronic semiconductor part comprising a light source, a housing and electrical connections, wherein the optoelectronic semiconductor part comprises a component which contains metal phosphate, and wherein the metal phosphate contains no more than 1 mol-% of alkali oxides and halogen-containing components.

### Claim 2 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the metal phosphate contains phosphate as the main component.

### Claim 3 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the metal phosphate contains in the range of 5mol-% to 75mol-% of P2O5 and, in particular in the range of 5 mol-% to 25 mol-% Al2O3or Y2O3.

### Claim 4 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein in the range of 0.5 mol-% to 10 mol-% of vanadium V, tellurium Te and/or bismuth Bi is added to the metal phosphate in each case.

### Claim 5 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein inorganic components which increase the refractive index and/or serve as fillers and/or act as optical filters and/or reflect and/or reduce reflection and/or absorb radiation are added to the metal phosphate.

### Claim 6 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the component which contains metal phosphate is an adhesive as a binding agent between two components of the semiconductor part.

### Claim 7 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the component which contains metal phosphate is a matrix for a conversion element.

### Claim 8 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the component which contains metal phosphate is a housing component or a lens.

### Claim 9 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the component which contains metal phosphate is a protective layer for luminophore particles.

### Claim 10 (depends on 1)

The optoelectronic semiconductor part as claimed in claim 1, wherein the component which contains metal phosphate is a coating or a matrix of a coating of the conversion element.