# US 8,772,815 B2 · Semiconductor light emitting device having a protecting member and method of fabricating the same

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- Number: US 8,772,815 B2
- Document ID: US8772815B2
- Status: Granted
- Kind: B2
- Application number: 12/445,182
- Filed: 2008-12-17
- Published: 2010-07-29
- Granted: 2014-07-08
- Earliest claimed: 2007-12-20
- Assignees: LG Innotek Co., Ltd.
- Applicants: Hwan Hee Jeong
- Inventors: Hwan Hee Jeong
- Web page: https://patentgrep.com/patent/US8772815B2

## CPC

- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/018: {Bonding of wafers}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.

## Claims

### Claim 1

A semiconductor light emitting device comprising:
a first conductive semiconductor layer;
an active layer on top and side surfaces of the first conductive semiconductor layer;
a second conductive semiconductor layer on top and side surfaces of the active layer;
a semiconductor layer having a nitride material on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer;
a conductive layer directly contacting the second conductive semiconductor layer and the semiconductor layer having the nitride material; and
a conductive substrate on the conductive layer,
wherein a portion of a bottom surface of the semiconductor layer is coplanar with a bottom surface of the first conductive semiconductor layer,
wherein the conductive layer is disposed between the semiconductor layer and the conductive substrate, and
wherein light from the active layer is emitted to the outside from a bottom surface of the first conductive semiconductor layer.

### Claim 2 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the conductive layer comprises at least one or mixture of indium tin oxide (ITO), Pt, Ni, Au, Rh, Pd, Ag, Al, and Ir.

### Claim 3 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the first conductive semiconductor layer is formed to a thickness of 4 um to 7 um, and the semiconductor layer is formed to a thickness of 2 um to 8 um.