# US 8,772,811 B2 · Light emitting diode

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- Number: US 8,772,811 B2
- Document ID: US8772811B2
- Status: Granted
- Kind: B2
- Application number: 13/781,765
- Filed: 2013-03-01
- Published: 2013-07-11
- Granted: 2014-07-08
- Earliest claimed: 2011-04-26
- Assignees: Advanced Optoelectronic Technology, Inc.
- Applicants: Advanced Optoelectronic Technology, Inc.
- Inventors: Tzu-Chien Hung; Shun-Kuei Yang; Chia-Hui Shen
- Web page: https://patentgrep.com/patent/US8772811B2

## CPC

- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity.

## Claims

### Claim 1

An LED comprising:
a substrate;
a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity.

### Claim 2 (depends on 1)

The LED in claim 1, wherein the roughened exposed portion is annular and surrounds the bottom surface of the second n-type GaN layer.

### Claim 3 (depends on 1)

The LED in claim 1, wherein the substrate is made of a material selected from a group consisting of sapphire, silicone, and SiC.

### Claim 4 (depends on 1)

The LED in claim 1, wherein a thickness of the second n-type GaN layer ranges from 300 nm to 500 nm.

### Claim 5 (depends on 1)

The LED in claim 1, further comprising an electrode formed on the p-type GaN layer, the electrode is made of a material selected from a group consisting of Au, Ag, Cu, Al, Sn, Ni, Co, and alloys thereof.

### Claim 6 (depends on 1)

The LED in claim 1, further comprising a buffer layer; and an undoped GaN layer, the buffer layer is formed between the substrate and the first n-type GaN layer, and the undoped GaN layer is formed between the buffer layer and the first n-type GaN layer.