# US 8,772,809 B2 · Semiconductor light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,809 B2 - Document ID: US8772809B2 - Status: Granted - Kind: B2 - Application number: 13/599,853 - Filed: 2012-08-30 - Published: 2013-08-29 - Granted: 2014-07-08 - Earliest claimed: 2012-02-07 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Katsuyoshi Furuki; Hironori Yamasaki; Yukie Nishikawa - Inventors: Katsuyoshi Furuki; Hironori Yamasaki; Yukie Nishikawa - Web page: https://patentgrep.com/patent/US8772809B2 ## CPC - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/835: {Reflective materials} - H10H 20/831: characterised by their shape - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/833: Transparent materials - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first electrode, a first conductivity type layer, a second conductivity type layer, and a second electrode. The first electrode includes a reflection metal layer. The first conductivity type layer is provided between the light emitting layer and the first electrode. The second conductivity type layer has a first surface on the light emitting layer side and a second surface on an opposite side of the first surface. The second electrode is provided on the second surface of the second conductivity type layer. A plurarity of interfaces, provided between the first conductivity type layer and the reflection metal layer, has at least first concave-convex structures. A region of the second surface of the second conductivity type layer, where the second electrode is not provided, has second concave-convex structures. ## Claims ### Claim 1 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer; a first conductivity type layer between the light emitting layer and the first electrode; a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface; a second electrode on the second surface of the second conductivity type layer; a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer; and an insulating layer between the first conductivity type layer and the first electrode, the insulating layer having openings through which the first conductivity type layer and the first electrode are in contact. ### Claim 2 (depends on 1) The device according to claim 1, wherein first concave-convex structures are on at least part of an interface of the first conductivity type layer and the insulating layer. ### Claim 3 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer; a first conductivity type layer between the light emitting layer and the first electrode: a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface; a second electrode on the second surface of the second conductivity type layer; a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer; and a support substrate on which the first electrode is disposed, the first electrode further including a bonding metal layer between the support substrate and the reflection metal layer, the bonding metal layer having a light reflectance that is less than a light reflectance of the reflection metal layer. ### Claim 4 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer and a transparent conductive layer; a first conductivity type layer between the light emitting layer and the transparent conductive layer of the first electrode; a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface; a second electrode provided on the second surface of the second conductivity type layer; and a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer, the first concave-convex structures on at least part of an interface of the first conductive type layer and the transparent conductive layer. ### Claim 5 (depends on 4) The device according to claim 4, wherein third concave-convex structures are on at least part of an interface of the transparent conductive layer and the reflection metal layer. ### Claim 6 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer and a transparent conductive layer; a first conductivity type layer provided between the light emitting layer and the transparent conductive layer of the first electrode; a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite side first surface; a second electrode provided on the second surface of the second conductivity type layer; a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer; and a support substrate on which the first electrode is disposed, the first electrode further including a bonding metal layer between the support substrate and the reflection metal layer, the bonding metal layer having a light reflectance that is less than a light reflectance of the reflection metal layer, and the light emitting layer, the first conductivity type layer, and the second conductivity type layer including one of Inx(AlyGa1-y)1-xP(0≦x≦1, 0≦y≦1),AlxGa1-xAs(0≦x≦1), and InxAlyGa1-x-yN(0≦x≦1, 0≦y≦1, x+y≦1). ### Claim 7 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer and a transparent conductive layer; a first conductivity type layer between the light emitting layer and the transparent conductive layer; a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface; a second electrode on the second surface of the second conductivity type layer; an insulating layer between the first conductivity type layer and the first electrode and having openings; and a plurality of first concave-convex structures on at least a portion of a surface of first conductivity type layer that is between the first conductivity type layer and the reflection metal layer. ### Claim 8 (depends on 7) The device according to claim 7, wherein first concave-convex structures are on at least part of an interface of the first conductivity type layer and the insulating layer. ### Claim 9 (depends on 8) The device according to claim 8, wherein third concave-convex structures are on at least part of an interface between the transparent conductive layer and the reflection metal layer. ### Claim 10 (depends on 7) The device according to claim 7, wherein first concave-convex structures are on at least part of an interface between the transparent conductive layer and the reflection metal layer. ### Claim 11 (depends on 7) The device according to claim 7, further comprising: a plurality of second concave-convex structures on the second surface of the second conductivity type layer, the second concave-convex structures only on portions of the second surface which do not overlap with the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed. ### Claim 12 (depends on 11) The device according to claim 11, wherein one base angle of the second concave-convex structures is 90 degrees or more. ### Claim 13 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer; a first conductivity type layer between the light emitting layer and the first electrode: a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface; a second electrode on the second surface of the second conductivity type layer; and a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer, the surface of the first conductivity type layer comprising a first region having first concave-convex structures and a second region not having first concave-convex structures, the first region including all portions of the surface of the first conductivity type layer which overlap the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed, and the second region including only portions of the surface of the first conductivity type layer which do not overlap with second electrode when viewed from the direction orthogonal to the plane in which the second electrode is disposed. ### Claim 14 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer; a first conductivity type layer between the light emitting layer and the first electrode: a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface; a second electrode on the second surface of the second conductivity type layer; a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer; and a plurality of second concave-convex structures on the second surface of the second conductivity type layer, the second concave-convex structures only on portions of the second surface which do not overlap with the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed. ### Claim 15 (depends on 14) The device according to claim 14, wherein one base angle of the second concave-convex structures is 90 degrees or more. ### Claim 16 A semiconductor light emitting device comprising: a light emitting layer; a first electrode including a reflection metal layer and a transparent conductive layer; a first conductivity type layer provided between the light emitting layer and the transparent conductive layer of the first electrode; a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite side first surface; a second electrode provided on the second surface of the second conductivity type layer; a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer; and a plurality of second concave-convex structures on the second surface of the second conductivity type layer, the second concave-convex structures only on portions of the second surface which do not overlap with the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed. ### Claim 17 (depends on 16) The device according to claim 16, wherein one base angle of the second concave-convex structures is 90 degrees or more.