# US 8,772,808 B2 · Semiconductor light emitting element and manufacturing method thereof

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 8,772,808 B2
- Document ID: US8772808B2
- Status: Granted
- Kind: B2
- Application number: 13/426,141
- Filed: 2012-03-21
- Published: 2012-09-27
- Granted: 2014-07-08
- Earliest claimed: 2011-03-22
- Assignees: Stanley Electric Co., Ltd.
- Applicants: Yasuyuki Shibata; Ji-Hao Liang; Jiro Higashino
- Inventors: Yasuyuki Shibata; Ji-Hao Liang; Jiro Higashino
- Web page: https://patentgrep.com/patent/US8772808B2

## CPC

- H10H 20/01: Manufacture or treatment
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/018: {Bonding of wafers}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

## Claims

### Claim 1

A semiconductor light emitting element, comprising:
a semiconductor laminated body including an active layer;
an electrode formed on said semiconductor laminated body to supply a current to said active layer, the electrode comprising a metal film;
a cap layer formed over said semiconductor laminated body and said electrode, wherein said cap layer comprises a multilayered film consisting of a plurality of individual metal layers;
a wave-like bend having a multilayer structure integrated with the multilayered film of said cap layer at an edge portion of said cap layer, wherein the multilayered structure is folded back on itself to form a folded protrusion, and wherein the folded protrusion surrounds an edge of the metal film of said electrode and contacts the semiconductor laminated body;
a bonding layer formed over said cap layer and the multilayered structure; and
a support substrate to support said semiconductor laminated body via said bonding layer.