# US 8,772,806 B2 · Light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,806 B2 - Document ID: US8772806B2 - Status: Granted - Kind: B2 - Application number: 13/039,464 - Filed: 2011-03-03 - Published: 2011-09-08 - Granted: 2014-07-08 - Earliest claimed: 2010-03-08 - Assignees: LG Innotek Co., Ltd. - Applicants: Sung Min Hwang; Kyoung Woo Jo - Inventors: Sung Min Hwang; Kyoung Woo Jo - Web page: https://patentgrep.com/patent/US8772806B2 ## CPC - H10H 20/835: {Reflective materials} - H10H 20/8312: {extending at least partially through the bodies} - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/018: {Bonding of wafers} - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting device of the embodiment includes a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; and a first insulating layer between the first electrode and the light emitting structure. ## Claims ### Claim 1 A light emitting device comprising: a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; a first insulating layer between the first electrode and the light emitting structure; a first reflective layer between the first electrode and the second semiconductor layer; a second reflective layer between the first semiconductor layer and the second electrode, a part of the second reflective layer extending between the first electrode and the first insulating layer; and a second insulating layer between the first electrode and the second reflective layer, wherein a bottom surface of the first electrode is coplanar with a bottom surface of the second electrode. ### Claim 2 (depends on 1) The light emitting device of claim 1, wherein the first semiconductor layer is a p type semiconductor layer and the second semiconductor layer is an n type semiconductor layer. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein a bottom surface of the first electrode has the same height as that of a bottom surface of the second electrode. ### Claim 4 (depends on 1) The light emitting device of claim 1, wherein the first insulating layer is disposed on an inner wall of the first cavity to insulate the first electrode from the first semiconductor layer and the active layer. ### Claim 5 (depends on 1) The light emitting device of claim 1, wherein the second insulating layer is disposed on a bottom surface of the second reflective layer between the first and second electrodes. ### Claim 6 (depends on 1) The light emitting device of claim 1, wherein the second insulating layer is connected to the first insulating layer in the first cavity with second reflective layer therebetween. ### Claim 7 (depends on 1) The light emitting device of claim 1, wherein the first insulating layer includes a dielectric material to form capacitance. ### Claim 8 (depends on 1) The light emitting device of claim 1, wherein a top surface of the first insulating layer is substantially higher than a top surface of the first electrode. ### Claim 9 (depends on 1) The light emitting device of claim 1, wherein a top surface of the first insulating layer is substantially flush with a top surface of the first reflective layer. ### Claim 10 (depends on 1) The light emitting device of claim 1, wherein a lateral width of the first reflective layer is substantially same with a lateral width of the first electrode. ### Claim 11 (depends on 1) The light emitting device of claim 1, wherein a top surface of the second insulating layer is substantially flush with a top surface of the part of the second reflective layer. ### Claim 12 (depends on 1) The light emitting device of claim 1, wherein a lateral width of the second reflective layer is wider than a lateral width of the second electrode. ### Claim 13 A light emitting device comprising: a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first cavity passing through the first semiconductor layer and the active layer to expose the second semiconductor layer; a first electrode extending to the outside of the first cavity from the second semiconductor layer in the first cavity; a second electrode disposed on an outer peripheral region of a bottom surface of the first semiconductor layer and spaced apart from the first electrode while surrounding a lateral side of the first electrode; a first insulating layer between the first electrode and the light emitting structure; a first reflective layer between the first electrode and the second semiconductor layer; a second reflective layer between the first semiconductor layer and the second electrode, a portion of the second reflective layer extending between the first electrode and the first insulating layer; and a second insulating layer between the first electrode and the second reflective layer, wherein the second reflective layer comprises a lateral portion and a vertical portion that extends from the lateral portion. ### Claim 14 (depends on 13) The light emitting device of claim 13, wherein the vertical portion of the second reflective layer is provided through the active layer and the second semiconductor layer. ### Claim 15 (depends on 13) The light emitting device of claim 13, wherein a top portion of the vertical portion is disposed higher than a bottom portion of the second semiconductor layer. ### Claim 16 (depends on 13) The light emitting device of claim 13, wherein the second insulating layer is disposed on a bottom surface of the second reflective layer. ### Claim 17 (depends on 13) The light emitting device of claim 13, wherein the second insulating layer is connected to the first insulating layer. ### Claim 18 (depends on 13) The light emitting device of claim 13, wherein a top surface of the first insulating layer is substantially flush with a top surface of the first reflective layer. ### Claim 19 (depends on 13) The light emitting device of claim 13, wherein a top surface of the second insulating layer is substantially flush with a top surface of the part of the second reflective layer. ### Claim 20 (depends on 13) The light emitting device of claim 13, wherein a lateral width of the second reflective layer is wider than a lateral width of the second electrode.