# US 8,772,804 B2 · Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 8,772,804 B2 - Document ID: US8772804B2 - Status: Granted - Kind: B2 - Application number: 12/920,311 - Filed: 2009-02-11 - Published: 2011-08-18 - Granted: 2014-07-08 - Earliest claimed: 2008-02-29 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: Magnus Ahlstedt; Johannes Baur; Ulrich Zehnder; Martin Strassburg; Matthias Sabathil; Berthold Hahn - Inventors: Magnus Ahlstedt; Johannes Baur; Ulrich Zehnder; Martin Strassburg; Matthias Sabathil; Berthold Hahn - Web page: https://patentgrep.com/patent/US8772804B2 ## CPC - H10H 20/835: {Reflective materials} - H10H 20/833: Transparent materials - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8). ## Claims ### Claim 1 A semiconductor light-emitting diode comprising: at least one p-doped light-emitting diode layer, an n-doped light-emitting diode layer and an optically active zone between the p-doped light-emitting diode layer and the n-doped light-emitting diode layer; an oxide layer of a transparent conductive oxide; and at least one mirror layer comprising reflective material including at least one dielectric mirror layer; wherein the oxide layer is disposed between the light-emitting diode layers and the at least one mirror layer, and comprises a first boundary surface facing the light-emitting diode layers and a second boundary surface directly adjoining at least a portion of the reflective material of the at least one mirror layer, and wherein the second boundary surface of the oxide layer has less roughness than the first boundary surface of the oxide layer. ### Claim 2 A semiconductor light-emitting diode comprising: at least one p-doped light-emitting diode layer, an n-doped light-emitting diode layer and an optically active zone between the p-doped light-emitting diode layer and the n-doped light-emitting diode layer; an oxide layer of a transparent conductive oxide; and at least one mirror layer comprising reflective material including at least one dielectric mirror layer; wherein the oxide layer is disposed between the light-emitting diode layers and the at least one mirror layer, and comprises a first boundary surface facing the light-emitting diode layers and a second boundary surface directly adjoining at least a portion of the reflective material of the at least one mirror layer, and wherein the second boundary surface of the oxide layer has a roughness which is less than 1.0 nm. ### Claim 3 (depends on 1, 2) The semiconductor light-emitting diode according to claim 1 or 2, wherein the oxide layer has a layer thickness greater than 5 nm. ### Claim 4 (depends on 1, 2) The semiconductor light-emitting diode according to claim 1 or 2, wherein the p-doped light-emitting diode layer is disposed closer to the oxide layer than the n-doped light-emitting diode layer. ### Claim 5 (depends on 1, 2) The semiconductor light-emitting diode according to claim 1 or 2, wherein disposed between the p-doped light-emitting diode layer and the oxide layer is a p-doped semiconductor layer which has a dopant concentration which is at least as large as the dopant concentration of the p-doped light-emitting diode layer. ### Claim 6 (depends on 5) The semiconductor light-emitting diode according to claim 5, wherein the first boundary surface of the oxide layer adjoins the p-doped semiconductor layer. ### Claim 7 (depends on 5) The semiconductor light-emitting diode according to claim 5, wherein an n-doped semiconductor layer is disposed between the p-doped semiconductor layer and the oxide layer, and in that the first boundary surface of the oxide layer adjoins the n-doped semiconductor layer. ### Claim 8 (depends on 7) The semiconductor light-emitting diode according to claim 7, wherein a non-doped semiconductor layer is disposed between the p-doped semiconductor layer and the n-doped semiconductor layer. ### Claim 9 (depends on 1, 2) The semiconductor light-emitting diode according to claim 1 or 2, wherein the transparent conductive oxide of the oxide layer contains at least one of the materials zinc oxide, indium tin oxide and indium zinc oxide. ### Claim 10 (depends on 1, 2) The semiconductor light-emitting diode according to claim 1 or 2, wherein the reflective material comprises at least one metallic mirror layer. ### Claim 11 (depends on 10) The semiconductor light-emitting diode according to claim 10, wherein the dielectric mirror layer is disposed between the oxide layer and the metallic mirror layer and comprises local recesses in which the metallic mirror layer extends as far as to the second boundary surface of the oxide layer. ### Claim 12 A method for producing a semiconductor light-emitting diode, wherein the method comprises the steps of: forming at least one p-doped light-emitting diode layer and an n-doped light-emitting diode layer; depositing a transparent conductive oxide, wherein an oxide layer is formed which comprises a first boundary surface facing the light-emitting diode layers, wherein the oxide layer is deposited by means of HF-assisted DC sputtering and in doing so producing a second boundary surface of the oxide layer opposing the first boundary surface having less roughness than the first boundary surface of the oxide layer; and forming at least one mirror layer including at least one dielectric mirror layer on the second boundary surface of the oxide layer. ### Claim 13 (depends on 12) The method according to claim 12, wherein forming the at least one mirror layer includes depositing the at least one dielectric mirror layer on the second boundary surface, etching recesses into the at least one dielectric mirror layer and depositing at least one metallic mirror layer onto the at least one dielectric mirror layer. ### Claim 14 (depends on 11) The semiconductor light-emitting diode according to claim 11, wherein the secondary boundary surface directly adjoins at least a portion of the dielectric mirror layer and a portion of the metallic layer in the local recesses of the dielectric mirror layer. ### Claim 15 (depends on 1, 2) The semiconductor light-emitting diode according to claim 1 or 2, wherein the secondary boundary surface directly adjoins at least a portion of the dielectric mirror layer.